SI4563DY-T1-GE3

SI4563DY-T1-GE3
Mfr. #:
SI4563DY-T1-GE3
製造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 40V 8.0A 3.25W 16/25mohm @ 10V
生命週期:
製造商新產品
數據表:
SI4563DY-T1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商
威世矽
產品分類
FET - 陣列
系列
溝槽FETR
打包
捲帶 (TR)
包裝盒
8-SOIC (0.154", 3.90mm Width)
工作溫度
-55°C ~ 150°C (TJ)
安裝型
表面貼裝
供應商-設備-包
8-SO
FET型
N 和 P 溝道
最大功率
3.25W
漏源電壓 Vdss
40V
輸入電容-Ciss-Vds
2390pF @ 20V
FET-Feature
標準
Current-Continuous-Drain-Id-25°C
8A
Rds-On-Max-Id-Vgs
16 mOhm @ 5A, 10V
Vgs-th-Max-Id
2V @ 250μA
柵極電荷-Qg-Vgs
85nC @ 10V
Tags
SI456, SI45, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N/P-CH 40V 8A/6.6A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Polarity:NPN & PNP; Operating Temperature Range:-55°C to +150°C; Package/Case:8-SOIC; Termination Type:SMD; Transistor Type:MOSFET ;RoHS Compliant: Yes
***ment14 APAC
NPN & PNP MOSFET, SOIC; Transistor Polar; NPN & PNP MOSFET, SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:8A; Continuous Drain Current Id, P Channel:-6.6A; Drain Source Voltage Vds, N Channel:40V; Drain Source Voltage Vds, P Channel:-40V
型號 製造商 描述 庫存 價格
SI4563DY-T1-GE3
DISTI # SI4563DY-T1-GE3-ND
Vishay SiliconixMOSFET N/P-CH 40V 8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI4563DY-T1-GE3
    DISTI # 781-SI4563DY-GE3
    Vishay IntertechnologiesMOSFET 40V 8.0A 3.25W 16/25mohm @ 10V
    RoHS: Compliant
    0
      圖片 型號 描述
      SI4563DY-T1-GE3

      Mfr.#: SI4563DY-T1-GE3

      OMO.#: OMO-SI4563DY-T1-GE3

      MOSFET RECOMMENDED ALT 781-SI4564DY-T1-GE3
      SI4563DY-T1-GE3

      Mfr.#: SI4563DY-T1-GE3

      OMO.#: OMO-SI4563DY-T1-GE3-VISHAY

      RF Bipolar Transistors MOSFET 40V 8.0A 3.25W 16/25mohm @ 10V
      SI4563DY-T1-E3

      Mfr.#: SI4563DY-T1-E3

      OMO.#: OMO-SI4563DY-T1-E3-VISHAY

      MOSFET N/P-CH 40V 8A 8-SOIC
      可用性
      庫存:
      Available
      訂購:
      2000
      輸入數量:
      SI4563DY-T1-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$0.00
      US$0.00
      10
      US$0.00
      US$0.00
      100
      US$0.00
      US$0.00
      500
      US$0.00
      US$0.00
      1000
      US$0.00
      US$0.00
      由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
      從...開始
      Top