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FQP2N80

FQP2N80
Mfr. #:
FQP2N80
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 800V N-Channel QFET
生命週期:
製造商新產品
數據表:
FQP2N80 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FQP2N80 Datasheet
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
800 V
Id - 連續漏極電流：
2.4 A
Rds On - 漏源電阻：
6.3 Ohms
Vgs - 柵源電壓：
30 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
85 W
配置：
單身的
頻道模式：
增強
商品名：
場效應管
打包：
管子
高度：
16.3 mm
長度：
10.67 mm
系列：
FQP2N80
晶體管類型：
1 N-Channel
類型：
MOSFET
寬度：
4.7 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
2.65 S
秋季時間：
28 ns
產品類別：
MOSFET
上升時間：
30 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
25 ns
典型的開啟延遲時間：
12 ns
第 # 部分別名：
FQP2N80_NL
單位重量：
0.063493 oz
Tags
FQP2N, FQP2, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,mosfet,n-Channel,800V V(Br)Dss,2.4A I(D),to-220 Rohs Compliant: Yes
***et Europe
Trans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220AB Rail
***emi
N-Channel QFET® MOSFET 800V, 2.4A, 6.3Ω
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):6.3ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation Pd:85W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Alternate Case Style:SOT-78B; On State Resistance Max:6.3ohm; Pulse Current Idm:9.6A; Voltage Vgs th Max:5V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
型號 製造商 描述 庫存 價格
FQP2N80
DISTI # V36:1790_06301280		ON SemiconductorQF 800V 6.3OHM TO2200
  • 1000000:$0.4459
  • 500000:$0.4463
  • 100000:$0.4871
  • 10000:$0.5650
  • 1000:$0.5783
FQP2N80
DISTI # FQP2N80-ND		ON SemiconductorMOSFET N-CH 800V 2.4A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$0.5783
FQP2N80
DISTI # FQP2N80		ON SemiconductorTrans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP2N80)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.4239
  • 500:€0.4329
  • 100:€0.4469
  • 50:€0.4579
  • 25:€0.5429
  • 10:€0.6539
  • 1:€0.8409
FQP2N80
DISTI # FQP2N80		ON SemiconductorTrans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP2N80)
RoHS: Compliant
Min Qty: 532
Container: Bulk		Americas - 0
  • 5320:$0.5799
  • 2660:$0.5939
  • 1596:$0.6019
  • 1064:$0.6099
  • 532:$0.6139
FQP2N80
DISTI # FQP2N80		ON SemiconductorTrans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP2N80)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.4539
  • 6000:$0.4649
  • 4000:$0.4709
  • 2000:$0.4769
  • 1000:$0.4799
FQP2N80
DISTI # 512-FQP2N80		ON SemiconductorMOSFET 800V N-Channel QFET
RoHS: Compliant		988
  • 1:$1.2000
  • 10:$1.0200
  • 100:$0.7900
  • 500:$0.6980
  • 1000:$0.5510
  • 2000:$0.4890
  • 10000:$0.4710
FQP2N80ON SemiconductorPower Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		3000
  • 1000:$0.5400
  • 500:$0.5700
  • 100:$0.5900
  • 25:$0.6200
  • 1:$0.6600
FQP2N80Fairchild Semiconductor CorporationPower Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		3621
  • 1000:$0.5400
  • 500:$0.5700
  • 100:$0.5900
  • 25:$0.6200
  • 1:$0.6600
FQP2N80Fairchild Semiconductor CorporationPower Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		1000
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    可用性
    庫存:
    988
    訂購:
    2971
    輸入數量:
    FQP2N80的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$1.20
    US$1.20
    10
    US$1.02
    US$10.20
    100
    US$0.79
    US$79.00
    500
    US$0.70
    US$349.00
    1000
    US$0.55
    US$551.00
    2000
    US$0.49
    US$978.00
    10000
    US$0.47
    US$4 710.00
    25000
    US$0.46
    US$11 400.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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