NTMFS4839NHT3G

Mfr. #:: NTMFS4839NHT3G
製造商:: ON Semiconductor
描述:: MOSFET NFET S08FL 30V 66A 5.5MO
生命週期:: 製造商新產品
數據表:: NTMFS4839NHT3G 數據表
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HTML Datasheet:: NTMFS4839NHT3G Datasheet NTMFS4839NHT3G Datasheet (P4-P6)NTMFS4839NHT3G Datasheet (P7)
ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: SO-FL-8

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 30 V

Id - 連續漏極電流：: 24 A

Rds On - 漏源電阻：: 5.5 mOhms

Vgs - 柵源電壓：: 20 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 5.7 W

配置：: 單身的

頻道模式：: 增強

打包：: 捲軸

高度：: 1.05 mm

長度：: 4.9 mm

晶體管類型：: 1 N-Channel

寬度：: 5.8 mm

品牌：: 安森美半導體

秋季時間：: 5.3 ns, 3.4 ns

產品類別：: MOSFET

上升時間：: 22.5 ns, 19.6 ns

出廠包裝數量：: 5000

子類別：: MOSFET

典型關斷延遲時間：: 16 ns, 23.2 ns

典型的開啟延遲時間：: 13.4 ns, 8.1 ns

Tags: NTMFS4839NH, NTMFS4839, NTMFS483, NTMFS48, NTMFS4, NTMFS, NTMF, NTM

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTMFS4839NHT3G 描述

***et: Trans MOSFET N-CH 30V 24A 8-Pin SO-FL T/R

***ponent Stockers USA: 15 A 30 V 0.0103 ohm N-CHANNEL Si POWER MOSFET

***r Electronics: Power Field-Effect Transistor, 15A I(D), 30V, 0.0103ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On Resistance, Rds(on):4.3mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.1V ;RoHS Compliant: Yes

***ure Electronics: Single N-Channel 30 V 4.5 mOhm 16 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***ment14 APAC: MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:3.6W

***nell: MOSFET, N-CH, 30V, 79A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 79A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 46W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 79 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 20 / Fall Time ns = 6.6 / Rise Time ns = 25 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 46

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS

***et: Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R

***nell: MOSFET, N-CH, 30V, 82A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 82A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0041ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 54W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET

***emi: Single N−Channel Power MOSFET 30V, 69A, 4.0mΩ

***ical: Trans MOSFET N-CH 30V 31.6A 5-Pin(4+Tab) SO-FL T/R

***ark: TRENCH 6 30V NCH / REEL ROHS COMPLIANT: YES

***nell: MOSFET, N-CH, 30V, 69A, DFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 69A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power

***peria: BUK9M6R6-30E - N-channel 30 V, 6.6 mΩ logic level MOSFET in LFPAK33

***ark: Mosfet, Aec-Q101, N-Ch, 30V, Sot-1210 Rohs Compliant: Yes

***ical: Trans MOSFET N-CH 30V 70A Automotive 8-Pin LFPAK EP T/R

***nell: MOSFET, AEC-Q101, N-CH, 30V, SOT-1210; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0044ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 75W; Transistor Case Style: SOT-1210; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***emi: Power MOSFET 30V 75A 5 mOhm Single N-Channel SO-8FL

***ser: MOSFETs- Power and Small Signal NFET 30V 16A 5MOHM

***et: Trans MOSFET N-CH 30V 16A 8-Pin SO-FL T/R

***r Electronics: Power Field-Effect Transistor, 10A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:16A; On Resistance, Rds(on):3.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***ure Electronics: Single N-Channel 30 V 7.5 mOhm 17 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 80A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:50W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

Market price

型號	製造商	描述	庫存	價格
NTMFS4839NHT3G DISTI # NTMFS4839NHT3G-ND	ON Semiconductor	MOSFET N-CH 30V 9.5A SO-8FL RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Limited Supply - Call
NTMFS4839NHT3G	ON Semiconductor	RoHS: Not Compliant	10000	1000:$0.3200 500:$0.3300 100:$0.3500 25:$0.3600 1:$0.3900
NTMFS4839NHT3G DISTI # 863-NTMFS4839NHT3G	ON Semiconductor	MOSFET NFET S08FL 30V 66A 5.5MO RoHS: Compliant	0

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