CGHV1F025S

Mfr. #:: CGHV1F025S
製造商:: N/A
描述:: RF MOSFET HEMT 40V 12DFN
生命週期:: 製造商新產品
數據表:: CGHV1F025S 數據表
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ECAD Model:
更多信息:: CGHV1F025S 更多信息

產品屬性
屬性值

製造商: Wolfspeed / 克里

產品分類: 晶體管 - FET、MOSFET - 單

打包: 捲軸

安裝方式: 貼片/貼片

工作溫度範圍: - 40 C to + 150 C

包裝盒: DFN-12

技術: 氮化鎵碳化矽

配置: 單身的

晶體管型: HEMT

獲得: 11 dB

班級: -

輸出功率: 25 W

鈀功耗: -

最高工作溫度: + 150 C

最低工作溫度: - 40 C

應用: -

工作頻率: 15 GHz

Id 連續漏極電流: 2 A

Vds-漏-源-擊穿電壓: 100 V

VGS-th-Gate-Source-Threshold-Voltage: - 3 V

Rds-On-Drain-Source-Resistance: -

晶體管極性: N通道

正向跨導最小值: -

開發套件: CGHV1F025S-TB

VGS-柵極-源極擊穿電壓: - 10 V to + 2 V

柵源截止電壓: -

最大漏柵電壓: -

NF-噪聲係數: -

P1dB-壓縮點: -

Tags: CGHV1F, CGHV1, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV1F025S 描述

***i-Key: RF MOSFET HEMT 40V 12DFN

***hardson RFPD: RF POWER TRANSISTOR

CGHV1F025S 更多信息

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

X-Band GaN HEMTs & MMICs: Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More

Market price

型號	製造商	描述	庫存	價格
CGHV1F025S-AMP1 DISTI # CGHV1F025S-AMP1-ND	Wolfspeed	DEMO HEMT TRANS AMP1 CGHV1F025S RoHS: Compliant Min Qty: 1 Container: Bulk	1In Stock	1:$637.4400
CGHV1F025S DISTI # CGHV1F025STR-ND	Wolfspeed	RF MOSFET HEMT 40V 12DFN RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	Temporarily Out of Stock	250:$87.4405
CGHV1F025S DISTI # CGHV1F025SCT-ND	Wolfspeed	RF MOSFET HEMT 40V 12DFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	100:$96.1846 1:$97.9300
CGHV1F025S DISTI # CGHV1F025SDKR-ND	Wolfspeed	RF MOSFET HEMT 40V 12DFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	100:$96.1846 1:$97.9300
CGHV1F025S DISTI # 941-CGHV1F025S	Cree, Inc.	RF JFET Transistors GaN HEMT DC-15GHz, 25 Watt RoHS: Compliant	0	1:$87.4400
CGHV1F025S-AMP1 DISTI # 941-CGHV1F025S-AMP1	Cree, Inc.	RF Development Tools Test Board with GaN HEMT RoHS: Compliant	1	1:$637.4400

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