IPP60R230P6XKSA1

IPP60R230P6XKSA1
Mfr. #:
IPP60R230P6XKSA1
製造商:
Infineon Technologies
描述:
MOSFET N-CH 600V TO220-3
生命週期:
製造商新產品
數據表:
IPP60R230P6XKSA1 數據表
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ECAD Model:
產品屬性
屬性值
Tags
IPP60R2, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 16.8 A 230 mO 31 nC CoolMOS P6 Power Transistor - TO-220
***ical
Trans MOSFET N-CH 600V 16.8A 3-Pin(3+Tab) TO-220 Tube
***et Europe
Trans MOSFET N-CH 600(Min)V 16.8A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 600V TO220-3
***ark
Mosfet, N-Ch, 600V, 16.8A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:16.8A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.207Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 16.8A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:16.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.207ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:126W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P6 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 600V, 16,8A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:16.8A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.207ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:126W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P6 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
型號 製造商 描述 庫存 價格
IPP60R230P6XKSA1
DISTI # IPP60R230P6XKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
    IPP60R230P6XKSA1
    DISTI # SP001017064
    Infineon Technologies AGTrans MOSFET N-CH 600(Min)V 16.8A 3-Pin TO-220 Tube (Alt: SP001017064)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1000:€1.0389
    • 500:€1.0589
    • 100:€1.0749
    • 50:€1.0939
    • 25:€1.1719
    • 10:€1.4099
    • 1:€1.8109
    IPP60R230P6XKSA1
    DISTI # 726-IPP60R230P6XKSA1
    Infineon Technologies AGMOSFET LOW POWER_LEGACY
    RoHS: Compliant
    100
    • 1:$2.4900
    • 10:$2.1100
    • 100:$1.6900
    • 500:$1.4800
    • 1000:$1.2300
    IPP60R230P6
    DISTI # 726-IPP60R230P6
    Infineon Technologies AGMOSFET LOW POWER_LEGACY
    RoHS: Compliant
    0
      IPP60R230P6XKSA1
      DISTI # 2710007
      Infineon Technologies AGMOSFET, N-CH, 600V, 16.8A, TO-220
      RoHS: Compliant
      0
      • 1000:$1.7200
      • 500:$1.8200
      • 100:$1.9300
      • 10:$2.1700
      • 1:$2.3300
      IPP60R230P6XKSA1
      DISTI # 2710007
      Infineon Technologies AGMOSFET, N-CH, 600V, 16.8A, TO-2200
      • 500:£1.1000
      • 250:£1.2000
      • 100:£1.2800
      • 10:£1.5400
      • 1:£2.0100
      圖片 型號 描述
      IPP60R230P6XKSA1

      Mfr.#: IPP60R230P6XKSA1

      OMO.#: OMO-IPP60R230P6XKSA1

      MOSFET LOW POWER_LEGACY
      IPP60R230P6

      Mfr.#: IPP60R230P6

      OMO.#: OMO-IPP60R230P6-1190

      MOSFET LOW POWER_LEGACY
      IPP60R230P6XKSA1

      Mfr.#: IPP60R230P6XKSA1

      OMO.#: OMO-IPP60R230P6XKSA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 600V TO220-3
      可用性
      庫存:
      Available
      訂購:
      4500
      輸入數量:
      IPP60R230P6XKSA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$1.77
      US$1.77
      10
      US$1.68
      US$16.82
      100
      US$1.59
      US$159.38
      500
      US$1.51
      US$752.60
      1000
      US$1.42
      US$1 416.70
      由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
      從...開始
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