TGF2023-2-20

Mfr. #:: TGF2023-2-20
製造商:: Qorvo
描述:: RF JFET Transistors DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB
生命週期:: 製造商新產品
數據表:: TGF2023-2-20 數據表
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更多信息:: TGF2023-2-20 更多信息

產品屬性
屬性值

製造商：: 科沃

產品分類：: 射頻 JFET 晶體管

RoHS：: Y

晶體管類型：: HEMT

技術：: 氮化鎵碳化矽

獲得：: 21 dB

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 50 V

Vgs - 柵源擊穿電壓：: 145 V

Id - 連續漏極電流：: 1.46 A

輸出功率：: 8.7 W

最大漏柵電壓：: 55 V

最低工作溫度：: - 40 C

最高工作溫度：: + 85 C

Pd - 功耗：: 13 W

安裝方式：: 貼片/貼片

包裝/案例：: SMD-8

打包：: 捲軸

工作頻率：: 30 MHz to 1200 MHz

系列：: QPD1011

品牌：: 科沃

正向跨導 - 最小值：: -

開發套件：: QPD1011EVB01

濕氣敏感：: 是的

產品類別：: 射頻 JFET 晶體管

出廠包裝數量：: 100

子類別：: 晶體管

第 # 部分別名：: QPD1011

Tags: TGF2023-2, TGF2023, TGF202, TGF20, TGF2, TGF

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2023-2-20 描述

***W: RF Power Transistor, 0 to 18 GHz, 90 W, 11.1 dB, 28 V, GaN

***S: new, original packaged

TGF2023-2-20 更多信息

GaN Solutions: Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

TGF2023 GaN HEMT Transistors: Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm GaN on SiC HEMT which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52-78.3% which makes the these devices appropriate for high efficiency applications.Learn More

Market price

型號	製造商	描述	庫存	價格
TGF2023-2-20 DISTI # 772-TGF2023-2-20	Qorvo	RF JFET Transistors DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB RoHS: Compliant	0	50:$147.8300

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