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MRFE6VP5600HR5

MRFE6VP5600HR5
Mfr. #:
MRFE6VP5600HR5
製造商:
NXP / Freescale
描述:
RF MOSFET Transistors VHV6 600W 50V NI1230H
生命週期:
製造商新產品
數據表:
MRFE6VP5600HR5 數據表
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ECAD Model:
更多信息:
MRFE6VP5600HR5 更多信息
產品屬性
屬性值
製造商：
恩智浦
產品分類：
射頻 MOSFET 晶體管
RoHS：
Y
晶體管極性：
N通道
技術：
矽
Vds - 漏源擊穿電壓：
130 V
獲得：
25 dB
輸出功率：
600 W
最高工作溫度：
+ 150 C
安裝方式：
貼片/貼片
包裝/案例：
NI-1230
打包：
捲軸
配置：
雙重的
工作頻率：
1.8 MHz to 600 MHz
系列：
MRFE6VP5600
類型：
射頻功率MOSFET
品牌：
恩智浦/飛思卡爾
Pd - 功耗：
1.667 kW
產品類別：
射頻 MOSFET 晶體管
出廠包裝數量：
50
子類別：
MOSFET
Vgs - 柵源電壓：
10 V
Vgs th - 柵源閾值電壓：
2.2 V
第 # 部分別名：
935310538178
單位重量：
0.464036 oz
Tags
MRFE6VP5600HR, MRFE6VP5600H, MRFE6VP56, MRFE6VP5, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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TRANSISTOR, RF, 130V, NI-1230-4; Drain Source Voltage Vds: 130VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.667kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-1230; N
***W
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RF POWER FET, N CH, 125V, NI-780-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; No. of Pins:4;RoHS Compliant: Yes
***W
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
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Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
*** Stop Electro
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***nell
RF FET, 1.8MHZ-600MHZ, NI-780S; Drain Source Voltage Vds: 130V; Continuous Drain Current Id: -; Power Dissipation Pd: 1.05kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-780S; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***escale Semiconductor
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
***ical
Trans RF MOSFET N-CH 130V 5-Pin NI-780S T/R
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IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223
***eco
Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3
*** Source Electronics
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223
***nsix Microsemi
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***hard Electronics
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***SIT Distribution GmbH
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
***ment14 APAC
MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***nsix Microsemi
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No
MRFE6VPx Lateral N-Ch Broadband RF Power MOSFETs
NXP's MRFE6VPx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More
型號 製造商 描述 庫存 價格
MRFE6VP5600HR5
DISTI # V72:2272_07190028		NXP SemiconductorsTrans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R
RoHS: Compliant		52
  • 25:$151.4100
  • 10:$151.5100
  • 1:$157.6900
MRFE6VP5600HR5
DISTI # MRFE6VP5600HR5CT-ND		NXP SemiconductorsFET RF 2CH 130V 230MHZ NI1230
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		120In Stock
  • 10:$154.9880
  • 1:$161.8300
MRFE6VP5600HR5
DISTI # MRFE6VP5600HR5DKR-ND		NXP SemiconductorsFET RF 2CH 130V 230MHZ NI1230
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		120In Stock
  • 10:$154.9880
  • 1:$161.8300
MRFE6VP5600HR5
DISTI # MRFE6VP5600HR5TR-ND		NXP SemiconductorsFET RF 2CH 130V 230MHZ NI1230
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		50In Stock
  • 50:$158.6746
MRFE6VP5600HR5
DISTI # 25766997		NXP SemiconductorsTrans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R
RoHS: Compliant		52
  • 25:$151.3300
  • 10:$151.4100
  • 1:$157.6000
MRFE6VP5600HR5
DISTI # 30335853		NXP SemiconductorsTrans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R
RoHS: Compliant		50
  • 1:$168.8148
MRFE6VP5600HR5
DISTI # 30565703		NXP SemiconductorsTrans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R
RoHS: Compliant		3
  • 1:$141.8750
MRFE6VP5600HR5
DISTI # MRFE6VP5600HR5		NXP SemiconductorsTrans MOSFET N-CH 130V 4-Pin NI-1230 T/R (Alt: MRFE6VP5600HR5)
RoHS: Compliant
Min Qty: 50
Container: Tape and Reel		Europe - 40
  • 50:€120.4900
  • 100:€115.6900
  • 200:€111.2900
  • 300:€103.2900
  • 500:€96.3900
MRFE6VP5600HR5
DISTI # MRFE6VP5600HR5		NXP SemiconductorsTrans MOSFET N-CH 130V 4-Pin NI-1230 T/R - Tape and Reel (Alt: MRFE6VP5600HR5)
RoHS: Compliant
Min Qty: 50
Container: Reel		Americas - 0
  • 50:$155.3900
  • 100:$154.9900
  • 200:$154.5900
  • 300:$154.1900
  • 500:$153.8900
MRFE6VP5600HR5
DISTI # MRFE6VP5600HR5		NXP SemiconductorsTrans MOSFET N-CH 130V 4-Pin NI-1230 T/R (Alt: MRFE6VP5600HR5)
RoHS: Compliant
Min Qty: 50
Container: Tape and Reel		Asia - 0
  • 50:$118.8000
  • 100:$115.5000
  • 150:$112.3784
  • 250:$109.4210
  • 500:$108.0000
  • 1250:$106.6154
  • 2500:$103.9500
MRFE6VP5600HR5
DISTI # 24T5453		NXP SemiconductorsTrans MOSFET N-CH 130V 4-Pin NI-1230 T/R - Product that comes on tape, but is not reeled (Alt: 24T5453)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$186.3000
  • 10:$178.4200
  • 25:$175.7900
MRFE6VP5600HR5
DISTI # 24T5453		NXP SemiconductorsRF POWER MOSFET, LATERAL N CHANNEL, 130V 600W, NI-1230,Drain Source Voltage Vds:130V,Continuous Drain Current Id:100mA,Power Dissipation Pd:1.667kW,Operating Frequency Min:1.8MHz,Operating Frequency Max:600MHz,No. of Pins:4PinsRoHS Compliant: Yes3
  • 1:$113.5000
  • 10:$113.5000
  • 25:$113.5000
MRFE6VP5600HR5
DISTI # 29X4271		NXP SemiconductorsRF POWER MOSFET, LATERAL N CHANNEL, 130V 600W, NI-1230, FULL REEL,Drain Source Voltage Vds:130V,Continuous Drain Current Id:100mA,Power Dissipation Pd:1.667kW,Operating Frequency Min:1.8MHz,Operating Frequency Max:600MHz,MSL:- RoHS Compliant: Yes0
  • 1:$198.9600
  • 10:$194.7500
  • 25:$182.1400
  • 50:$161.1300
MRFE6VP5600HR6
DISTI # 841-MRFE6VP5600HR6		NXP SemiconductorsRF MOSFET Transistors VHV6 600W 50V NI1230H
RoHS: Compliant		84
  • 1:$132.7800
  • 5:$130.2100
  • 10:$125.9100
  • 25:$120.5800
  • 50:$118.9200
  • 100:$110.6000
  • 150:$108.1200
MRFE6VP5600HR5
DISTI # 841-MRFE6VP5600HR5		NXP SemiconductorsRF MOSFET Transistors VHV6 600W 50V NI1230H
RoHS: Compliant		52
  • 1:$186.3000
  • 5:$182.1500
  • 10:$178.4200
  • 25:$175.7900
  • 50:$169.4000
MRFE6VP5600HR5Freescale SemiconductorRF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RoHS: Compliant		181
  • 1000:$109.4200
  • 500:$115.1800
  • 100:$119.9100
  • 25:$125.0500
  • 1:$134.6700
MRFE6VP5600HR5
DISTI # MRFE6VP5600HR5		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		1
  • 1:$139.0600
  • 10:$128.5200
  • 25:$124.7400
MRFE6VP5600HR5
DISTI # 2776265		NXP SemiconductorsTRANSISTOR, RF, 130V, NI-1230-4
RoHS: Compliant		37
  • 1:£123.0000
  • 5:£120.0000
  • 10:£117.0000
MRFE6VP5600HR5
DISTI # 2776265		NXP SemiconductorsTRANSISTOR, RF, 130V, NI-1230-4
RoHS: Compliant		37
  • 1:$198.7000
  • 5:$192.0800
  • 10:$182.9300
MRFE6VP5600HR5
DISTI # C1S233100211566		NXP SemiconductorsTrans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R
RoHS: Compliant		52
  • 25:$151.3300
  • 10:$151.4100
  • 1:$157.6000
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可用性
庫存:
23
訂購:
2006
輸入數量:
MRFE6VP5600HR5的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$168.04
US$168.04
5
US$164.48
US$822.40
10
US$160.93
US$1 609.30
25
US$137.84
US$3 446.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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