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IXXN110N65C4H1

IXXN110N65C4H1
Mfr. #:
IXXN110N65C4H1
製造商:
Littelfuse
描述:
IGBT Modules 650V/234A Trench IGBT GenX4 XPT
生命週期:
製造商新產品
數據表:
IXXN110N65C4H1 數據表
交貨:
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HTML Datasheet:
IXXN110N65C4H1 DatasheetIXXN110N65C4H1 Datasheet (P4-P6)IXXN110N65C4H1 Datasheet (P7)
ECAD Model:
更多信息:
IXXN110N65C4H1 更多信息
產品屬性
屬性值
製造商：
IXYS
產品分類：
IGBT 模塊
RoHS：
Y
產品：
IGBT 矽模塊
配置：
單雙發射器
集電極-發射極電壓 VCEO 最大值：
650 V
集電極-發射極飽和電壓：
1.98 V
25 C 時的連續集電極電流：
210 A
柵極-發射極漏電流：
100 nA
Pd - 功耗：
750 W
包裝/案例：
SOT-227B-4
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
打包：
管子
系列：
IXXN110N65
品牌：
IXYS
安裝方式：
貼片/貼片
最大柵極發射極電壓：
20 V
產品類別：
IGBT 模塊
出廠包裝數量：
10
子類別：
IGBT
商品名：
XPT
單位重量：
1.058219 oz
Tags
IXXN1, IXXN, IXX
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
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***roFlash
Insulated Gate Bipolar Transistor, 210A I(C), 650V V(BR)CES, N-Channel
***ical
Trans IGBT Chip N-CH 650V 200A 750000mW 4-Pin SOT-227B
***el Electronic
IGBT Modules 650V/234A Trench IGBT GenX4 XPT
***i-Key
IGBT MOD 650V 210A 750W SOT227B
IGBT Modules
Littelfuse IGBT Modules offer a comprehensive portfolio. The Littelfuse IGBT Modules range from phase legs to six-packs and everything in between. This makes Littelfuse able to accommodate a wide array of topology and package requirements.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
型號 製造商 描述 庫存 價格
IXXN110N65C4H1
DISTI # IXXN110N65C4H1-ND		IXYS CorporationIGBT 650V 210A 750W SOT227B
RoHS: Compliant
Min Qty: 1
Container: Tube		375In Stock
  • 250:$17.3260
  • 100:$18.8794
  • 30:$20.3133
  • 10:$22.1060
  • 1:$23.9000
IXXN110N65C4H1
DISTI # 747-IXXN110N65C4H1		IXYS CorporationIGBT Modules 650V/234A Trench IGBT GenX4 XPT
RoHS: Compliant		1973
  • 1:$23.9000
  • 5:$22.7600
  • 10:$22.1100
  • 25:$20.3200
  • 50:$19.4600
  • 100:$18.8800
  • 200:$17.3300
IXXN110N65C4H1IXYS Corporation 20
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    471-015

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    CRCW0805100RJNEAC

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    		 D12/CRCW0805-C 200 100R 5% ET1
    可用性
    庫存:
    310
    訂購:
    2293
    輸入數量:
    IXXN110N65C4H1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$23.90
    US$23.90
    5
    US$22.76
    US$113.80
    10
    US$22.10
    US$221.00
    25
    US$20.31
    US$507.75
    50
    US$19.46
    US$973.00
    100
    US$18.87
    US$1 887.00
    200
    US$17.32
    US$3 464.00
    500
    US$16.13
    US$8 065.00
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