AS4C16M32MD1-5BIN

Mfr. #:: AS4C16M32MD1-5BIN
製造商:: Alliance Memory
描述:: DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
生命週期:: 製造商新產品
數據表:: AS4C16M32MD1-5BIN 數據表
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ECAD Model:
更多信息:: AS4C16M32MD1-5BIN 更多信息

產品屬性
屬性值

製造商: 聯盟記憶公司

產品分類: 記憶

系列: -

打包: 托盤替代包裝

包裝盒: 90-VFBGA

工作溫度: -40°C ~ 85°C (TJ)

界面: 平行線

電壓供應: 1.7 V ~ 1.95 V

供應商-設備-包: 90-FBGA (8x13)

內存大小: 512M (16M x 32)

內存型: 移動DDR SDRAM

速度: 200MHz

格式化內存: 內存

Tags: AS4C16M32MD, AS4C16M32M, AS4C16M3, AS4C16M, AS4C16, AS4C1, AS4C, AS4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

AS4C16M32MD1-5BIN 描述

***metry Electronics: DDR 512MB 200MHz 400Mbps/pin 1.8V 16M x 32 90-ball FPBGA

***et: DRAM Chip DDR SDRAM 512Mbit 16M X 32 90-Pin FBGA Tray

***i-Key: IC DRAM 512M PARALLEL 90FBGA

AS4C16M32MD1-5BIN 更多信息

Mobile DDR: Alliance Memory Mobile DDR is fabricated with high-performance CMOS technology. Mobile DDR uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O balls. The range of operating frequencies, programmable burst lengths, and programmable latencies allow the same device to be useful for a variety of high-bandwidth and high-performance memory system applications.Learn More

Market price

型號	製造商	描述	庫存	價格
AS4C16M32MD1-5BIN DISTI # 1450-1121-ND	Alliance Memory Inc	IC DRAM 512M PARALLEL 90FBGA RoHS: Compliant Min Qty: 160 Container: Tray	Temporarily Out of Stock	1120:$3.6619 640:$3.8246 320:$4.0793 160:$4.0950
AS4C16M32MD1-5BINTR DISTI # AS4C16M32MD1-5BINTR-ND	Alliance Memory Inc	IC DRAM 512M PARALLEL 90FBGA RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$3.6146 1000:$3.7351
AS4C16M32MD1-5BIN DISTI # AS4C16M32MD1-5BIN	Alliance Memory Inc	DRAM Chip DDR SDRAM 512Mbit 16M X 32 90-Pin FBGA Tray - Trays (Alt: AS4C16M32MD1-5BIN) Min Qty: 160 Container: Tray	Americas - 0
AS4C16M32MD1-5BINTR DISTI # AS4C16M32MD1-5BINTR	Alliance Memory Inc	DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16M x 32 1.8V 90-Pin FPBGA T/R (Alt: AS4C16M32MD1-5BINTR) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€3.6900 2000:€3.5900 4000:€3.3900 6000:€3.1900 10000:€2.9900
AS4C16M32MD1-5BINTR DISTI # AS4C16M32MD1-5BINTR	Alliance Memory Inc	DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16M x 32 1.8V 90-Pin FPBGA T/R - Tape and Reel (Alt: AS4C16M32MD1-5BINTR) Min Qty: 1000 Container: Reel	Americas - 0
AS4C16M32MD1-5BIN DISTI # 913-AS4C16M32MD15BIN	Alliance Memory Inc	DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR RoHS: Compliant	210	1:$5.3800 10:$4.9100 25:$4.8200 50:$4.7900 100:$4.2900 250:$4.2800 500:$4.0100 1000:$3.8400 2000:$3.7200
AS4C16M32MD1-5BINTR DISTI # 913-A4C16M32MD15BINT	Alliance Memory Inc	DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR RoHS: Compliant	0	1000:$3.9200 2000:$3.7900
AS4C16M32MD1-5BIN	Alliance Memory Inc	512MbDDR116M x 321.8v90-Ball BGA200MHz Industrial Temp (-40c to +85c)	9
AS4C16M32MD1-5BINTR	Alliance Memory Inc	SDRAM 512MBIT 200MHZ 90BGA	1000

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