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IGP40N65H5XKSA1

IGP40N65H5XKSA1
Mfr. #:
IGP40N65H5XKSA1
製造商:
Infineon Technologies
描述:
IGBT Transistors IGBT PRODUCTS
生命週期:
製造商新產品
數據表:
IGP40N65H5XKSA1 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
IGP40N65H5XKSA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-220-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
650 V
集電極-發射極飽和電壓：
1.65 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
74 A
Pd - 功耗：
250 W
最低工作溫度：
- 40 C
最高工作溫度：
+ 175 C
系列：
TRENCHSTOP 5 H5
打包：
管子
品牌：
英飛凌科技
柵極-發射極漏電流：
100 nA
產品類別：
IGBT晶體管
出廠包裝數量：
500
子類別：
IGBT
商品名：
戰壕
第 # 部分別名：
IGP40N65H5 SP001001738
單位重量：
0.070548 oz
Tags
IGP40N65H, IGP4, IGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 74A 3-Pin TO-220 Tube
***ronik
IGBT 650V 40A 1,65V TO220-3
***ark
IGBT, 650V, 40A, TO220-3
***i-Key
IGBT 650V 74A 255W PG-TO247-3
***ukat
650V 74A 255W TO220
***ment14 APAC
Prices include import duty and tax. IGBT, 650V, 40A, TO220-3; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:255W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Transistor Type:IGBT
***nell
IGBT, 650V, 40A, TO220-3; Corrente di Collettore CC:40A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:255W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-40°C; Tipo di Transistor:IGBT
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
型號 製造商 描述 庫存 價格
IGP40N65H5XKSA1
DISTI # IGP40N65H5XKSA1-ND		Infineon Technologies AGIGBT 650V 74A 255W PG-TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		88In Stock
  • 10:$2.7550
  • 1:$3.0700
IGP40N65H5XKSA1
DISTI # IGP40N65H5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 3-Pin TO-220 Tube - Rail/Tube (Alt: IGP40N65H5XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$1.4900
  • 1000:$1.4900
  • 2000:$1.3900
  • 3000:$1.3900
  • 5000:$1.3900
IGP40N65H5XKSA1
DISTI # SP001001738		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 3-Pin TO-220 Tube (Alt: SP001001738)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.6900
  • 10:€1.4900
  • 25:€1.3900
  • 50:€1.2900
  • 100:€1.2900
  • 500:€1.1900
  • 1000:€1.1900
IGP40N65H5XKSA1
DISTI # 33X0398		Infineon Technologies AGIGBT Single Transistor, 40 A, 1.65 V, 255 W, 650 V, TO-220, 3 , RoHS Compliant: Yes280
  • 1:$2.9000
  • 10:$2.4600
  • 100:$1.9700
  • 500:$1.7200
  • 1000:$1.4300
  • 2500:$1.3300
  • 5000:$1.2800
IGP40N65H5XKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel
RoHS: Compliant		900
  • 1000:$1.3400
  • 500:$1.4100
  • 100:$1.4700
  • 25:$1.5300
  • 1:$1.6500
IGP40N65H5
DISTI # 726-IGP40N65H5-ES		Infineon Technologies AGIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
RoHS: Compliant		983
  • 1:$2.9200
  • 10:$2.4900
  • 100:$2.1600
  • 250:$2.0400
  • 500:$1.8400
IGP40N65H5XKSA1
DISTI # 726-IGP40N65H5XKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		911
  • 1:$2.9000
  • 10:$2.4600
  • 100:$1.9700
  • 500:$1.7200
IGP40N65H5XKSA1
DISTI # IGP40N65H5XKSA1		Infineon Technologies AGTransistor: IGBT,650V,74A,250W,TO220-3,Series: H5135
  • 1:$2.5800
  • 5:$2.2300
  • 25:$1.7900
  • 100:$1.6600
IGP40N65H5XKSA1
DISTI # IGP40N65H5		Infineon Technologies AG650V 74A 255W TO220
RoHS: Compliant		419
  • 1:€5.4500
  • 10:€2.4500
  • 50:€1.4500
  • 100:€1.3300
IGP40N65H5XKSA1
DISTI # 2363275		Infineon Technologies AGIGBT, 650V, 40A, TO220-3
RoHS: Compliant		280
  • 1:£2.7800
  • 10:£2.0900
  • 100:£1.6700
  • 250:£1.5700
  • 500:£1.4600
圖片 型號 描述
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Mfr.#: IR2110PBF

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SFV6R-3STE1HLF

Mfr.#: SFV6R-3STE1HLF

OMO.#: OMO-SFV6R-3STE1HLF

 FFC & FPC Connectors 6P R/A SMT FFC/FPC 0.5mm CONT SPACING
SFV6R-3STE1HLF

Mfr.#: SFV6R-3STE1HLF

OMO.#: OMO-SFV6R-3STE1HLF-AMPHENOL-ICC

 FFC & FPC Connectors 6P R/A SMT FFC/FPC 0.5mm CONT SPACING
IR2110PBF

Mfr.#: IR2110PBF

OMO.#: OMO-IR2110PBF-INFINEON-TECHNOLOGIES

 Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
B41231A9478M000

Mfr.#: B41231A9478M000

OMO.#: OMO-B41231A9478M000-EPCOS

 Aluminum Electrolytic Capacitors - Snap In 4700UF 100V 30X50 SNAP IN
STGW40V60DF

Mfr.#: STGW40V60DF

OMO.#: OMO-STGW40V60DF-STMICROELECTRONICS

 IGBT 600V 80A 283W TO247
RFP70N06

Mfr.#: RFP70N06

OMO.#: OMO-RFP70N06-ON-SEMICONDUCTOR

 MOSFET N-CH 60V 70A TO-220AB
RL1220T-R091-J

Mfr.#: RL1220T-R091-J

OMO.#: OMO-RL1220T-R091-J-SUSUMU

 Current Sense Resistors - SMD 1/4W 0.091ohm 5%
C1Q 1

Mfr.#: C1Q 1

OMO.#: OMO-C1Q-1-BEL

 Surface Mount Fuses Fuse
可用性
庫存:
774
訂購:
2757
輸入數量:
IGP40N65H5XKSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$2.91
US$2.91
10
US$2.48
US$24.80
100
US$2.15
US$215.00
250
US$2.04
US$510.00
500
US$1.83
US$915.00
1000
US$1.54
US$1 540.00
2500
US$1.46
US$3 650.00
5000
US$1.41
US$7 050.00
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