IXTX550N055T2

Mfr. #:: IXTX550N055T2
製造商:: Littelfuse
描述:: Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
生命週期:: 製造商新產品
數據表:: IXTX550N055T2 數據表
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更多信息:: IXTX550N055T2 更多信息

產品屬性
屬性值

製造商: IXYS

產品分類: PMIC - 柵極驅動器

Tags: IXTX, IXT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXTX550N055T2 描述

***i-Key: MOSFET N-CH 55V 550A PLUS247

IXTX550N055T2 更多信息

Electrical Vehicle DC Fast Chargers: DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

GigaMOS™ TrenchT2™ Power MOSFETs: IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.

Market price

型號	製造商	描述	庫存	價格
IXTX550N055T2 DISTI # IXTX550N055T2-ND	IXYS Corporation	MOSFET N-CH 55V 550A PLUS247 RoHS: Compliant Min Qty: 30 Container: Tube	Temporarily Out of Stock	30:$16.1173
IXTX550N055T2 DISTI # 747-IXTX550N055T2	IXYS Corporation	Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET RoHS: Compliant	0	1:$19.8000 10:$17.8100 25:$16.2400 50:$15.0500 100:$14.6300 250:$13.4700 500:$12.2800