BSO110N03MSGXUMA1

BSO110N03MSGXUMA1
Mfr. #:
BSO110N03MSGXUMA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 30V 12.1A DSO-8 OptiMOS 3M
生命週期:
製造商新產品
數據表:
BSO110N03MSGXUMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
SO-8
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
30 V
Id - 連續漏極電流:
12.1 A
Rds On - 漏源電阻:
9.2 mOhms
Vgs th - 柵源閾值電壓:
1 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
20 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
2.5 W
配置:
單身的
頻道模式:
增強
商品名:
優化MOS
打包:
捲軸
高度:
1.75 mm
長度:
4.9 mm
系列:
OptiMOS 3M
晶體管類型:
1 N-Channel
寬度:
3.9 mm
品牌:
英飛凌科技
正向跨導 - 最小值:
16 S
秋季時間:
4.4 ns
濕氣敏感:
是的
產品類別:
MOSFET
上升時間:
4.4 ns
出廠包裝數量:
2500
子類別:
MOSFET
典型關斷延遲時間:
9.5 ns
典型的開啟延遲時間:
7.8 ns
第 # 部分別名:
BSO110N03MS BSO11N3MSGXT G SP000446062
單位重量:
0.019048 oz
Tags
BSO110N03MSG, BSO110N03M, BSO110, BSO11, BSO1, BSO
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Mosfet Transistor, N Channel, 10 A, 30 V, 0.0092 Ohm, 10 V, 2 V
***ment14 APAC
MOSFET, N-CH, 30V, 10A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Source Voltage Vds:30V; On Resistance
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-DSO-8, RoHS
***nell
MOSFET, N-CH, 30V, 10A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0092ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 1.56W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
Single N-Channel 30 V 2 W 12.5 nC Silicon Surface Mount Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 10.3A Automotive 8-Pin SO T/R
***(Formerly Allied Electronics)
MOSFET; N Channel; MOS; Trans; 30V; 10.3A; SO8
***S
French Electronic Distributor since 1988
***ure Electronics
N-Channel 30 V 11.9 mOhm Surface Mount Schottky Diode Mosfet - SOIC-8
***ark
Mosfet,+Sch,n Channel,30V,11A,so8; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0085Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***nell
MOSFET,+SCH,N CH,30V,11A,SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 1.55W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 11A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 20V
***ark
Mosfet Transistor, N Channel, 10.8 A, 30 V, 0.011 Ohm, 4.5 V, 3 V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20
***eco
Transistor MOSFET N Channel 30 Volt 10.8.6 Amp 8 Pin SOIC
***ure Electronics
Single N-Channel 30 V 14 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 10.8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 3V; Power Dissi
***(Formerly Allied Electronics)
IRF8707TRPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 17.5 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC
***ark
N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ark
Mosfet Transistor, N Channel, 11 A, 30 V, 13.8 Mohm, 10 V, 1.8 V
***ure Electronics
Single N-Channel 30 V 18.2 mOhm 11 nC HEXFET® Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0138ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissi
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 13.8 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 6.2 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 6.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
***ure Electronics
Single P-Channel 30 V 1.45 W 20.5 nC Silicon Surface Mount Mosfet - SOIC-8
***ical
Trans MOSFET P-CH 30V 9.9A Automotive 8-Pin SO T/R
***ark
Mosfet, P-Ch, 30V, 9.9A, Soic Rohs Compliant: Yes
型號 製造商 描述 庫存 價格
BSO110N03MSGXUMA1
DISTI # V72:2272_06390999
Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin DSO T/R
RoHS: Compliant
5000
  • 3000:$0.2775
  • 1000:$0.3083
  • 500:$0.3731
  • 250:$0.4054
  • 100:$0.4373
  • 25:$0.6025
  • 10:$0.7543
  • 1:$0.9093
BSO110N03MSGXUMA1
DISTI # V36:1790_06390999
Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin DSO T/R
RoHS: Compliant
0
  • 2500000:$0.2615
  • 1250000:$0.2617
  • 250000:$0.2782
  • 25000:$0.3055
  • 2500:$0.3100
BSO110N03MSGXUMA1
DISTI # BSO110N03MSGXUMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 10A 8DSO
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.3418
BSO110N03MSGXUMA1
DISTI # 33950970
Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin DSO T/R
RoHS: Compliant
5000
  • 23:$0.3075
BSO110N03MSGXUMA1
DISTI # BSO110N03MSGXUMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin DSO T/R - Tape and Reel (Alt: BSO110N03MSGXUMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.2849
  • 15000:$0.2899
  • 10000:$0.2999
  • 5000:$0.3109
  • 2500:$0.3229
BSO110N03MSGXUMA1
DISTI # 50Y1819
Infineon Technologies AGMOSFET Transistor, N Channel, 10 A, 30 V, 0.0092 ohm, 10 V, 2 V RoHS Compliant: Yes0
  • 1000:$0.3640
  • 500:$0.3940
  • 250:$0.4240
  • 100:$0.4530
  • 50:$0.5370
  • 25:$0.6200
  • 10:$0.7030
  • 1:$0.8380
BSO110N03MS G
DISTI # 726-BSO110N03MSG
Infineon Technologies AGMOSFET N-Ch 30V 12.1A DSO-8 OptiMOS 3M
RoHS: Compliant
2490
  • 1:$0.8300
  • 10:$0.6960
  • 100:$0.4490
  • 1000:$0.3600
BSO110N03MSGXUMA1
DISTI # 726-BSO110N03MSGXUMA
Infineon Technologies AGMOSFET N-Ch 30V 12.1A DSO-8 OptiMOS 3M
RoHS: Compliant
0
  • 1:$0.8300
  • 10:$0.6960
  • 100:$0.4490
  • 1000:$0.3600
BSO110N03MSGXUMA1
DISTI # 8268989P
Infineon Technologies AGMOSFET N-CH 10A 30V OPTIMOS3 DSO8, RL12450
  • 1000:£0.2720
  • 500:£0.3120
  • 250:£0.3160
  • 100:£0.3230
BSO110N03MSGXUMA1
DISTI # BSO110N03MSGXUMA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,12.1A,1.56W,PG-DSO-82480
  • 500:$0.3198
  • 100:$0.3435
  • 25:$0.3953
  • 5:$0.4471
  • 1:$0.5439
BSO110N03MSGXUMA1
DISTI # 2480751RL
Infineon Technologies AGMOSFET, N-CH, 30V, 10A, SOIC-8
RoHS: Compliant
0
  • 2500:$0.5440
  • 1000:$0.5540
  • 100:$0.6910
  • 10:$1.0800
  • 1:$1.2800
BSO110N03MSGXUMA1
DISTI # 2480751
Infineon Technologies AGMOSFET, N-CH, 30V, 10A, SOIC-8
RoHS: Compliant
1140
  • 2500:$0.5440
  • 1000:$0.5540
  • 100:$0.6910
  • 10:$1.0800
  • 1:$1.2800
BSO110N03MSGXUMA1
DISTI # 2480751
Infineon Technologies AGMOSFET, N-CH, 30V, 10A, SOIC-81111
  • 500:£0.3000
  • 250:£0.3220
  • 100:£0.3450
  • 10:£0.5890
  • 1:£0.7310
圖片 型號 描述
LM25007SD/NOPB

Mfr.#: LM25007SD/NOPB

OMO.#: OMO-LM25007SD-NOPB

Switching Voltage Regulators 42V 0.5A SD Switching Reg
LM25007SD/NOPB

Mfr.#: LM25007SD/NOPB

OMO.#: OMO-LM25007SD-NOPB-TEXAS-INSTRUMENTS

Voltage Regulators - Switching Regulators 42V 0.5A SD Switching Reg
可用性
庫存:
Available
訂購:
1988
輸入數量:
BSO110N03MSGXUMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$0.83
US$0.83
10
US$0.70
US$6.96
100
US$0.45
US$44.90
1000
US$0.36
US$360.00
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