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IRF8707GTRPBF

IRF8707GTRPBF
Mfr. #:
IRF8707GTRPBF
製造商:
Infineon Technologies
描述:
MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC
生命週期:
製造商新產品
數據表:
IRF8707GTRPBF 數據表
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HTML Datasheet:
IRF8707GTRPBF DatasheetIRF8707GTRPBF Datasheet (P4-P6)IRF8707GTRPBF Datasheet (P7-P9)
ECAD Model:
更多信息:
IRF8707GTRPBF 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
SO-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
30 V
Id - 連續漏極電流：
11 A
Rds On - 漏源電阻：
14.2 mOhms
Vgs th - 柵源閾值電壓：
1.8 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
6.2 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
2.5 W
配置：
單身的
打包：
捲軸
高度：
1.75 mm
長度：
4.9 mm
晶體管類型：
1 N-Channel
寬度：
3.9 mm
品牌：
英飛凌科技
正向跨導 - 最小值：
25 S
秋季時間：
4.4 ns
產品類別：
MOSFET
上升時間：
7.9 ns
出廠包裝數量：
4000
子類別：
MOSFET
典型關斷延遲時間：
7.3 ns
典型的開啟延遲時間：
6.7 ns
第 # 部分別名：
SP001566566
單位重量：
0.017870 oz
Tags
IRF8707G, IRF870, IRF87, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin
***(Formerly Allied Electronics)
MOSFET, 30V, 11A, 11.9 MOHM, 6.2 NC QG, SO-8, HALOGEN-FREE
***et
Trans MOSFET N-CH 30V 11A 8-Pin SOIC T/R
***nell
MOSFET, N-CH, 30V, 11A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0093ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Pow
***(Formerly Allied Electronics)
IRF8707TRPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC
*** Electronics
In a Pack of 10, IRF8707PBF N-Channel MOSFET, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon
***ure Electronics
Single N-Channel 30 V 17.5 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC
***ark
N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ark
Mosfet Transistor, N Channel, 13 A, 30 V, 10 Mohm, 10 V, 1.8 V
***et Japan
Transistor MOSFET N-CH 30V 13A 8-Pin SOIC T/R
***(Formerly Allied Electronics)
MOSFET, 30V, 13A, 10 mOhm, 9.5 nC Qg, SO-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipa
***Yang
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
***emi
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ
***ure Electronics
N-Channel 30 V 9.5 mOhm Surface Mount Logic Level PowerTrench Mosfet -SOIC-8
***et Europe
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS6680A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
***ure Electronics
Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8
***nsix Microsemi
Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.7A; On Resistance Rds(On):0.0125Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V Rohs Compliant: Yes
***nell
MOSFET,DUAL N-CH 30V 9.7A SO8; Transistor Type:Power MOSFET; Transistor Polarity:N ; Voltage, Vds Typ:30V; Current, Id Cont:9.7A; On State Resistance:15.5mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +175°C; No. of Pins:8; Power Dissipation Pd:2W; Voltage, Vgs th Max:2.35V; Transistor Case Style:SOIC
***Yang
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
***emi
N-Channel Power Trench® MOSFET, Logic Level, 30V, 11A, 12.5mΩ
***ure Electronics
N-Channel 30 V 12.5 mO Surface Mount PowerTrench Mosfet - SOIC-8
***et Europe
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
***-Wing Technology
ON SEMICONDUCTOR - FDS6690A - Power MOSFET, N Channel, 30 V, 11 A, 0.0125 ohm, SOIC, Surface Mount
***nell
MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation P
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***ure Electronics
N-Channel 30 V 23 mOhm 13 nC Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 8.5A, 23mΩ
***Yang
Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC N T/R - Tape and Reel
***enic
30V 8.5A 23m´Î@10V8.5A 2.5W 2.5V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
***nell
MOSFET, N, SO-8; Transistor Polarity:N; Current Id Max:8.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SO; No. of Pins:8; SVHC:No SVHC (18-Jun-2010); Continuous Drain Current, Id:8.5A; Package / Case:SO-8 (SOIC-8); Termination Type:SMD; Threshold Voltage Vgs Typ:1.7V; Transistor Type:PowerTrench; Typ Voltage Vds:30V; Voltage Vgs Rds on Measurement:10V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
型號 製造商 描述 庫存 價格
IRF8707GTRPBF
DISTI # V72:2272_13891194		Infineon Technologies AGTrans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 3000:$0.1648
  • 1000:$0.1832
  • 500:$0.2039
  • 250:$0.2266
  • 100:$0.2517
  • 25:$0.3711
  • 10:$0.4123
  • 1:$0.5034
IRF8707GTRPBF
DISTI # IRF8707GTRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		16391In Stock
  • 1000:$0.2387
  • 500:$0.3024
  • 100:$0.4044
  • 10:$0.5320
  • 1:$0.6300
IRF8707GTRPBF
DISTI # IRF8707GTRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		16391In Stock
  • 1000:$0.2387
  • 500:$0.3024
  • 100:$0.4044
  • 10:$0.5320
  • 1:$0.6300
IRF8707GTRPBF
DISTI # IRF8707GTRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		12000In Stock
  • 4000:$0.2132
IRF8707GTRPBF
DISTI # 30150658		Infineon Technologies AGTrans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 3000:$0.1648
  • 1000:$0.1832
  • 500:$0.2039
  • 250:$0.2266
  • 100:$0.2517
  • 56:$0.3711
IRF8707GTRPBF
DISTI # IRF8707GTRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF8707GTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.1289
  • 8000:$0.1249
  • 16000:$0.1199
  • 24000:$0.1159
  • 40000:$0.1139
IRF8707GTRPBF
DISTI # SP001566566		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin SOIC T/R (Alt: SP001566566)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€0.2569
  • 8000:€0.1999
  • 16000:€0.1629
  • 24000:€0.1379
  • 40000:€0.1279
IRF8707GTRPBF
DISTI # 91Y4759		Infineon Technologies AGMOSFET, N-CH, 30V, 11A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0093ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power RoHS Compliant: Yes1269
  • 1:$0.5300
  • 10:$0.4340
  • 25:$0.3780
  • 50:$0.3210
  • 100:$0.2650
  • 250:$0.2450
  • 500:$0.2250
  • 1000:$0.2050
IRF8707GTRPBF
DISTI # 70019208		Infineon Technologies AGMOSFET,30V,11A,11.9 MOHM,6.2 NC QG,SO-8,HALOGEN-FREE
RoHS: Compliant		0
  • 4000:$0.5300
IRF8707GTRPBF
DISTI # 942-IRF8707GTRPBF		Infineon Technologies AGMOSFET MOSFT 30V 11A 11.9mOhm 6.2nC
RoHS: Compliant		8602
  • 1:$0.5300
  • 10:$0.4340
  • 100:$0.2650
  • 1000:$0.2050
  • 4000:$0.1740
IRF8707GTRPBFInternational Rectifier 1569
    IRF8707GTRPBF
    DISTI # 8655774P    		Infineon Technologies AGMOSFET N-CH 30V 11A HEXFET SOIC8, RL4350
    • 125:£0.2410
    IRF8707GTRPBFInternational RectifierINSTOCK3452
      IRF8707GTRPBF
      DISTI # C1S322000487040      		Infineon Technologies AGTrans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R
      RoHS: Compliant      		4000
      • 250:$0.2266
      • 100:$0.2517
      • 25:$0.3711
      • 10:$0.4123
      IRF8707GTRPBF
      DISTI # 2579998      		Infineon Technologies AGMOSFET, N-CH, 30V, 11A, SOIC-8
      RoHS: Compliant      		1248
      • 5:£0.3790
      • 25:£0.3570
      • 100:£0.2040
      • 250:£0.1810
      • 500:£0.1580
      IRF8707GTRPBF
      DISTI # 2579998      		Infineon Technologies AGMOSFET, N-CH, 30V, 11A, SOIC-8
      RoHS: Compliant      		1229
      • 1:$0.9660
      • 10:$0.8080
      • 100:$0.6060
      • 500:$0.4440
      • 1000:$0.3430
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      可用性
      庫存:
      Available
      訂購:
      1991
      輸入數量:
      IRF8707GTRPBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$0.49
      US$0.49
      10
      US$0.41
      US$4.07
      100
      US$0.25
      US$24.80
      1000
      US$0.19
      US$192.00
      由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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