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FCH25N60N

FCH25N60N
Mfr. #:
FCH25N60N
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 600V N-Channel MOSFET SupreMOS
生命週期:
製造商新產品
數據表:
FCH25N60N 數據表
交貨:
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ECAD Model:
更多信息:
FCH25N60N 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-247-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
25 A
Rds On - 漏源電阻：
108 mOhms
最高工作溫度：
+ 150 C
Pd - 功耗：
216 W
配置：
單身的
商品名：
超級MOS
打包：
管子
高度：
20.82 mm
長度：
15.87 mm
系列：
FCH25N60N
晶體管類型：
1 N-Channel
寬度：
4.82 mm
品牌：
安森美半導體/飛兆半導體
產品類別：
MOSFET
出廠包裝數量：
450
子類別：
MOSFET
單位重量：
0.225401 oz
Tags
FCH2, FCH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 25 A, 126 mΩ, TO-247
***Components
N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-247 ON Semiconductor FCH25N60N
***ical
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247 Tube
***ark
MOSFET, N CH, 600V, 25A, TO-247
***i-Key
MOSFET N-CH 600V 25A TO-247
***nell
MOSFET, N CH, 600V, 25A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.108ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:216W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; Pulse Current Idm:75A
***ment14 APAC
MOSFET, N CH, 600V, 25A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.108ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:216W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:75A
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
N-Channel SupreMOS MOSFETs, FRFET
ON Semiconductor N-Channel SupreMOS MOSFETs, FRFET are ON Semiconductor's next generation of high voltage super-junction MOSFETs, employing a deep trench filling process that differentiates them from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. These ON Semiconductor N-Channel SupreMOS MOSFETs fit the industry's AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
型號 製造商 描述 庫存 價格
FCH25N60N
DISTI # FCH25N60N-ND		ON SemiconductorMOSFET N-CH 600V 25A TO-247
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$3.9153
FCH25N60N
DISTI # FCH25N60N		ON SemiconductorTrans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: FCH25N60N)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$2.4900
  • 900:$2.3900
  • 1800:$2.3900
  • 2700:$2.3900
  • 4500:$2.2900
FCH25N60N
DISTI # 88T3230		ON SemiconductorMOSFET Transistor, N Channel, 25 A, 600 V, 0.108 ohm, 10 V, 2 V RoHS Compliant: Yes147
  • 1:$5.9100
FCH25N60NFairchild Semiconductor CorporationPower Field-Effect Transistor, 25A I(D), 600V, 0.126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
RoHS: Compliant		7407
  • 1000:$4.6200
  • 500:$4.8600
  • 100:$5.0600
  • 25:$5.2800
  • 1:$5.6800
FCH25N60N
DISTI # 512-FCH25N60N		ON SemiconductorMOSFET 600V N-Channel MOSFET SupreMOS
RoHS: Compliant		0
  • 1:$5.0900
  • 10:$4.3200
  • 100:$3.7500
  • 250:$3.5600
FCH25N60N
DISTI # 7599443P		ON SemiconductorMOSFET N-CHANNEL 600V 25A SUPREMOS TO247, TU430
  • 10:£5.9300
  • 50:£5.4200
  • 150:£4.9100
  • 300:£4.5100
FCH25N60N
DISTI # 2083214		ON SemiconductorMOSFET, N CH, 600V, 25A, TO-247
RoHS: Compliant		177
  • 100:£4.5100
  • 50:£5.3500
  • 10:£6.1800
  • 5:£6.8800
  • 1:£7.4400
FCH25N60N
DISTI # 2083214		ON SemiconductorMOSFET, N CH, 600V, 25A, TO-247
RoHS: Compliant		147
  • 900:$7.9300
  • 450:$9.4300
  • 10:$12.4800
  • 1:$13.8800
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可用性
庫存:
450
訂購:
2433
輸入數量:
FCH25N60N的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$5.47
US$5.47
10
US$4.65
US$46.50
100
US$4.03
US$403.00
250
US$3.82
US$955.00
500
US$3.43
US$1 715.00
1000
US$2.89
US$2 890.00
2500
US$2.75
US$6 875.00
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