FGA15N120ANTDTU

Mfr. #:: FGA15N120ANTDTU
製造商:: ON Semiconductor / Fairchild
描述:: IGBT Transistors 1200V NPT Trench IGBT
生命週期:: 製造商新產品
數據表:: FGA15N120ANTDTU 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO-3P-3

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 1200 V

最大柵極發射極電壓：: 20 V

Pd - 功耗：: 186 W

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

打包：: 管子

連續集電極電流 Ic 最大值：: 30 A

高度：: 19.9 mm

長度：: 15.6 mm

寬度：: 4.8 mm

品牌：: 安森美半導體/飛兆半導體

產品類別：: IGBT晶體管

出廠包裝數量：: 450

子類別：: IGBT

單位重量：: 0.245577 oz

Tags: FGA15N120ANTDT, FGA15N120ANT, FGA15N120AN, FGA15N120A, FGA15N120, FGA15N1, FGA15N, FGA15, FGA1, FGA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGA15N120ANTDTU 描述

***ical: Trans IGBT Chip N-CH 1.2KV 30A 3-Pin (3+Tab) TO-3P Rail

***ser: MOSFETs 1200V NPT Trench IGBT

***i-Key: IGBT NPT 1200V 15A TO-3P

***ment14 APAC: IGBT, NPT, 1200V, TO-3P; DC Collector Current:30A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:186W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Ic @ Vce Sat:15A; Current Ic Continuous a Max:30A; Current Temperature:25°C; Fall Time tf:100ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.67°C/W; No. of Transistors:1; Package / Case:TO-3P; Pin Configuration:With flywheel diode; Power Dissipation Max:186W; Power Dissipation Pd:186W; Pulsed Current Icm:45A; Rise Time:20ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

Market price

型號	製造商	描述	庫存	價格
FGA15N120ANTDTU-F109 DISTI # 31299420	ON Semiconductor	1200V NPT TRENCH IGBT	2590	10:$1.0760
FGA15N120ANTDTU-F109 DISTI # FGA15N120ANTDTU-F109-ND	ON Semiconductor	IGBT 1200V 30A 186W TO3P RoHS: Compliant Min Qty: 1 Container: Tube	71In Stock	1350:$1.4057 900:$1.6966 450:$1.9389 10:$2.5690 1:$2.8600
FGA15N120ANTDTU DISTI # FGA15N120ANTDTU-ND	ON Semiconductor	IGBT 1200V 30A 186W TO3P RoHS: Compliant Min Qty: 450 Container: Tube	Limited Supply - Call
FGA15N120ANTDTU-F109 DISTI # C1S541901598224	ON Semiconductor	Unclassified	2590	2000:$1.3000 1000:$1.4000 500:$1.8300 100:$1.9900 25:$2.4200 5:$2.9900
FGA15N120ANTDTU_F109 DISTI # FGA15N120ANTDTU-F109	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 24A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FGA15N120ANTDTU-F109) RoHS: Compliant Min Qty: 1	Europe - 0	1:€1.7449 10:€1.4269 25:€1.2199 50:€1.1079 100:€1.0899 500:€1.0739 1000:€1.0569
FGA15N120ANTDTU_F109 DISTI # FGA15N120ANTDTU-F109	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 24A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA15N120ANTDTU-F109) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$1.0489 900:$1.0419 1800:$1.0289 2700:$1.0159 4500:$0.9909
FGA15N120ANTDTU-F109 DISTI # 31Y1431	ON Semiconductor	IGBT, SINGLE, 1.2KV, 30A, TO-3P-3,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):2.3V,Power Dissipation Pd:186W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes	368	1:$2.7200 10:$2.3100 100:$1.8500 500:$1.6200 1000:$1.3400 2500:$1.2500 5000:$1.2100
FGA15N120ANTDTU DISTI # 512-FGA15N120ANTDTU	ON Semiconductor	IGBT Transistors 1200V NPT Trench IGBT RoHS: Compliant	0
FGA15N120ANTDTU-F109 DISTI # 512-FGA15N120ANTDTUF	ON Semiconductor	IGBT Transistors 1200V NPT Trench RoHS: Compliant	513	1:$2.7200 10:$2.3100 100:$1.8500 500:$1.6200 1000:$1.3400
FGA15N120ANTDTU	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	10712	1000:$1.6300 500:$1.7200 100:$1.7900 25:$1.8700 1:$2.0100
FGA15N120ANTDTU_F109 DISTI # 6715398P	ON Semiconductor	TRANSISTOR IGBT N-CH 1.2KV 24A TO-3P(N), TU	18	25:£1.9600 100:£1.8000 250:£1.6800 500:£1.5600
FGA15N120ANTDTU_F109 DISTI # 6715398	ON Semiconductor	TRANSISTOR IGBT N-CH 1.2KV 24A TO-3P(N), EA	38	1:£2.3900 25:£1.9600 100:£1.8000 250:£1.6800 500:£1.5600
FGA15N120ANTDTU-F109 DISTI # 2453877	ON Semiconductor	IGBT, SINGLE, 1.2KV, 30A, TO-3P-3 RoHS: Compliant	818	1:£2.1000 10:£1.7200 100:£1.3900 250:£1.2600 500:£1.1300
FGA15N120ANTDTU DISTI # 1324824	ON Semiconductor	RoHS: Compliant	0	1:$3.1000 25:$2.8300 100:$2.6500 250:$2.4100 500:$2.0300 1000:$1.7500
FGA15N120ANTDTU-F109 DISTI # 2453877	ON Semiconductor	IGBT, SINGLE, 1.2KV, 30A, TO-3P-3 RoHS: Compliant	818	1:$4.3100 10:$3.6600 100:$2.9300 500:$2.5700 1000:$2.1300 2500:$1.9800 5000:$1.9200 10000:$1.8400

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