IPB64N25S3-20

Mfr. #:: IPB64N25S3-20
製造商:: Infineon Technologies
描述:: IGBT Transistors MOSFET N-Ch 250V 64A D2PAK-2
生命週期:: 製造商新產品
數據表:: IPB64N25S3-20 數據表
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ECAD Model:
更多信息:: IPB64N25S3-20 更多信息

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

系列: IPB64N25

打包: 捲軸

部分別名: IPB64N25S320ATMA1 IPB64N25S320XT SP000876596

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

包裝盒: TO-252-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 300 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 12 ns

上升時間: 20 ns

Id 連續漏極電流: 64 A

Vds-漏-源-擊穿電壓: 250 V

VGS-th-Gate-Source-Threshold-Voltage: 3 V

Rds-On-Drain-Source-Resistance: 20 mOhms

晶體管極性: N通道

典型關斷延遲時間: 45 ns

典型開啟延遲時間: 18 ns

Qg-門電荷: 67 nC

通道模式: 增強

Tags: IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB64N25S3-20 更多信息

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

型號	製造商	描述	庫存	價格
IPB64N25S320ATMA1 DISTI # IPB64N25S320ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 250V 64A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$3.7122
IPB64N25S320ATMA1 DISTI # IPB64N25S320ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 250V 64A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$4.5336 100:$5.5988 10:$6.8280 1:$7.6500
IPB64N25S320ATMA1 DISTI # IPB64N25S320ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 250V 64A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$4.5336 100:$5.5988 10:$6.8280 1:$7.6500
IPB64N25S320ATMA1 DISTI # IPB64N25S320ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB64N25S320ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$3.3900 2000:$3.2900 4000:$3.1900 6000:$3.0900 10000:$2.9900
IPB64N25S320ATMA1 DISTI # SP000876596	Infineon Technologies AG	Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: SP000876596) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€3.0900 2000:€2.9900 4000:€2.9900 6000:€2.7900 10000:€2.6900
IPB64N25S320ATMA1 DISTI # 13AC9030	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 250V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.0175ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power , RoHS Compliant: Yes	0	1:$6.3900 10:$5.4300 25:$5.1900 50:$4.9500 100:$4.7100 250:$4.4600 500:$4.0100
IPB64N25S3-20 DISTI # 726-IPB64N25S3-20	Infineon Technologies AG	MOSFET N-Ch 250V 64A D2PAK-2 RoHS: Compliant	42	1:$6.3900 10:$5.4300 100:$4.7100 250:$4.4600 500:$4.0100 1000:$3.3800
IPB64N25S320ATMA1 DISTI # 726-IPB64N25S320ATMA	Infineon Technologies AG	MOSFET N-Ch 250V 64A D2PAK-2 RoHS: Compliant	0	1:$6.3900 10:$5.4300 100:$4.7100 250:$4.4600 500:$4.0100 1000:$3.3800
IPB64N25S3-20	Infineon Technologies AG	POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB	2206	1819:$1.5750 1112:$1.6500 1:$4.5000
IPB64N25S320ATMA1 DISTI # 1702295	Infineon Technologies AG	MOSFET N-CH 250V 64A OPTIMOS-T D2PAK, RL	1000	1000:£2.3840 2000:£2.3050
IPB64N25S320ATMA1 DISTI # 2725843	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 250V, TO-263 RoHS: Compliant	0	1:£4.4800 10:£4.0000 100:£3.4200 250:£3.2400 500:£2.9900
IPB64N25S320ATMA1 DISTI # 2725843	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 250V, TO-263 RoHS: Compliant	0	1:$12.1100 10:$10.8100 100:$8.8600 500:$7.1800

相關產品

圖片	型號	描述
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	Mfr.#: IPB64N25S320ATMA1 OMO.#: OMO-IPB64N25S320ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 250V 64A TO263-3
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