A3T21H400W23SR6

A3T21H400W23SR6
Mfr. #:
A3T21H400W23SR6
製造商:
NXP Semiconductors
描述:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 71 W Avg., 28 V
生命週期:
製造商新產品
數據表:
A3T21H400W23SR6 數據表
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ECAD Model:
更多信息:
A3T21H400W23SR6 更多信息 A3T21H400W23SR6 Product Details
產品屬性
屬性值
製造商:
恩智浦
產品分類:
射頻 MOSFET 晶體管
RoHS:
Y
晶體管極性:
雙 N 通道
技術:
Id - 連續漏極電流:
3.2 A
Vds - 漏源擊穿電壓:
- 500 mV, 65 V
最低工作溫度:
- 40 C
最高工作溫度:
+ 150 C
安裝方式:
貼片/貼片
包裝/案例:
ACP-1230S-4
打包:
捲軸
工作頻率:
2110 MHz to 2200 MHz
系列:
A3T21H400W23
類型:
射頻功率MOSFET
品牌:
恩智浦半導體
通道數:
2 Channel
產品類別:
射頻 MOSFET 晶體管
出廠包裝數量:
150
子類別:
MOSFET
Vgs - 柵源電壓:
- 6 V, 10 V
Vgs th - 柵源閾值電壓:
0.8 V, 1.4 V
第 # 部分別名:
935372908128
Tags
A3T21H4, A3T21, A3T2, A3T
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
圖片 型號 描述
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Mfr.#: A3T21H450W23SR6

OMO.#: OMO-A3T21H450W23SR6

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Mfr.#: A3T21H456W23SR6

OMO.#: OMO-A3T21H456W23SR6

RF MOSFET Transistors RF PWR LDMOS TRNSTR 2110-2200 MHz 87W30V
A3T21H400W23SR6

Mfr.#: A3T21H400W23SR6

OMO.#: OMO-A3T21H400W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 71 W Avg., 28 V
A3T21H455W23SR6

Mfr.#: A3T21H455W23SR6

OMO.#: OMO-A3T21H455W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 87 W Avg., 30 V
A3T21H450W23SR6

Mfr.#: A3T21H450W23SR6

OMO.#: OMO-A3T21H450W23SR6-NXP-SEMICONDUCTORS

AIRFAST RF POWER LDMOS TRANSISTO
A3T21H455W23SR6

Mfr.#: A3T21H455W23SR6

OMO.#: OMO-A3T21H455W23SR6-NXP-SEMICONDUCTORS

FORECAST ACP1230S-4L2L
可用性
庫存:
Available
訂購:
3500
輸入數量:
A3T21H400W23SR6的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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