We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| IPD65R250E6XTMA1 DISTI # V72:2272_06378496 | Infineon Technologies AG | Trans MOSFET N-CH 700V 16.1A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant | 0 | |
| IPD65R250E6XTMA1 DISTI # V36:1790_06378496 | Infineon Technologies AG | Trans MOSFET N-CH 700V 16.1A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant | 0 |
|
| IPD65R250E6 DISTI # SP000898656 | Infineon Technologies AG | MOSFET N-Ch 700V 16.1A DPAK-2 (Alt: SP000898656) RoHS: Compliant Min Qty: 2500 | Europe - 0 |
|
| IPD65R250E6XT DISTI # IPD65R250E6XTMA1 | Infineon Technologies AG | Trans MOSFET N-CH 700V 16.1A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD65R250E6XTMA1) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| IPD65R250E6=FS1 DISTI # IPD65R250E6 | Infineon Technologies AG | Trans MOSFET N-CH 700V 16.1A 3-Pin TO-252 T/R (Alt: IPD65R250E6) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Asia - 0 | |
| IPD65R250E6=FS1 DISTI # IPD65R250E6 | Infineon Technologies AG | Trans MOSFET N-CH 700V 16.1A 3-Pin TO-252 T/R - Bulk (Alt: IPD65R250E6) RoHS: Not Compliant Min Qty: 302 Container: Bulk | Americas - 0 |
|
| IPD65R250E6XTMA1 DISTI # 13AC9048 | Infineon Technologies AG | MOSFET, N-CH, 650V, 16.1A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:16.1A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.23ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes | 0 |
|
| IPD65R250E6 | Infineon Technologies AG | Power Field-Effect Transistor, 650V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252 RoHS: Compliant | 90 |
|
| IPD65R250E6XTMA1 DISTI # 2726055 | Infineon Technologies AG | MOSFET, N-CH, 650V, 16.1A, TO-252-3 RoHS: Compliant | 4439 |
|
| IPD65R250E6XTMA1 DISTI # 2726055 | Infineon Technologies AG | MOSFET, N-CH, 650V, 16.1A, TO-252-3 RoHS: Compliant | 4418 |
|
| IPD65R250E6 | Infineon Technologies AG | 650V,250m,16.1A,N-Channel Power MOSFET | 40 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: IPD65R600C6 OMO.#: OMO-IPD65R600C6 |
MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS C6 |
|
|
Mfr.#: IPD65R190C7ATMA1 OMO.#: OMO-IPD65R190C7ATMA1 |
MOSFET HIGH POWER_NEW |
|
|
Mfr.#: IPD65R380C6 OMO.#: OMO-IPD65R380C6 |
MOSFET N-Ch 700V 10.6A DPAK-2 CoolMOS C6 |
|
Mfr.#: IPD65R400CEAUMA1 |
MOSFET N-CH 650V TO-252 |
|
Mfr.#: IPD65R1K4CFDATMA2 |
LOW POWER_LEGACY |
|
|
Mfr.#: IPD65R660CFDATMA2 OMO.#: OMO-IPD65R660CFDATMA2-1190 |
MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve |
|
|
Mfr.#: IPD65R1K0CEAUMA1 |
MOSFET N-CH 650V TO-252 |
|
|
Mfr.#: IPD65R250E6XTMA1INFINEON |
全新原裝 |
|
|
Mfr.#: IPD65R600C6BTMA1 |
MOSFET N-CH 650V 7.3A TO252 |
|
|
Mfr.#: IPD65R660CFDXT OMO.#: OMO-IPD65R660CFDXT-1190 |
全新原裝 |