TGF2954

TGF2954
Mfr. #:
TGF2954
製造商:
Qorvo
描述:
RF JFET Transistors DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm
生命週期:
製造商新產品
數據表:
TGF2954 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
TGF2954 更多信息
產品屬性
屬性值
製造商:
克里公司
產品分類:
射頻 JFET 晶體管
RoHS:
Y
晶體管類型:
HEMT
技術:
氮化鎵
獲得:
18.6 dB
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
150 V
Vgs - 柵源擊穿電壓:
- 10 V to 2 V
Id - 連續漏極電流:
18 A
輸出功率:
330 W
最大漏柵電壓:
-
最低工作溫度:
- 40 C
最高工作溫度:
+ 130 C
Pd - 功耗:
-
安裝方式:
螺絲安裝
包裝/案例:
440162
打包:
管子
應用:
-
配置:
單身的
高度:
3.78 mm
長度:
20.45 mm
工作頻率:
1.2 GHz to 1.4 GHz
工作溫度範圍:
-
產品:
氮化鎵 HEMT
寬度:
10.29 mm
品牌:
Wolfspeed / 克里
正向跨導 - 最小值:
-
柵源截止電壓:
-
班級:
-
開發套件:
CGHV14250F-TB
秋季時間:
-
NF - 噪聲係數:
-
P1dB - 壓縮點:
-
產品類別:
射頻 JFET 晶體管
Rds On - 漏源電阻:
-
上升時間:
-
出廠包裝數量:
50
子類別:
晶體管
典型關斷延遲時間:
-
Vgs th - 柵源閾值電壓:
- 3 V
Tags
TGF295, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 12 GHz, 27 W, 19.6 dB, 32 V, GaN, DIE
TGF GaN on SiC Transistors
Qorvo TGF GaN on SiC Transistors for the Satellite, P to P, and Military communications along with Marine radar and Test and instrumentation. These are small footprint (dies) that handle high power (7W to 70W) and high frequency, up to 14GHz.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型號 製造商 描述 庫存 價格
TGF2954
DISTI # 772-TGF2954
QorvoRF JFET Transistors DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm
RoHS: Compliant
4
  • 1:$69.3000
  • 25:$59.9400
  • 100:$51.8400
1112246
DISTI # TGF2954
QorvoRF POWER TRANSISTOR
RoHS: Compliant
0
  • 1:$6.4000
圖片 型號 描述
TGF2957

Mfr.#: TGF2957

OMO.#: OMO-TGF2957

RF JFET Transistors DC-12GHz 70W 32V GaN P3dB @ 3GHz 48.6dBm
TGF2954

Mfr.#: TGF2954

OMO.#: OMO-TGF2954

RF JFET Transistors DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm
TGF2819-FS

Mfr.#: TGF2819-FS

OMO.#: OMO-TGF2819-FS-318

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2955

Mfr.#: TGF2955

OMO.#: OMO-TGF2955-318

RF JFET Transistors DC-12GHz 40W 32V GaN P3dB @ 3GHz 46.5dBm
TGF148-1000Z

Mfr.#: TGF148-1000Z

OMO.#: OMO-TGF148-1000Z-1190

全新原裝
TGF3505C06

Mfr.#: TGF3505C06

OMO.#: OMO-TGF3505C06-1190

全新原裝
TGF60-07870787-039

Mfr.#: TGF60-07870787-039

OMO.#: OMO-TGF60-07870787-039-LEADER-TECH

THERMAL GAP FILLER, 200X200X1MM, GREY
TGF-12B09-01SA

Mfr.#: TGF-12B09-01SA

OMO.#: OMO-TGF-12B09-01SA-1190

MIL-C-38999 SERIES III SCOOP PROOF THREADED - Bulk (Alt: TGF-12B09-01SA)
TGF-R-5309-10

Mfr.#: TGF-R-5309-10

OMO.#: OMO-TGF-R-5309-10-1190

D8 - CONNECTOR, ACCESS
TGFSB

Mfr.#: TGFSB

OMO.#: OMO-TGFSB-PANDUIT

TG FIBER SPOOL BRACKET
可用性
庫存:
Available
訂購:
1987
輸入數量:
TGF2954的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$69.30
US$69.30
25
US$59.94
US$1 498.50
100
US$51.84
US$5 184.00
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