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SISH110DN-T1-GE3

SISH110DN-T1-GE3
Mfr. #:
SISH110DN-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 20V Vds 20V Vgs PowerPAK 1212-8
生命週期:
製造商新產品
數據表:
SISH110DN-T1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
SISH110DN-T1-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
PowerPAK-1212-8SH
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
20 V
Id - 連續漏極電流：
21.1 A
Rds On - 漏源電阻：
5.3 mOhms
Vgs th - 柵源閾值電壓：
1.5 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
21 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
3.8 W
配置：
單身的
頻道模式：
增強
商品名：
TrenchFET、PowerPAK
打包：
捲軸
系列：
情報局
晶體管類型：
1 N-Channel TrenchFET Power MOSFET
品牌：
威世 / Siliconix
正向跨導 - 最小值：
71 S
秋季時間：
10 ns
產品類別：
MOSFET
上升時間：
10 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
36 ns
典型的開啟延遲時間：
12 ns
Tags
SISH11, SISH1, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
型號 製造商 描述 庫存 價格
SISH110DN-T1-GE3
DISTI # V99:2348_22712066		Vishay IntertechnologiesN-Channel 20 V (D-S) Fast Switching MOSFET PowerPAK 1212-8SH 300M , 5.3 m @ 10V m @ 7.5V 7.8 m @ 4.56000
  • 3000:$0.6094
  • 1000:$0.6213
  • 500:$0.7945
  • 100:$0.9461
  • 10:$1.2668
  • 1:$1.6428
SISH110DN-T1-GE3
DISTI # SISH110DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 20V PPAK 1212-8SH
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6050In Stock
  • 1000:$0.7300
  • 500:$0.9247
  • 100:$1.1194
  • 10:$1.4360
  • 1:$1.6100
SISH110DN-T1-GE3
DISTI # SISH110DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 20V PPAK 1212-8SH
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6050In Stock
  • 1000:$0.7300
  • 500:$0.9247
  • 100:$1.1194
  • 10:$1.4360
  • 1:$1.6100
SISH110DN-T1-GE3
DISTI # SISH110DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 20V PPAK 1212-8SH
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 15000:$0.6048
  • 6000:$0.6284
  • 3000:$0.6615
SISH110DN-T1-GE3
DISTI # 31579465		Vishay IntertechnologiesN-Channel 20 V (D-S) Fast Switching MOSFET PowerPAK 1212-8SH 300M , 5.3 m @ 10V m @ 7.5V 7.8 m @ 4.56000
  • 3000:$0.6094
  • 1000:$0.6213
  • 500:$0.7945
  • 100:$0.9461
  • 11:$1.2668
SISH110DN-T1-GE3
DISTI # SISH110DN-T1-GE3		Vishay IntertechnologiesN-CH 20-V (D-S) FAST SWITCHING MOSFE - Tape and Reel (Alt: SISH110DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.5759
  • 30000:$0.5919
  • 18000:$0.6089
  • 12000:$0.6349
  • 6000:$0.6549
SISH110DN-T1-GE3
DISTI # 99AC9581		Vishay IntertechnologiesMOSFET, N-CH, 20V, 13.5A, 150DEG C, 1.5W,Transistor Polarity:N Channel,Continuous Drain Current Id:13.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0044ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,RoHS Compliant: Yes45
  • 500:$0.8650
  • 250:$0.9350
  • 100:$1.0000
  • 50:$1.1000
  • 25:$1.2000
  • 10:$1.3000
  • 1:$1.5900
SISH110DN-T1-GE3
DISTI # 81AC3492		Vishay IntertechnologiesN-CH 20-V (D-S) FAST SWITCHING MOSFE0
  • 10000:$0.5720
  • 6000:$0.5850
  • 4000:$0.6080
  • 2000:$0.6750
  • 1000:$0.7430
  • 1:$0.7740
SISH110DN-T1-GE3
DISTI # 78-SISH110DN-T1-GE3		Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAK 1212-8
RoHS: Compliant		6000
  • 1:$1.5700
  • 10:$1.2900
  • 100:$0.9940
  • 500:$0.8550
  • 1000:$0.6740
  • 3000:$0.6290
  • 6000:$0.5980
  • 9000:$0.5760
SISH110DN-T1-GE3
DISTI # 3019127		Vishay IntertechnologiesMOSFET, N-CH, 20V, 13.5A, 150DEG C, 1.5W45
  • 500:£0.6210
  • 250:£0.6710
  • 100:£0.7210
  • 10:£0.9880
  • 1:£1.3000
SISH110DN-T1-GE3
DISTI # 3019127		Vishay IntertechnologiesMOSFET, N-CH, 20V, 13.5A, 150DEG C, 1.5W
RoHS: Compliant		45
  • 5000:$0.7440
  • 1000:$0.7490
  • 500:$0.9250
  • 250:$1.0200
  • 100:$1.1200
  • 25:$1.4200
  • 5:$1.5600
圖片 型號 描述
USB5734/MR

Mfr.#: USB5734/MR

OMO.#: OMO-USB5734-MR

 USB Interface IC Hi-Speed USB Cont Hub w/ Bridging
USB5734/MR

Mfr.#: USB5734/MR

OMO.#: OMO-USB5734-MR-MICROCHIP-TECHNOLOGY

 USB Interface IC Hi-Speed USB Cont Hub w/ Bridging
可用性
庫存:
Available
訂購:
1988
輸入數量:
SISH110DN-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.57
US$1.57
10
US$1.29
US$12.90
100
US$0.99
US$99.40
500
US$0.86
US$427.50
1000
US$0.67
US$674.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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