FDD6N25TM

Mfr. #:: FDD6N25TM
製造商:: ON Semiconductor / Fairchild
描述:: MOSFET 250V N-CH MOSFET
生命週期:: 製造商新產品
數據表:: FDD6N25TM 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: TO-252-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 250 V

Id - 連續漏極電流：: 4.4 A

Rds On - 漏源電阻：: 900 mOhms

Vgs - 柵源電壓：: 30 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 50 W

配置：: 單身的

頻道模式：: 增強

打包：: 捲軸

高度：: 2.39 mm

長度：: 6.73 mm

系列：: FDD6N25

晶體管類型：: 1 N-Channel

寬度：: 6.22 mm

品牌：: 安森美半導體/飛兆半導體

正向跨導 - 最小值：: 5.5 S

秋季時間：: 12 ns

產品類別：: MOSFET

上升時間：: 25 ns

出廠包裝數量：: 2500

子類別：: MOSFET

典型關斷延遲時間：: 7 ns

典型的開啟延遲時間：: 10 ns

單位重量：: 0.009184 oz

Tags: FDD6N25TM, FDD6N25T, FDD6N25, FDD6N2, FDD6N, FDD6, FDD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDD6N25TM 描述

***emi: N-Channel Power MOSFET, UniFETTM, 250 V, 4.4 A, 1.1 Ω, DPAK

***ure Electronics: N-Channel 250 V 1.1 Ohm Surface Mount UniFET Mosfet DPAK

***ment14 APAC: MOSFET, N-CH, 250V, 4.4A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Source Voltage Vds:250V; On Resistance

***roFlash: Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N TO-252 SMD; Transistor Polarity:N; Current, Id Cont:4.4A; Resistance, Rds On:1.1ohm; Case Style:DPAK; Termination Type:SMD; Current, Idm Pulse:18A; No. of Pins:2; Power Dissipation:50mW; Voltage, Vds Max:250V

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***emi: N-Channel Power MOSFET, UniFETTM, 200V, 4.5A, 800mΩ, DPAK

***ure Electronics: N-Channel 200 V 0.8 Ohm Surface Mount UniFET Mosfet DPAK

***nell: MOSFET, N CH, 200V, 4.5A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.6ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:40W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***emi: N-Channel Power MOSFET, UniFETTM, 200 V, 5 A, 690 mΩ, DPAK

***ure Electronics: N-Channel 200 V 0.69 Ohm Surface Mount UniFET Mosfet TO-252-3

***ment14 APAC: MOSFET, N-CH, 200V, 5A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Source Voltage Vds:200V; On Resistance

***r Electronics: Power Field-Effect Transistor, 5A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***el Electronic: PMIC - AC DC Converters, Offline Switchers 4 (72 Hours) 8-SMD (7 Leads), Gull Wing Tape & Reel (TR) Buck, Buck-Boost, Flyback Surface Mount -40°C~150°C TJ Yes Non-Isolated Current Limiting, Open Loop, Over Load, Over Temperature, Over VolConv AC-DC Single Buck/Buck-Boost/Flyback 85VAC to 265VAC 7-Pin SMD-8C T/R

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***emi: N-Channel Power MOSFET, QFET®, 250 V, 4.4 A, 1 Ω, DPAK

***r Electronics: Power Field-Effect Transistor, 4.4A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***th Star Micro: Transistor MOSFET N-CH 200V 4.8A 3-Pin (2+Tab) DPAK

***ure Electronics: Single N-Channel 200 V 0.8 Ohms Surface Mount Power Mosfet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:4.8A; On Resistance, Rds(on):800mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, 200V, 4.8A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):800mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.8A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:19A; SMD Marking:IRFR220; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 200 V 0.8 Ohms Surface Mount Power Mosfet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: Channel Type:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.8A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:42W; No. Of Pins:3Pins Rohs Compliant: No

***ure Electronics: Single N-Channel 200 V 0.8 Ohms Surface Mount Power Mosfet - TO-252

***ical: Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab) DPAK T/R

***ark: Mosfet N-Channel 200V Rohs Compliant: No

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Market price

型號	製造商	描述	庫存	價格
FDD6N25TM DISTI # V36:1790_06300642	ON Semiconductor	Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R	22500	2500:$0.2021
FDD6N25TM DISTI # V72:2272_06300642	ON Semiconductor	Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R	1000	1000:$0.2404 500:$0.3009 250:$0.3011 100:$0.3012 25:$0.4580 10:$0.4583 1:$0.5500
FDD6N25TM DISTI # FDD6N25TMCT-ND	ON Semiconductor	MOSFET N-CH 250V 4.4A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	12904In Stock	1000:$0.2934 500:$0.3632 100:$0.4854 10:$0.6250 1:$0.7100
FDD6N25TM DISTI # FDD6N25TMDKR-ND	ON Semiconductor	MOSFET N-CH 250V 4.4A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	12904In Stock	1000:$0.2934 500:$0.3632 100:$0.4854 10:$0.6250 1:$0.7100
FDD6N25TM DISTI # FDD6N25TMTR-ND	ON Semiconductor	MOSFET N-CH 250V 4.4A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	10000In Stock	25000:$0.2295 12500:$0.2341 5000:$0.2425 2500:$0.2595
FDD6N25TM DISTI # 31939067	ON Semiconductor	Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R	22500	2500:$0.2173
FDD6N25TM DISTI # 32456512	ON Semiconductor	Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R	17500	5000:$0.1708 2500:$0.1709
FDD6N25TM DISTI # 32638001	ON Semiconductor	Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R	5000	10000:$0.1692 5000:$0.1717 2500:$0.1727
FDD6N25TM DISTI # 31440481	ON Semiconductor	Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R	1000	1000:$0.2584 500:$0.3235 250:$0.3237 100:$0.3238 38:$0.4924
FDD6N25TM DISTI # FDD6N25TM	ON Semiconductor	Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R (Alt: FDD6N25TM) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.2629 5000:€0.2149 10000:€0.1969 15000:€0.1819 25000:€0.1689
FDD6N25TM DISTI # FDD6N25TM	ON Semiconductor	Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R (Alt: FDD6N25TM) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$0.2678 5000:$0.2575 7500:$0.2480 12500:$0.2391 25000:$0.2309 62500:$0.2232 125000:$0.2195
FDD6N25TM DISTI # FDD6N25TM	ON Semiconductor	Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD6N25TM) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2362 5000:$0.2347 10000:$0.2317 15000:$0.2287 25000:$0.2231
FDD6N25TM DISTI # FDD6N25TM	ON Semiconductor	Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: FDD6N25TM) Min Qty: 1087 Container: Bulk	Americas - 0	1137:$0.2999 1139:$0.2979 2276:$0.2939 5685:$0.2909 11370:$0.2829
FDD6N25TM DISTI # 52M3160	ON Semiconductor	MOSFET Transistor, N Channel, 4.4 A, 250 V, 0.9 ohm, 10 V, 5 V	0	25000:$0.2050 15000:$0.2080 10000:$0.2110 5000:$0.2150 2500:$0.2190 1:$0.2200
FDD6N25TM DISTI # 31Y1358	ON Semiconductor	MOSFET, N-CH, 250V, 4.4A, TO-252AA-3,Transistor Polarity:N Channel,Continuous Drain Current Id:4.4A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.9ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V RoHS Compliant: Yes	2285	1000:$0.2670 500:$0.2870 250:$0.3090 100:$0.3290 50:$0.3870 25:$0.4440 10:$0.5020 1:$0.6050
FDD6N25TM DISTI # 512-FDD6N25TM	ON Semiconductor	MOSFET 250V N-CH MOSFET RoHS: Compliant	34848	1:$0.5800 10:$0.4780 100:$0.3080 1000:$0.2470
FDD6N25TM	ON Semiconductor	Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	746	1000:$0.3000 500:$0.3200 100:$0.3300 25:$0.3500 1:$0.3700
FDD6N25TM	Fairchild Semiconductor Corporation	4.4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	201	57:$0.2400 11:$0.3600 1:$0.4800
FDD6N25TM DISTI # 8090922	ON Semiconductor	MOSFETFAIRCHILDFDD6N25TM, PK	340	250:£0.1500 10:£0.1540
FDD6N25TM DISTI # 8090922P	ON Semiconductor	MOSFETFAIRCHILDFDD6N25TM, RL	1620	250:£0.1500
FDD6N25TM	Fairchild Semiconductor Corporation		836
FDD6N25TM DISTI # FDD6N25TM	ON Semiconductor	Transistor: N-MOSFET,unipolar,250V,2.6A,0.05W,TO252	2486	1:$0.4507 5:$0.3941 25:$0.3180 100:$0.2766 500:$0.2531
FDD6N25TM DISTI # 2453850	ON Semiconductor	MOSFET, N-CH, 250V, 4.4A, TO-252AA-3 RoHS: Compliant	2285	2500:$0.3650 1000:$0.3720 100:$0.4640 10:$0.7200 1:$0.8740
FDD6N25TM DISTI # 2453850RL	ON Semiconductor	MOSFET, N-CH, 250V, 4.4A, TO-252AA-3 RoHS: Compliant	0	2500:$0.3650 1000:$0.3720 100:$0.4640 10:$0.7200 1:$0.8740
FDD6N25TM DISTI # 2453850	ON Semiconductor	MOSFET, N-CH, 250V, 4.4A, TO-252AA-3 RoHS: Compliant	2380	500:£0.2090 250:£0.2240 100:£0.2400 25:£0.3930 5:£0.4200
FDD6N25TM DISTI # XSFP00000048082	Fairchild Semiconductor Corporation	RoHS: Compliant	5000 in Stock0 on Order	5000:$0.3327 2500:$0.3660

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