FDP8447L

Mfr. #:: FDP8447L
製造商:: ON Semiconductor / Fairchild
描述:: MOSFET 40V N-CH PowerTrench MOSFET
生命週期:: 製造商新產品
數據表:: FDP8447L 數據表
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更多信息:: FDP8447L 更多信息

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-220-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 40 V

Id - 連續漏極電流：: 12 A

Rds On - 漏源電阻：: 8.7 mOhms

Vgs - 柵源電壓：: 20 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 2 W

配置：: 單身的

頻道模式：: 增強

商品名：: 動力戰壕

打包：: 管子

高度：: 16.3 mm

長度：: 10.67 mm

系列：: FDP8447L

晶體管類型：: 1 N-Channel

寬度：: 4.7 mm

品牌：: 安森美半導體/飛兆半導體

秋季時間：: 4 ns

產品類別：: MOSFET

上升時間：: 7 ns

出廠包裝數量：: 800

子類別：: MOSFET

典型關斷延遲時間：: 28 ns

典型的開啟延遲時間：: 9 ns

單位重量：: 0.063493 oz

Tags: FDP84, FDP8, FDP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDP8447L 描述

***ical: Trans MOSFET N-CH Si 40V 12A 3-Pin(3+Tab) TO-220AB Rail

***ure Electronics: N-Channel 40 V 8.7 mOhm PowerTrench® Mosfet - TO-220

***emi: N-Channel PowerTrench® MOSFET 40V, 50A, 8.7mΩ

*** Stop Electro: Power Field-Effect Transistor, 50A I(D), 40V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: N-CHANNEL POWERTRENCH MOSFET; Transistor Type:MOSFET; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.

***ment14 APAC: MOSFET, N CH, 40V, 50A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Package / Case:TO-220; Power Dissipation Pd:2W; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:1.7V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***ark: MOSFET, N, 30V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:87A; Resistance, Rds On:0.0063ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:TO-220AB; ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, 30V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3709; Current Id Max:87A; N-channel Gate Charge:17nC; Package / Case:TO-220AB; Power Dissipation Pd:79W; Power Dissipation Pd:79mW; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V

***p One Stop Global: Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 3-TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:75W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220; Power Dissipation Pd:75W; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***i-Key: MOSFET N-CH 30V 75A TO220AB

***ser: MOSFETs- Power and Small Signal 30V 75A N-Channel

***el Electronic: 20V PCH+PCH MIDDLE POWER MOSFET,

***et: Trans MOSFET N-CH 30V 75A 3-Pin(3+Tab) TO-220AB Rail

***ser: MOSFETs- Power and Small Signal 30V 75A N-Channel No-Cancel/No-Return

***el Electronic: MOSFET N-CH 30V 75A TO220AB

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.009Ohm;ID 100A;TO-220AB;PD 170W;VGS +/-20V

***eco: Transistor MOSFET Negative Channel 40 Volt 100A 3-Pin(3+Tab) TO-220AB

***ure Electronics: Single N-Channel 40 V 0.009 Ohm 93 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 40V 100A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 40V, 100A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; No. of Transistors:1; On State resistance @ Vgs = 10V:9mohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:400A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 40 V 3.3 mOhm 62 nC HEXFET® Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH Si 40V 123A 3-Pin(3+Tab) TO-220AB Tube

*** Stop Electro: Power Field-Effect Transistor, 120A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N-CH, 40V, 118A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:99W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

FDP8447L 更多信息

Fairchild PowerTrench MOSFETs

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

型號	製造商	描述	庫存	價格
FDP8447L DISTI # FDP8447L-ND	ON Semiconductor	MOSFET N-CH 40V 12A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	1020In Stock	1600:$0.6641 800:$0.7350 100:$1.0847 10:$1.3730 1:$1.5500
FDP8447L DISTI # FDP8447L	ON Semiconductor	Trans MOSFET N-CH 40V 12A 3-Pin(3+Tab) TO-220AB Tube (Alt: FDP8447L) RoHS: Compliant Min Qty: 1600 Container: Tube	Asia - 0
FDP8447L DISTI # FDP8447L	ON Semiconductor	Trans MOSFET N-CH 40V 12A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FDP8447L) RoHS: Compliant Min Qty: 1600 Container: Tube	Americas - 0	1600:$0.4569 3200:$0.4539 4800:$0.4479 8000:$0.4429 16000:$0.4319
FDP8447L DISTI # FDP8447L	ON Semiconductor	Trans MOSFET N-CH 40V 12A 3-Pin(3+Tab) TO-220AB Tube (Alt: FDP8447L) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€0.7759 10:€0.6889 25:€0.6199 50:€0.5639 100:€0.5169 500:€0.4769 1000:€0.4429
FDP8447L DISTI # 52M3195	ON Semiconductor	N CHANNEL MOSFET, 40V, 12A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,MSL:- RoHS Compliant: Yes	0	1:$1.4500 10:$1.1300 100:$0.8870 1000:$0.6050 2000:$0.6010 10000:$0.5690 24000:$0.5530 50000:$0.5410
FDP8447L DISTI # 512-FDP8447L	ON Semiconductor	MOSFET 40V N-CH PowerTrench MOSFET RoHS: Compliant	1402	1:$1.3300 10:$1.1300 100:$0.8660 500:$0.7650 1000:$0.6040
FDP8447L	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 50A I(D), 40V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	8000	1000:$0.7600 500:$0.8000 100:$0.8400 25:$0.8700 1:$0.9400

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