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IPB60R165CPATMA1

IPB60R165CPATMA1
Mfr. #:
IPB60R165CPATMA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP
生命週期:
製造商新產品
數據表:
IPB60R165CPATMA1 數據表
交貨:
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支付:
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HTML Datasheet:
IPB60R165CPATMA1 DatasheetIPB60R165CPATMA1 Datasheet (P4-P6)IPB60R165CPATMA1 Datasheet (P7-P9)IPB60R165CPATMA1 Datasheet (P10)
ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-263-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
21 A
Rds On - 漏源電阻：
150 mOhms
Vgs th - 柵源閾值電壓：
2.5 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
52 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
192 W
配置：
單身的
頻道模式：
增強
商品名：
酷摩
打包：
捲軸
高度：
4.4 mm
長度：
10 mm
系列：
CoolMOS CE
晶體管類型：
1 N-Channel
寬度：
9.25 mm
品牌：
英飛凌科技
秋季時間：
5 ns
產品類別：
MOSFET
上升時間：
5 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
50 ns
典型的開啟延遲時間：
12 ns
第 # 部分別名：
IPB60R165CP IPB6R165CPXT SP000096439
單位重量：
0.139332 oz
Tags
IPB60R165, IPB60R16, IPB60R1, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 1000, N-Channel MOSFET, 21 A, 650 V, 3-Pin D2PAK Infineon IPB60R165CPATMA1
***ure Electronics
Single N-Channel 600 V 165 mOhm 39 nC CoolMOS™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 650V 21A 3-Pin(2+Tab) D2PAK T/R
***p One Stop Global
Trans MOSFET N-CH 650V 21A 3-Pin(2+Tab) TO-263 T/R
***et Europe
Trans MOSFET N-CH 650V 21A 3-Pin TO-263 T/R
***i-Key
MOSFET N-CH 600V 21A D2PAK
***ronik
N-CH 650V 21A 165mOhm TO263
***ark
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:21A; Resistance, Rds On:0.165ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:21A; On State Resistance:0.165ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; SVHC:Cobalt dichloride
***ment14 APAC
MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:650V; On Resistance Rds(on):165mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:192W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:21A; Package / Case:TO-263; Power Dissipation Pd:192W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
型號 製造商 描述 庫存 價格
IPB60R165CPATMA1
DISTI # IPB60R165CPATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V 21A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$2.4678
IPB60R165CPATMA1
DISTI # IPB60R165CPATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 600V 21A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
  • 500:$3.0140
  • 100:$3.7221
  • 10:$4.5390
  • 1:$5.0800
IPB60R165CPATMA1
DISTI # IPB60R165CPATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 600V 21A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
  • 500:$3.0140
  • 100:$3.7221
  • 10:$4.5390
  • 1:$5.0800
IPB60R165CPATMA1
DISTI # IPB60R165CPATMA1		Infineon Technologies AGTrans MOSFET N-CH 650V 21A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB60R165CPATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.9900
  • 2000:$1.9900
  • 4000:$1.9900
  • 6000:$1.9900
  • 10000:$1.9900
IPB60R165CPATMA1
DISTI # SP000096439		Infineon Technologies AGTrans MOSFET N-CH 650V 21A 3-Pin TO-263 T/R (Alt: SP000096439)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€2.1900
  • 2000:€2.0900
  • 4000:€1.9900
  • 6000:€1.8900
  • 10000:€1.6900
IPB60R165CPATMA1
DISTI # 33P7134		Infineon Technologies AGMOSFET, N CHANNEL, 650V, 21A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1:$4.2500
  • 10:$3.6100
  • 25:$3.4500
  • 50:$3.2900
  • 100:$3.1300
  • 250:$2.9700
  • 500:$2.6700
IPB60R165CP
DISTI # 726-IPB60R165CP		Infineon Technologies AGMOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP
RoHS: Compliant		0
  • 1:$4.2500
  • 10:$3.6100
  • 100:$3.1300
  • 250:$2.9700
  • 500:$2.6700
  • 1000:$2.2500
IPB60R165CPATMA1
DISTI # 726-IPB60R165CPATMA1		Infineon Technologies AGMOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP
RoHS: Compliant		0
  • 1:$4.2500
  • 10:$3.6100
  • 100:$3.1300
  • 250:$2.9700
  • 500:$2.6700
  • 1000:$2.2500
IPB60R165CPATMA1
DISTI # 1664017		Infineon Technologies AGMOSFET, N, TO-263
RoHS: Compliant		0
  • 1:£3.1700
  • 10:£2.2800
  • 100:£2.1800
  • 250:£2.0700
  • 500:£1.8500
IPB60R165CPATMA1
DISTI # 1664017RL		Infineon Technologies AGMOSFET, N, TO-263
RoHS: Compliant		0
  • 1:$6.7200
  • 10:$5.7200
  • 100:$4.9600
IPB60R165CPATMA1
DISTI # 1664017		Infineon Technologies AGMOSFET, N, TO-263
RoHS: Compliant		0
  • 1:$6.7200
  • 10:$5.7200
  • 100:$4.9600
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可用性
庫存:
490
訂購:
2473
輸入數量:
IPB60R165CPATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$4.24
US$4.24
10
US$3.60
US$36.00
100
US$3.12
US$312.00
250
US$2.96
US$740.00
500
US$2.66
US$1 330.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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