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IRGB20B60PD1PBF

IRGB20B60PD1PBF
Mfr. #:
IRGB20B60PD1PBF
製造商:
Infineon Technologies
描述:
IGBT Transistors 600V Warp2 150kHz
生命週期:
製造商新產品
數據表:
IRGB20B60PD1PBF 數據表
交貨:
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HTML Datasheet:
IRGB20B60PD1PBF DatasheetIRGB20B60PD1PBF Datasheet (P4-P6)IRGB20B60PD1PBF Datasheet (P7-P9)IRGB20B60PD1PBF Datasheet (P10-P11)
ECAD Model:
更多信息:
IRGB20B60PD1PBF 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-220-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
集電極-發射極飽和電壓：
2.05 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
40 A
Pd - 功耗：
215 W
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
打包：
管子
連續集電極電流 Ic 最大值：
40 A
高度：
8.77 mm
長度：
10.54 mm
寬度：
4.69 mm
品牌：
英飛凌科技
柵極-發射極漏電流：
100 nA
產品類別：
IGBT晶體管
出廠包裝數量：
1000
子類別：
IGBT
第 # 部分別名：
SP001548090
單位重量：
0.211644 oz
Tags
IRGB20B60PD1, IRGB2, IRGB, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
IRGB20B60PD1PBF Series 600 V 22 A N-Channel UltraFast IGBT - TO-220AB, TO220COPAK-3, RoHS
***et
Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB
*** Stop Electro
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, 600V, 40A, TO-220AB; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.35V; Power Dissipation Pd:215W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Package / Case:TO-220AB; Power Dissipation Max:215W; Power Dissipation Pd:215W; Power Dissipation Pd:215W; Pulsed Current Icm:80A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
***ure Electronics
IRG4BC40WPBF Series 600 V 20 A N-Channel Latest Generation IGBT - TO-220AB
***ineon
Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine
*** Stop Electro
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, TO-220; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur
***ment14 APAC
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Fall Time Max:74ns; Fall Time tf:74ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
*** Electronics
IGBT IRG4BC40UPBF IGBT 600V 40A 160W Through Hole TO-220AB 20A/600V TO-220AB
***p One Stop
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
***ure Electronics
IRG4BC40UPbF Series 600 V 20 A N-Channel Ultrafast Speed IGBT - TO-220AB
***ineon
Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine
***itex
Transistor; IGBT; 600V; 40A; 160W; -55+150 deg.C; THT; TO220
***roFlash
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Device Marking:IRG4BC40UPBF; Fall Time tf:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:19ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 49A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***eco
Transistor IGBT Chip Negative Channel 600 Volt 49A 3-Pin(3+Tab) TO-220AB
***ure Electronics
IRG4BC40FPbF Series 600 V 27 A N-Channel Fast Speed IGBT - TO-220AB
***ineon SCT
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
*** Stop Electro
Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 170 ns Power dissipation: 160 W
***ment14 APAC
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:49A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:49A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:200A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
*** Source Electronics
Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 34A 125W TO220AB
***ure Electronics
HGTP7N60A4 Series 600 V 34 A Flange Mount SMPS N-Channel IGBT-TO-220AB
***r Electronics
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, N, TO-220; Transistor Type:IGBT; DC Collector Current:34A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:34A; Current Temperature:25°C; Fall Time tf:45ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:GCE; Power Dissipation Max:125W; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulsed Current Icm:56A; Rise Time:11ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***rchild Semiconductor
The HGTP7N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
型號 製造商 描述 庫存 價格
IRGB20B60PD1PBF
DISTI # IRGB20B60PD1PBF-ND		Infineon Technologies AGIGBT 600V 40A 215W TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		1458In Stock
  • 1000:$1.7267
  • 500:$2.0473
  • 100:$2.4050
  • 10:$2.9350
  • 1:$3.2700
IRGB20B60PD1PBF
DISTI # IRGB20B60PD1PBF		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRGB20B60PD1PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 187
  • 1:$2.0900
  • 10:$1.8900
  • 25:$1.8900
  • 50:$1.8900
  • 100:$1.5900
  • 500:$1.3900
  • 1000:$1.3900
IRGB20B60PD1PBF
DISTI # SP001548090		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB (Alt: SP001548090)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.7900
  • 10:€1.5900
  • 25:€1.4900
  • 50:€1.3900
  • 100:€1.2900
  • 500:€1.2900
  • 1000:€1.1900
IRGB20B60PD1PBF
DISTI # 63J7440		Infineon Technologies AGSINGLE IGBT, 600V, 40A,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:215W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes115
  • 500:$1.9500
  • 250:$2.1800
  • 100:$2.3000
  • 50:$2.4200
  • 25:$2.5300
  • 10:$2.6500
  • 1:$3.1100
IRGB20B60PD1PBF.
DISTI # 29AC7086		Infineon Technologies AGINDUSTRY 59 ROHS COMPLIANT: YES0
  • 500:$1.9500
  • 250:$2.1800
  • 100:$2.3000
  • 50:$2.4200
  • 25:$2.5800
  • 10:$2.7000
  • 1:$3.1700
IRGB20B60PD1PBF
DISTI # 70017558		Infineon Technologies AGIGBT with Ultrafast Soft Recovery Diode,600 V,13 A,TO-220AB
RoHS: Compliant		0
  • 5:$5.2500
IRGB20B60PD1PBFInfineon Technologies AGIRGB20B60PD1PBF Series 600 V 22 A N-Channel UltraFast IGBT - TO-220AB
RoHS: Compliant		3075Tube
  • 10:$1.9500
  • 300:$1.7100
IRGB20B60PD1PBF
DISTI # 942-IRGB20B60PD1PBF		Infineon Technologies AGIGBT Transistors 600V Warp2 150kHz
RoHS: Compliant		1695
  • 1:$3.1100
  • 10:$2.6500
  • 100:$2.3000
  • 250:$2.1800
  • 500:$1.9500
  • 1000:$1.6500
IRGB20B60PD1PBFInternational Rectifier 42
  • 26:$2.7800
  • 8:$3.0580
  • 1:$4.1700
IRGB20B60PD1PBF
DISTI # 6503533		Infineon Technologies AGTRANSISTOR IGBT N-CH 600V 40A TO220AB, PK780
  • 25:£1.9660
  • 5:£2.1860
IRGB20B60PD1PBF
DISTI # IRGB20B60PD1PBF		Infineon Technologies AGTransistor: IGBT,600V,40A,215W,TO220AB56
  • 1:$4.1700
  • 3:$3.7400
  • 10:$3.1000
  • 50:$2.6500
IRGB20B60PD1PBF
DISTI # 8659583		Infineon Technologies AGIGBT, 600V, 40A, TO-220AB
RoHS: Compliant		913
  • 1000:$2.6200
  • 500:$3.0900
  • 250:$3.4600
  • 100:$3.6500
  • 10:$4.1900
  • 1:$4.9300
IRGB20B60PD1PBF
DISTI # 8659583		Infineon Technologies AGIGBT, 600V, 40A, TO-220AB
RoHS: Compliant		853
  • 500:£1.2900
  • 250:£1.4400
  • 100:£1.6000
  • 10:£1.7500
  • 1:£2.2300
IRGB20B60PD1PBF
DISTI # XSFP00000050570		Infineon Technologies AG 
RoHS: Compliant		2500
  • 2500:$2.4400
  • 100:$2.6000
圖片 型號 描述
IRS20957STRPBF

Mfr.#: IRS20957STRPBF

OMO.#: OMO-IRS20957STRPBF

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FAN7380MX-OP

Mfr.#: FAN7380MX-OP

OMO.#: OMO-FAN7380MX-OP

 Gate Drivers HalfbridgeGateDriver
FAN7380MX

Mfr.#: FAN7380MX

OMO.#: OMO-FAN7380MX

 Gate Drivers Half Bridge Gate Dvr
MC34152DG

Mfr.#: MC34152DG

OMO.#: OMO-MC34152DG

 Gate Drivers 1.5A High Speed Dual Non-Inverting MOSFET
KSC3265YMTF

Mfr.#: KSC3265YMTF

OMO.#: OMO-KSC3265YMTF

 Bipolar Transistors - BJT NPN Epitaxial Transistor
KSA1298YMTF

Mfr.#: KSA1298YMTF

OMO.#: OMO-KSA1298YMTF

 Bipolar Transistors - BJT PNP Epitaxial Transistor
IRFB4227PBF

Mfr.#: IRFB4227PBF

OMO.#: OMO-IRFB4227PBF

 MOSFET MOSFT 200V 65A 26mOhm 70nC Qg
LNK302DN

Mfr.#: LNK302DN

OMO.#: OMO-LNK302DN

 AC/DC Converters 63 mA (MDCM) 80 mA (CCM)
FQP30N06

Mfr.#: FQP30N06

OMO.#: OMO-FQP30N06

 MOSFET 60V N-Channel QFET
TL494CDR

Mfr.#: TL494CDR

OMO.#: OMO-TL494CDR

 Switching Controllers PWM Controller
可用性
庫存:
832
訂購:
2815
輸入數量:
IRGB20B60PD1PBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$3.11
US$3.11
10
US$2.64
US$26.40
100
US$2.29
US$229.00
250
US$2.17
US$542.50
500
US$1.95
US$975.00
1000
US$1.64
US$1 640.00
2000
US$1.56
US$3 120.00
5000
US$1.50
US$7 500.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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