IRFHM830DTRPBF

Mfr. #:: IRFHM830DTRPBF
製造商:: Infineon Technologies
描述:: Darlington Transistors MOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG
生命週期:: 製造商新產品
數據表:: IRFHM830DTRPBF 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 國際整流器

產品分類: 晶體管 - FET、MOSFET - 單

打包: 捲軸

安裝方式: 貼片/貼片

包裝盒: PQFN-8

技術: 矽

通道數: 1 Channel

配置: 單四漏三源

晶體管型: 1 N-Channel

鈀功耗: 2.8 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 6.7 ns

上升時間: 20 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 20 A

Vds-漏-源-擊穿電壓: 30 V

VGS-th-Gate-Source-Threshold-Voltage: 1.8 V

Rds-On-Drain-Source-Resistance: 5.7 mOhms

晶體管極性: N通道

典型關斷延遲時間: 9.1 ns

典型開啟延遲時間: 9.8 ns

Qg-門電荷: 13 nC

正向跨導最小值: 69 S

通道模式: 增強

Tags: IRFHM830DT, IRFHM830D, IRFHM830, IRFHM83, IRFHM8, IRFHM, IRFH, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFHM830DTRPBF 描述

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS

***(Formerly Allied Electronics): MOSFET, 30V, 40A, 4.3 MOHM, 13 NC QG, 1.1 OHM RG, MONOFETKY, PQFN 3.3X3.3

***ment14 APAC: MOSFET,N CH,SCH DIODE,30V,20A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):3400µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Power Dissipation Pd:2.8W; Voltage Vgs Max:20V

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Schottky intrinsic diode with low forward voltage; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***ure Electronics: Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS

***Yang: Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R - Tape and Reel

***nell: MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V

***ineon: Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***ernational Rectifier: 25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package

***(Formerly Allied Electronics): MOSFET, 25V, 51A, 6 mOhm, 7 nC Qg, Low Rg, PQFN

***ment14 APAC: MOSFET, N CH, 25V, 51A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:26W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:51A; Power Dissipation Pd:26W; Voltage Vgs Max:20V

*** Electronics: INFINEON IRLHM630TRPBF MOSFET Transistor, N Channel, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS

***roFlash: Single N-Channel 20 V 4.5 mOhm 41 nC HEXFET¬Æ Power Mosfet - PQFN 3.3 x 3.3 mm

*** Source Electronics: Battery Operated DC Motor Inverter MOSFET | MOSFET N-CH 30V 21A PQFN

***Yang: Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R - Tape and Reel

***nell: MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2800µohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:12V

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Operated Drive; Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 12 / Fall Time ns = 43 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 9.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 37

Market price

型號	製造商	描述	庫存	價格
IRFHM830DTRPBF DISTI # V72:2272_13891074	Infineon Technologies AG	Trans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R RoHS: Compliant	1703	75000:$0.5489 30000:$0.5491 15000:$0.5499 6000:$0.5558 3000:$0.5616 1000:$0.5633 500:$0.5860 250:$0.6596 100:$0.7208 50:$0.7680 25:$0.8785 10:$0.9017 1:$1.0073
IRFHM830DTRPBF DISTI # IRFHM830DTRPBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 20A PQFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Limited Supply - Call
IRFHM830DTRPBF DISTI # 26196361	Infineon Technologies AG	Trans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R RoHS: Compliant	1703	1000:$0.5633 500:$0.5860 250:$0.6596 100:$0.7208 50:$0.7680 25:$0.8785 14:$0.9017
IRFHM830DTRPBF DISTI # 70019948	Infineon Technologies AG	MOSFET,30V,40A,4.3 MOHM,13 NC QG,1.1 OHM RG,MONOFETKY,PQFN 3.3X3.3 RoHS: Compliant	0	4000:$1.5400 8000:$1.5090 20000:$1.4630 40000:$1.4010 100000:$1.3090
IRFHM830DTRPBF DISTI # 942-IRFHM830DTRPBF	Infineon Technologies AG	MOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG RoHS: Compliant	0
IRFHM830DTRPBF	International Rectifier		576	501:$1.0712 232:$1.2010 1:$2.5968
IRFHM830DTRPBF DISTI # 1857345	Infineon Technologies AG	MOSFET,N CH,SCH DIODE,30V,20A,PQFN33 RoHS: Compliant	0	1:$1.9100 10:$1.6100 100:$1.2500 500:$1.1100 1000:$0.9440
IRFHM830DTRPBF DISTI # C1S322000595279	Infineon Technologies AG	Trans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R RoHS: Compliant	1703	100:$0.7208 50:$0.7680 25:$0.8785 10:$0.9017

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