IPP65R150CFDAAKSA1

Mfr. #:: IPP65R150CFDAAKSA1
製造商:: Infineon Technologies
描述:: RF Bipolar Transistors MOSFET N-Ch 650V 22.4A TO220-3
生命週期:: 製造商新產品
數據表:: IPP65R150CFDAAKSA1 數據表
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ECAD Model:
更多信息:: IPP65R150CFDAAKSA1 更多信息

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

系列: IPP65R150

打包: 管子

部分別名: IPP65R150CFDA IPP65R150CFDAXK SP000928272

單位重量: 0.211644 oz

商品名: 酷摩

包裝盒: TO-220-3

技術: 矽

通道數: 1 Channel

晶體管型: 1 N-Channel

Id 連續漏極電流: 22.4 A

Vds-漏-源-擊穿電壓: 650 V

Rds-On-Drain-Source-Resistance: 150 mOhms

晶體管極性: N通道

Tags: IPP65R15, IPP65R1, IPP65, IPP6, IPP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPP65R150CFDAAKSA1 描述

***ical: Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(3+Tab) TO-220 Tube

***et Europe: Trans MOSFET N-CH 650V 22.4A 3-Pin TO-220 Tube

***i-Key: MOSFET N-CH 650V TO-220-3

***ark: MOSFET, AEC-Q101, N-CH, 650V, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 650V, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:195.3W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (15-Jan-2019)

***nell: MOSFET, AEC-Q101, CAN N, 650V, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:22.4A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.135ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:195.3W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS Series; Standard di Qualifica Automotive:AEC-Q101; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)

***ineon: 650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting

IPP65R150CFDAAKSA1 更多信息

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

型號	製造商	描述	庫存	價格
IPP65R150CFDAAKSA1 DISTI # 30709627	Infineon Technologies AG	Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	160	5000:$2.1681 2500:$2.2572 1000:$2.3760 500:$2.8116 250:$3.1284 100:$3.2967 10:$3.8115
IPP65R150CFDAAKSA1 DISTI # IPP65R150CFDAAKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V TO-220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Temporarily Out of Stock	500:$3.1179
IPP65R150CFDAAKSA1 DISTI # V36:1790_06377112	Infineon Technologies AG	Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0
IPP65R150CFDAAKSA1 DISTI # IPP65R150CFDAAKSA1	Infineon Technologies AG	Trans MOSFET N-CH 650V 22.4A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R150CFDAAKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	5000:$2.0900 2000:$2.1900 3000:$2.1900 1000:$2.2900 500:$2.3900
IPP65R150CFDAAKSA1 DISTI # SP000928272	Infineon Technologies AG	Trans MOSFET N-CH 650V 22.4A 3-Pin TO-220 Tube (Alt: SP000928272) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€1.7900 500:€1.9900 50:€2.0900 100:€2.0900 25:€2.1900 10:€2.2900 1:€2.4900
IPP65R150CFDA DISTI # 726-IPP65R150CFDA	Infineon Technologies AG	MOSFET N-Ch 650V 22.4A TO220-3 RoHS: Compliant	2308	1:$4.5200 10:$3.8400 100:$3.3300 250:$3.1600 500:$2.8300 1000:$2.3900 2500:$2.2700
IPP65R150CFDAAKSA1 DISTI # 726-IPP65R150CFDAAKS	Infineon Technologies AG	MOSFET N-Ch 650V 22.4A TO220-3 RoHS: Compliant	470	1:$4.5200 10:$3.8400 100:$3.3300 250:$3.1600 500:$2.8300 1000:$2.3900 2500:$2.2700

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