SI2309DS-T1-E3

SI2309DS-T1-E3
Mfr. #:
SI2309DS-T1-E3
製造商:
Vishay / Siliconix
描述:
MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
生命週期:
製造商新產品
數據表:
SI2309DS-T1-E3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2309DS-T1-E3 DatasheetSI2309DS-T1-E3 Datasheet (P4-P5)
ECAD Model:
產品屬性
屬性值
製造商:
威世
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
SOT-23-3
商品名:
溝槽場效應晶體管
打包:
捲軸
高度:
1.45 mm
長度:
2.9 mm
系列:
SI2
寬度:
1.6 mm
品牌:
威世 / Siliconix
產品類別:
MOSFET
出廠包裝數量:
3000
子類別:
MOSFET
第 # 部分別名:
SI2309DS-E3
單位重量:
0.000282 oz
Tags
SI2309DS-T1, SI2309DS-T, SI2309D, SI2309, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***C
Trans MOSFET P-CH 60V 1.25A 3-Pin SOT-23 Trans MOSFET P-CH 60V 1.25A 3-Pin SOT-23
***ied Electronics & Automation
MOSFET, Power,P-Ch,VDSS -60V,RDS(ON) 0.275Ohm,ID -1.25A,TO-236 (SOT-23),PD 1.25W
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:-1.25A; On Resistance, Rds(on):0.55ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:SOT-23 ;RoHS Compliant: Yes
***nell
MOSFET, P REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-60V; Current, Id Cont:1.25A; Resistance, Rds On:0.34ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:8A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:1.25W; Power, Pd:1.25W; Quantity, Reel:3000; Resistance, Rds on Max:0.34ohm; SMD Marking:A9; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Voltage, Vgs th Max:-1V; Width, External:3.05mm; Width, Tape:8mm
型號 製造商 描述 庫存 價格
SI2309DS-T1-E3
DISTI # SI2309DS-T1-E3TR-ND
Vishay SiliconixMOSFET P-CH 60V 1.25A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI2309DS-T1-E3
    DISTI # SI2309DS-T1-E3CT-ND
    Vishay SiliconixMOSFET P-CH 60V 1.25A SOT23-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI2309DS-T1-E3
      DISTI # SI2309DS-T1-E3DKR-ND
      Vishay SiliconixMOSFET P-CH 60V 1.25A SOT23-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI2309DS-T1-E3
        DISTI # 70026067
        Vishay SiliconixMOSFET,Power,P-Ch,VDSS -60V,RDS(ON) 0.275Ohm,ID -1.25A,TO-236 (SOT-23),PD 1.25W
        RoHS: Compliant
        0
        • 1:$0.6200
        • 100:$0.5900
        • 250:$0.5600
        • 500:$0.5300
        • 1000:$0.5100
        SI2309DS-T1-E3
        DISTI # 781-SI2309DS-E3
        Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
        RoHS: Compliant
        0
          SI2309DS-T1
          DISTI # 781-SI2309DS
          Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
          RoHS: Not compliant
          0
            圖片 型號 描述
            SI2309DS

            Mfr.#: SI2309DS

            OMO.#: OMO-SI2309DS

            MOSFET Plastic-Encapsulated MOSFET P-CH-60V
            SI2309DS-T1-E3

            Mfr.#: SI2309DS-T1-E3

            OMO.#: OMO-SI2309DS-T1-E3

            MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
            SI2309DS

            Mfr.#: SI2309DS

            OMO.#: OMO-SI2309DS-1190

            MOSFET Plastic-Encapsulated MOSFET P-CH-60V
            SI2309DS , M1MA151KT2

            Mfr.#: SI2309DS , M1MA151KT2

            OMO.#: OMO-SI2309DS-M1MA151KT2-1190

            全新原裝
            SI2309DS-T1

            Mfr.#: SI2309DS-T1

            OMO.#: OMO-SI2309DS-T1-1190

            MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
            SI2309DS-T1-E3

            Mfr.#: SI2309DS-T1-E3

            OMO.#: OMO-SI2309DS-T1-E3-VISHAY

            MOSFET P-CH 60V 1.25A SOT23-3
            SI2309DS-T1-GE3

            Mfr.#: SI2309DS-T1-GE3

            OMO.#: OMO-SI2309DS-T1-GE3-1190

            P CH MOSFET, Transistor Polarity:P Channel, Continuous Drain Current Id:-1.25A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):275mohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs
            SI2309DS-TI

            Mfr.#: SI2309DS-TI

            OMO.#: OMO-SI2309DS-TI-1190

            全新原裝
            SI2309DS-TI-E3

            Mfr.#: SI2309DS-TI-E3

            OMO.#: OMO-SI2309DS-TI-E3-1190

            全新原裝
            SI2309DST1

            Mfr.#: SI2309DST1

            OMO.#: OMO-SI2309DST1-1190

            Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
            可用性
            庫存:
            Available
            訂購:
            5500
            輸入數量:
            SI2309DS-T1-E3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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