IPB80P04P4L-06

IPB80P04P4L-06
Mfr. #:
IPB80P04P4L-06
製造商:
Infineon Technologies
描述:
MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2
生命週期:
製造商新產品
數據表:
IPB80P04P4L-06 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
IPB80P04P4L-06 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
TO-263-3
通道數:
1 Channel
晶體管極性:
P-通道
Vds - 漏源擊穿電壓:
40 V
Id - 連續漏極電流:
80 A
Rds On - 漏源電阻:
5.5 mOhms
Vgs th - 柵源閾值電壓:
2.2 V
Vgs - 柵源電壓:
16 V
Qg - 門電荷:
104 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
Pd - 功耗:
88 W
配置:
單身的
頻道模式:
增強
資質:
AEC-Q101
商品名:
優化MOS
打包:
捲軸
高度:
4.4 mm
長度:
10 mm
系列:
OptiMOS-P2
晶體管類型:
1 P-Channel
寬度:
9.25 mm
品牌:
英飛凌科技
秋季時間:
44 ns
產品類別:
MOSFET
上升時間:
12 ns
出廠包裝數量:
1000
子類別:
MOSFET
典型關斷延遲時間:
61 ns
典型的開啟延遲時間:
17 ns
第 # 部分別名:
IPB80P04P4L06ATMA1 IPB8P4P4L6XT SP000842046
單位重量:
0.139332 oz
Tags
IPB80P04P4L-0, IPB80P04P4L, IPB80P04, IPB80P, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
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可用性
庫存:
884
訂購:
2867
輸入數量:
IPB80P04P4L-06的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$1.50
US$1.50
10
US$1.28
US$12.80
100
US$1.02
US$102.00
500
US$0.90
US$448.50
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