HUF76619D3S

Mfr. #:: HUF76619D3S
製造商:: ON Semiconductor
描述:: MOSFET N-CH 100V 18A DPAK
生命週期:: 製造商新產品
數據表:: HUF76619D3S 數據表
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HTML Datasheet:: HUF76619D3S Datasheet HUF76619D3S Datasheet (P4-P6)HUF76619D3S Datasheet (P7-P9)HUF76619D3S Datasheet (P10)
ECAD Model:

產品屬性
屬性值

製造商: 仙童

產品分類: FET - 單

系列: 超場效應晶體管

打包: 管子

零件狀態: 過時的

場效應管類型: N通道

技術: MOSFET（金屬氧化物）

漏源電壓 (Vdss): 100V

電流 - 連續漏極 (Id) @ 25°C: 18A (Tc)

驅動電壓 (Max Rds On, Min Rds On): 4.5V, 10V

Vgs(th) (Max) @ Id: 3V @ 250A

柵極電荷 (Qg)（最大值）@ Vgs: 29nC @ 10V

Vgs（最大）: ±16V

輸入電容 (Ciss) (Max) @ Vds: 767pF @ 25V

場效應管特性: -

功耗（最大）: 75W (Tc)

Rds On (Max) @ Id, Vgs: 85 mOhm @ 18A, 10V

工作溫度: -55°C ~ 175°C (TJ)

安裝方式: 表面貼裝

供應商設備包: TO-252AA

包裝/箱: TO-252-3, DPak (2 Leads + Tab), SC-63

Tags: HUF7661, HUF766, HUF76, HUF7, HUF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

型號	製造商	描述	庫存	價格
HUF76619D3S DISTI # HUF76619D3S-ND	ON Semiconductor	MOSFET N-CH 100V 18A DPAK RoHS: Compliant Min Qty: 1800 Container: Tube	Limited Supply - Call
HUF76619D3ST DISTI # HUF76619D3ST-ND	ON Semiconductor	MOSFET N-CH 100V 18A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
HUF76619D3S DISTI # 512-HUF76619D3S	ON Semiconductor	MOSFET 18a 100V 0.087 Ohm Logic Level N-Ch RoHS: Compliant	0
HUF76619D3ST DISTI # 512-HUF76619D3ST	ON Semiconductor	MOSFET 18a 100V 0.087 Ohm Logic Level N-Ch RoHS: Compliant	0
HUF76619D3S	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 18A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	6406	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3300 1:$0.3600
HUF76619D3ST	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 18A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	4675	1000:$0.2600 500:$0.2800 100:$0.2900 25:$0.3000 1:$0.3200
HUF76619D3S	Intersil Corporation		1439	1112:$0.8186 595:$0.9004 1:$2.1828
HUF76619D3S	Fairchild Semiconductor Corporation	RoHS: Not Compliant	185

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