IS66WVE1M16EBLL-70BLI-TR

IS66WVE1M16EBLL-70BLI-TR
Mfr. #:
IS66WVE1M16EBLL-70BLI-TR
製造商:
ISSI
描述:
SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
生命週期:
製造商新產品
數據表:
IS66WVE1M16EBLL-70BLI-TR 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IS66WVE1M16EBLL-70BLI-TR 更多信息
產品屬性
屬性值
製造商:
國際空間站
產品分類:
靜態隨機存取存儲器
RoHS:
Y
內存大小:
16 Mbit
組織:
1 M x 16
訪問時間:
70 ns
接口類型:
平行線
電源電壓 - 最大值:
3.6 V
電源電壓 - 最小值:
2.7 V
電源電流 - 最大值:
30 mA
最低工作溫度:
- 40 C
最高工作溫度:
+ 85 C
安裝方式:
貼片/貼片
包裝/案例:
TFBGA-48
打包:
捲軸
內存類型:
特別提款權
系列:
IS66WVE1M16EBLL
類型:
異步
品牌:
國際空間站
濕氣敏感:
是的
產品類別:
靜態隨機存取存儲器
出廠包裝數量:
2500
子類別:
內存和數據存儲
Tags
IS66WVE1M16E, IS66WVE1, IS66WVE, IS66WV, IS66W, IS66, IS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
PSRAM Async 16Mbit 1M X 16 70ns 48-Pin TFBGA T/R
***ark
16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V
***i-Key
IC PSRAM 16M PARALLEL 48TFBGA
Pseudo SRAM/CellularRAM
ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has a SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature which does not require physical refresh. These CellularRAM devics are designed in accordance to the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.
圖片 型號 描述
IS66WVE1M16EBLL-70BLI-TR

Mfr.#: IS66WVE1M16EBLL-70BLI-TR

OMO.#: OMO-IS66WVE1M16EBLL-70BLI-TR

SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE1M16EBLL-70BLI

Mfr.#: IS66WVE1M16EBLL-70BLI

OMO.#: OMO-IS66WVE1M16EBLL-70BLI

SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE1M16EBLL-55BLI-TR

Mfr.#: IS66WVE1M16EBLL-55BLI-TR

OMO.#: OMO-IS66WVE1M16EBLL-55BLI-TR

SRAM 16Mb Pseudo SRAM Asynch/Page
IS66WVE1M16EBLL-70BLI

Mfr.#: IS66WVE1M16EBLL-70BLI

OMO.#: OMO-IS66WVE1M16EBLL-70BLI-INTEGRATED-SILICON-SOLUTION

SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE1M16EBLL-55BLI

Mfr.#: IS66WVE1M16EBLL-55BLI

OMO.#: OMO-IS66WVE1M16EBLL-55BLI-INTEGRATED-SILICON-SOLUTION

SRAM 16Mb Pseudo SRAM Asynch/Page
可用性
庫存:
Available
訂購:
3000
輸入數量:
IS66WVE1M16EBLL-70BLI-TR的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$3.25
US$3.25
10
US$2.86
US$28.60
100
US$2.56
US$256.00
500
US$2.46
US$1 230.00
1000
US$2.19
US$2 190.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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