IPD60R380P6ATMA1

Mfr. #:: IPD60R380P6ATMA1
製造商:: Infineon Technologies
描述:: RF Bipolar Transistors MOSFET N-Ch 600V 10.6A DPAK-2
生命週期:: 製造商新產品
數據表:: IPD60R380P6ATMA1 數據表
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更多信息:: IPD60R380P6ATMA1 更多信息

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

打包: 捲軸

部分別名: IPD60R380P6 SP001135814

商品名: 酷摩

包裝盒: TO-252-3

技術: 矽

通道數: 1 Channel

晶體管型: 1 N-Channel

Vds-漏-源-擊穿電壓: 600 V

晶體管極性: N通道

Tags: IPD60R380P, IPD60R380, IPD60R38, IPD60R3, IPD60R, IPD60, IPD6, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD60R380P6ATMA1 描述

***ark: MOSFET Transistor, N Channel, 10.6 A, 600 V, 0.342 ohm, 10 V, 4 V

***ure Electronics: N-Channel 6000 V 380 mOhm 19 nC CoolMOS P6 Power Transistor - DPAK-3

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO252-3, RoHS

***nell: MOSFET, N-CH, 600V, 10.6A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.342ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

IPD60R380P6ATMA1 更多信息

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

型號	製造商	描述	庫存	價格
IPD60R380P6ATMA1 DISTI # V72:2272_06383827	Infineon Technologies AG	Trans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	1:$0.7549
IPD60R380P6ATMA1 DISTI # V36:1790_06383827	Infineon Technologies AG	Trans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0	2500:$0.7213
IPD60R380P6ATMA1 DISTI # IPD60R380P6ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V DPAK-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	12500:$0.7120 5000:$0.7273 2500:$0.7553
IPD60R380P6ATMA1 DISTI # IPD60R380P6ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V DPAK-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.8356 500:$1.0084 100:$1.2274 10:$1.5270 1:$1.7000
IPD60R380P6ATMA1 DISTI # IPD60R380P6ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V DPAK-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.8356 500:$1.0084 100:$1.2274 10:$1.5270 1:$1.7000
IPD60R380P6ATMA1 DISTI # IPD60R380P6ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 10.6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R380P6ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.6459 15000:$0.6569 10000:$0.6799 5000:$0.7059 2500:$0.7319
IPD60R380P6ATMA1 DISTI # SP001135814	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 10.6A 3-Pin TO-252 T/R (Alt: SP001135814) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.6049 15000:€0.6509 10000:€0.7049 5000:€0.7699 2500:€0.9409
IPD60R380P6ATMA1 DISTI # 34AC1680	Infineon Technologies AG	MOSFET, N-CH, 600V, 10.6A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:10.6A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.342ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	0	1000:$0.7450 500:$0.9000 250:$0.9600 100:$1.0200 50:$1.1100 25:$1.2000 10:$1.2800 1:$1.5000
IPD60R380P6ATMA1 DISTI # 726-IPD60R380P6ATMA1	Infineon Technologies AG	MOSFET N-Ch 600V 10.6A DPAK-2 RoHS: Compliant	135	1:$1.4900 10:$1.2700 100:$1.0100 500:$0.8910 1000:$0.7380
IPD60R380P6ATMA1 DISTI # 2781169	Infineon Technologies AG	MOSFET, N-CH, 600V, 10.6A, TO-252 RoHS: Compliant	0	5000:$1.0400 1000:$1.1000 500:$1.1600 250:$1.3400 100:$1.5900 25:$1.9400 5:$2.2300
IPD60R380P6ATMA1 DISTI # 2781169	Infineon Technologies AG	MOSFET, N-CH, 600V, 10.6A, TO-252	0	100:£0.9730 25:£1.2200 5:£1.3500

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