IRFS7437PBF

Mfr. #:: IRFS7437PBF
製造商:: Infineon Technologies
描述:: Darlington Transistors MOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, D2-Pak
生命週期:: 製造商新產品
數據表:: IRFS7437PBF 數據表
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HTML Datasheet:: IRFS7437PBF Datasheet IRFS7437PBF Datasheet (P4-P6)IRFS7437PBF Datasheet (P7-P9)IRFS7437PBF Datasheet (P10-P12)
ECAD Model:

產品屬性
屬性值

製造商: 國際整流器

產品分類: 晶體管 - FET、MOSFET - 單

Tags: IRFS7437, IRFS743, IRFS74, IRFS7, IRFS, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFS7437PBF 描述

*** Source Electronics: Trans MOSFET N-CH Si 40V 250A 3-Pin(2+Tab) D2PAK Tube / MOSFET N CH 40V 195A D2PAK

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 195A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 40V, 195A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:230W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

***ure Electronics: Single N-Channel 40 V 1.8 mOhm 150 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***Yang: Trans MOSFET N-CH 40V 250A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

*** Stop Electro: Power Field-Effect Transistor, 195A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 40V, 195A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:230W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

***(Formerly Allied Electronics): AUIRFS8407 N-channel MOSFET Transistor; 195 A; 250 A; 40 V; 3-Pin D2PAK

***ineon SCT: Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH Si 40V 250A Automotive 3-Pin(2+Tab) D2PAK Tube

***nell: MOSFET, 40V, 195A, Q101, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Battery Switch; Brushed Motor Drive; Brushless Motor Drive; DC-DC; Electric Power Steering; Glowplug; PTC Heater; Relay Replacement

***ark: Mosfet Transistor, N Channel, 195 A, 40 V, 0.00125 Ohm, 10 V, 3 V Rohs Compliant: Yes

***(Formerly Allied Electronics): IRFS7434PBF N-channel MOSFET Transistor; 320 A; 40 V; 3-Pin D2PAK

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 40 V 1.6 mOhm 216 nC HEXFET® Power Mosfet - D2PAK

***Yang: Trans MOSFET N-CH 40V 320A 3-Pin D2PAK T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability

***nell: MOSFET, N-CH, 40V, 195A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.00125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V

Market price

型號	製造商	描述	庫存	價格
IRFS7437PBF DISTI # IRFS7437PBF-ND	Infineon Technologies AG	MOSFET N CH 40V 195A D2PAK RoHS: Compliant Min Qty: 1 Container: Tube	Limited Supply - Call
IRFS7437PBF DISTI # 70394779	Infineon Technologies AG	IRFS7437PBF N-channel MOSFET Transistor,195 A,250 A,40 V,3-Pin D2PAK RoHS: Compliant	0	400:$1.0800
IRFS7437PBF DISTI # 942-IRFS7437PBF	Infineon Technologies AG	MOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, D2-Pak RoHS: Compliant	0
IRFS7437TRLPBF DISTI # IRFS7437PBF-GURT	Infineon Technologies AG	N-Ch 40V 195A 230W 0,0018R DPak RoHS: Compliant	150	10:€0.9800 50:€0.7800 200:€0.6800 500:€0.6545
IRFS7437PBF	International Rectifier	RoHS: Compliant	Europe - 350
IRFS7437PBF DISTI # 2253798	Infineon Technologies AG	MOSFET, N-CH, 40V, 195A, D2-PAK RoHS: Compliant	0	1:$3.1000 10:$2.7900 100:$2.2400 500:$1.8400 1000:$1.5300

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