IPB108N15N3GATMA1

IPB108N15N3GATMA1
Mfr. #:
IPB108N15N3GATMA1
製造商:
Infineon Technologies
描述:
MOSFET MV POWER MOS
生命週期:
製造商新產品
數據表:
IPB108N15N3GATMA1 數據表
交貨:
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支付:
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ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
技術:
安裝方式:
貼片/貼片
包裝/案例:
TO-263-3
通道數:
1 Channel
晶體管極性:
N通道
配置:
單身的
商品名:
優化MOS
打包:
捲軸
高度:
4.4 mm
長度:
10 mm
晶體管類型:
1 N-Channel
寬度:
9.25 mm
品牌:
英飛凌科技
產品類別:
MOSFET
子類別:
MOSFET
第 # 部分別名:
G IPB108N15N3 IPB18N15N3GXT SP000677862
單位重量:
0.139332 oz
Tags
IPB108N15N3G, IPB108, IPB10, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 150 V 10.8 mOhm 41 nC OptiMOS™ Power Mosfet - D2PAK
***ow.cn
Trans MOSFET N-CH 150V 83A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO263-3, RoHS
***ineon
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
型號 製造商 描述 庫存 價格
IPB108N15N3GATMA1
DISTI # V72:2272_06378661
Infineon Technologies AGTrans MOSFET N-CH 150V 83A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
    IPB108N15N3GATMA1
    DISTI # V36:1790_06378661
    Infineon Technologies AGTrans MOSFET N-CH 150V 83A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    0
    • 1000000:$2.1480
    • 500000:$2.1510
    • 100000:$2.3420
    • 10000:$2.6590
    • 1000:$2.7110
    IPB108N15N3GATMA1
    DISTI # IPB108N15N3GATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 150V 83A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    7116In Stock
    • 500:$2.7588
    • 100:$3.2408
    • 10:$3.9550
    • 1:$4.4000
    IPB108N15N3GATMA1
    DISTI # IPB108N15N3GATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 150V 83A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    7116In Stock
    • 500:$2.7588
    • 100:$3.2408
    • 10:$3.9550
    • 1:$4.4000
    IPB108N15N3GATMA1
    DISTI # IPB108N15N3GATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 150V 83A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    7000In Stock
    • 2000:$2.1460
    • 1000:$2.2590
    IPB108N15N3GXT
    DISTI # IPB108N15N3GATMA1
    Infineon Technologies AGTrans MOSFET N-CH 150V 83A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB108N15N3GATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 6000:$1.8900
    • 10000:$1.8900
    • 4000:$1.9900
    • 2000:$2.0900
    • 1000:$2.1900
    IPB108N15N3GATMA1
    DISTI # 85X6017
    Infineon Technologies AGMOSFET Transistor, N Channel, 83 A, 150 V, 0.0091 ohm, 10 V, 3 V RoHS Compliant: Yes862
    • 500:$2.5800
    • 250:$2.8700
    • 100:$3.0200
    • 50:$3.1700
    • 25:$3.3300
    • 10:$3.4800
    • 1:$4.1000
    IPB108N15N3 G
    DISTI # 726-IP726-B108N15N3G
    Infineon Technologies AGMOSFET N-Ch 150V 83A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    1489
    • 1:$4.0600
    • 10:$3.4500
    • 100:$2.9900
    • 250:$2.8400
    • 500:$2.5500
    • 1000:$2.1500
    • 2000:$2.0400
    IPB108N15N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant
    625
    • 1000:$1.8200
    • 500:$1.9100
    • 100:$1.9900
    • 25:$2.0800
    • 1:$2.2400
    IPB108N15N3GATMA1
    DISTI # 2443383
    Infineon Technologies AGMOSFET, N CH, 150V, 83A, TO-263-3
    RoHS: Compliant
    862
    • 1000:$3.2400
    • 500:$3.8400
    • 250:$4.2800
    • 100:$4.5100
    • 10:$5.2000
    • 1:$6.1200
    IPB108N15N3GATMA1
    DISTI # 2443383RL
    Infineon Technologies AGMOSFET, N CH, 150V, 83A, TO-263-3
    RoHS: Compliant
    0
    • 1000:$3.2400
    • 500:$3.8400
    • 250:$4.2800
    • 100:$4.5100
    • 10:$5.2000
    • 1:$6.1200
    IPB108N15N3GATMA1
    DISTI # 2443383
    Infineon Technologies AGMOSFET, N CH, 150V, 83A, TO-263-3892
    • 500:£1.9700
    • 250:£2.1900
    • 100:£2.3000
    • 10:£2.6600
    • 1:£3.5000
    圖片 型號 描述
    IPB108N15N3 G

    Mfr.#: IPB108N15N3 G

    OMO.#: OMO-IPB108N15N3-G

    MOSFET N-Ch 150V 83A D2PAK-2 OptiMOS 3
    IPB108N15N3GATMA1

    Mfr.#: IPB108N15N3GATMA1

    OMO.#: OMO-IPB108N15N3GATMA1

    MOSFET MV POWER MOS
    IPB108N15N3G 108N15N

    Mfr.#: IPB108N15N3G 108N15N

    OMO.#: OMO-IPB108N15N3G-108N15N-1190

    全新原裝
    IPB108N15N3

    Mfr.#: IPB108N15N3

    OMO.#: OMO-IPB108N15N3-1190

    全新原裝
    IPB108N15N3 G

    Mfr.#: IPB108N15N3 G

    OMO.#: OMO-IPB108N15N3-G-1190

    Trans MOSFET N-CH 150V 83A 3-Pin TO-263 T/R (Alt: IPB108N15N3 G)
    IPB108N15N3G

    Mfr.#: IPB108N15N3G

    OMO.#: OMO-IPB108N15N3G-1190

    Power Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    IPB108N15N3GATMA1

    Mfr.#: IPB108N15N3GATMA1

    OMO.#: OMO-IPB108N15N3GATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 150V 83A TO263-3
    IPB108N15N3GS

    Mfr.#: IPB108N15N3GS

    OMO.#: OMO-IPB108N15N3GS-1190

    全新原裝
    可用性
    庫存:
    Available
    訂購:
    5000
    輸入數量:
    IPB108N15N3GATMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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