IPN70R600P7SATMA1

Mfr. #:: IPN70R600P7SATMA1
製造商:: Infineon Technologies
描述:: MOSFET N-CH 700V 8.5A SOT223
生命週期:: 製造商新產品
數據表:: IPN70R600P7SATMA1 數據表
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更多信息:: IPN70R600P7SATMA1 更多信息

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Tags: IPN70, IPN7, IPN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPN70R600P7SATMA1 描述

***ure Electronics: Single N-Channel 700 V 600 mOhm 10.5 nC CoolMOS Power Mosfet - SOT-223

***ical: Trans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) SOT-223 T/R

***i-Key: MOSFET N-CH 700V 8.5A SOT223

***ronik: N-CH 700V 8,5A 600mOhm SOT223

***ark: Mosfet, N-Ch, 700V, 8.5A, 6.9W, Sot-223; Transistor Polarity:n Channel; Continuous Drain Current Id:8.5A; Drain Source Voltage Vds:700V; On Resistance Rds(On):0.49Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 700V, 8.5A, 6.9W, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:8.5A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0.49ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:6.9W; Transistor Case Style:SOT-223; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET CAN N, 700V, 8.5A, 6.9W, SOT-223; Polarità Transistor:Canale N; Corrente Continua di Drain Id:8.5A; Tensione Drain Source Vds:700V; Resistenza di Attivazione Rds(on):0.49ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:6.9W; Modello Case Transistor:SOT-223; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

IPN70R600P7SATMA1 更多信息

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

700V CoolMOS™ P7 MOSFETs: Infineon Technologies 700V CoolMOS™ P7 MOSFETs feature a revolutionary technology for high voltage power MOSFETs. The 700V are designed according to the superjunction (SJ) principle and pioneered by Infineon. The latest 700V CoolMOS P7 are an optimized platform tailored to target cost sensitive applications in consumer markets like chargers, adapters, lighting, TVs and more. The new series provides all the benefits of a fast switching Superjunction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Market price

型號	製造商	描述	庫存	價格
IPN70R600P7SATMA1 DISTI # 32416807	Infineon Technologies AG	IPN70R600P7SATMA1	3000	3000:$0.3787
IPN70R600P7SATMA1 DISTI # IPN70R600P7SATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 700V 8.5A SOT223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3057In Stock	1000:$0.3604 500:$0.4505 100:$0.6081 10:$0.7880 1:$0.9000
IPN70R600P7SATMA1 DISTI # IPN70R600P7SATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 700V 8.5A SOT223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3057In Stock	1000:$0.3604 500:$0.4505 100:$0.6081 10:$0.7880 1:$0.9000
IPN70R600P7SATMA1 DISTI # IPN70R600P7SATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 700V 8.5A SOT223 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	30000:$0.2783 15000:$0.2843 6000:$0.2952 3000:$0.3171
IPN70R600P7SATMA1 DISTI # IPN70R600P7SATMA1	Infineon Technologies AG	CONSUMER - Tape and Reel (Alt: IPN70R600P7SATMA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2859 6000:$0.2759 12000:$0.2659 18000:$0.2569 30000:$0.2519
IPN70R600P7SATMA1 DISTI # SP001657476	Infineon Technologies AG	CONSUMER (Alt: SP001657476) RoHS: Compliant Min Qty: 3000	Europe - 0	3000:€0.3669 6000:€0.2999 12000:€0.2749 18000:€0.2539 30000:€0.2359
IPN70R600P7SATMA1 DISTI # 93AC7122	Infineon Technologies AG	MOSFET, N-CH, 700V, 8.5A, 6.9W, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:700V,On Resistance Rds(on):0.49ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	2960	1000:$0.2550 500:$0.2760 250:$0.2970 100:$0.3180 50:$0.3770 25:$0.4350 10:$0.4940 1:$0.5920
IPN70R600P7SATMA1 DISTI # 726-IPN70R600P7SATMA	Infineon Technologies AG	MOSFET CONSUMER RoHS: Compliant	11572	1:$0.7400 10:$0.6170 100:$0.3980 1000:$0.3190
IPN70R600P7SATMA1	Infineon Technologies AG	Single N-Channel 700 V 600 mOhm 10.5 nC CoolMOS Power Mosfet - SOT-223 RoHS: Not Compliant	3000Reel	3000:$0.2700
IPN70R600P7SATMA1 DISTI # XSFP00000112793	Infineon Technologies AG	RoHS: Compliant	9000 in Stock0 on Order	9000:$0.4909 3000:$0.5400
IPN70R600P7SATMA1 DISTI # 2986474	Infineon Technologies AG	MOSFET, N-CH, 700V, 8.5A, 6.9W, SOT-223 RoHS: Compliant	2960	5000:$0.4300 1000:$0.4400 500:$0.5200 250:$0.5700 100:$0.6100 25:$0.8800 5:$0.9700
IPN70R600P7SATMA1 DISTI # 2986474	Infineon Technologies AG	MOSFET, N-CH, 700V, 8.5A, 6.9W, SOT-223 RoHS: Compliant	2960	500:£0.2930 250:£0.3190 100:£0.3450 25:£0.4940 5:£0.5430