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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| BSC100N06LS3 G DISTI # C1S322000299296 | Infineon Technologies AG | Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R RoHS: Compliant | 2 |
|
| BSC100N06LS3GATMA1 DISTI # BSC100N06LS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 21549In Stock |
|
| BSC100N06LS3GATMA1 DISTI # BSC100N06LS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 21549In Stock |
|
| BSC100N06LS3GATMA1 DISTI # BSC100N06LS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | 20000In Stock |
|
| BSC100N06LS3 G DISTI # BSC100N06LS3 G | Infineon Technologies AG | Trans MOSFET N-CH 60V 12A 8-Pin TDSON T/R (Alt: BSC100N06LS3 G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 5000 |
|
| BSC100N06LS3GATMA1 DISTI # BSC100N06LS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 12A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC100N06LS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC100N06LS3GATMA1 DISTI # 47W3311 | Infineon Technologies AG | MOSFET, N CHANNEL, 60V, 50A, 8TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes | 3102 |
|
| BSC100N06LS3 G DISTI # 726-BSC100N06LS3G | Infineon Technologies AG | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 RoHS: Compliant | 0 |
|
| BSC100N06LS3GATMA1 DISTI # 726-BSC100N06LS3GATM | Infineon Technologies AG | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 RoHS: Compliant | 0 |
|
| BSC100N06LS3GATMA1 | Infineon Technologies AG | Single N-Channel 60 V 10 mOhm 45 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Not Compliant | 10000Reel |
|
| BSC100N06LS3GATMA1 DISTI # 7545298 | Infineon Technologies AG | MOSFET N-CHANNEL 60V 12A OPTIMOS3 TDSON8, PK | 1395 |
|
| BSC100N06LS3GATMA1 DISTI # 7545298P | Infineon Technologies AG | MOSFET N-CHANNEL 60V 12A OPTIMOS3 TDSON8, RL | 1270 |
|
| BSC100N06LS3G | Infineon Technologies AG | 60V,50A,N Channel Power MOSFET | 2 |
|
| BSC100N06LS3GATMA1 DISTI # 2212844 | Infineon Technologies AG | MOSFET, N-CH, 60V, 50A, 8TDSON RoHS: Compliant | 7982 |
|
| BSC100N06LS3GATMA1 DISTI # 2212844 | Infineon Technologies AG | MOSFET, N-CH, 60V, 50A, 8TDSON RoHS: Compliant | 3102 |
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| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: BSC100N10NSF G OMO.#: OMO-BSC100N10NSF-G |
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 |
|
Mfr.#: BSC100N03LS G OMO.#: OMO-BSC100N03LS-G-1190 |
MOSFET, N CH, 30V, 44A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:44A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0083ohm, Rds(on) Test Voltage Vgs:10V, Th |
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Mfr.#: BSC100N03LSG OMO.#: OMO-BSC100N03LSG-1190 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC100N03MS OMO.#: OMO-BSC100N03MS-1190 |
全新原裝 |
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Mfr.#: BSC100N03MS G OMO.#: OMO-BSC100N03MS-G-1190 |
Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP |
|
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Mfr.#: BSC100N03MSG OMO.#: OMO-BSC100N03MSG-1190 |
Trans MOSFET N-CH 30V 12A 8-Pin TDSON T/R (Alt: BSC100N03MS G) |
|
|
Mfr.#: BSC100N06LS3 G OMO.#: OMO-BSC100N06LS3-G-1190 |
Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R |
|
Mfr.#: BSC100N06LS3GATMA1 |
MOSFET N-CH 60V 50A TDSON-8 |
|
|
Mfr.#: BSC100N03MSGATMA1 |
MOSFET N-CH 30V 44A TDSON-8 |
|
|
Mfr.#: BSC100N10NSF G OMO.#: OMO-BSC100N10NSF-G-128 |
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 |