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IRLZ34NSTRLPBF

IRLZ34NSTRLPBF
Mfr. #:
IRLZ34NSTRLPBF
製造商:
Infineon Technologies
描述:
MOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl
生命週期:
製造商新產品
數據表:
IRLZ34NSTRLPBF 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
IRLZ34NSTRLPBF DatasheetIRLZ34NSTRLPBF Datasheet (P4-P6)IRLZ34NSTRLPBF Datasheet (P7-P9)IRLZ34NSTRLPBF Datasheet (P10-P11)
ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-252-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
55 V
Id - 連續漏極電流：
30 A
Rds On - 漏源電阻：
60 mOhms
Vgs - 柵源電壓：
16 V
Qg - 門電荷：
16.7 nC
Pd - 功耗：
68 W
配置：
單身的
打包：
捲軸
高度：
2.3 mm
長度：
6.5 mm
晶體管類型：
1 N-Channel
寬度：
6.22 mm
品牌：
英飛凌科技
產品類別：
MOSFET
出廠包裝數量：
800
子類別：
MOSFET
第 # 部分別名：
SP001573060
單位重量：
0.139332 oz
Tags
IRLZ34NST, IRLZ34NS, IRLZ34N, IRLZ3, IRLZ, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 55 V 0.06 Ohm 25 nC HEXFET® Power Mosfet - D2PAK
***p One Stop
Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R
***eco
IRLZ34NSTRLPBF,MOSFET, 55V, 30 A, 35 MOHM, 16.7 NC QG, LOGIC
*** Stop Electro
Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:30A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:16V; Package/Case:D-Pak; Power Dissipation, Pd:68W ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 55V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:68W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:21A; Cont Current Id @ 25°C:30A; Current Id Max:30A; Package / Case:D2-PAK; Power Dissipation Pd:68W; Power Dissipation Pd:68W; Pulse Current Idm:110A; Rth:2.2; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 30 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 35 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 8.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 68
***ure Electronics
Single N-Channel 55 V 0.04 Ohm 34 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***fin
Transistor NPN Field Effect IRFZ34/SO/IRFZ34NS INTERNATIONAL RECTIFIER Ampere=26 V=55 TO263
***ical
Trans MOSFET N-CH 55V 29A 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
MOSFET, 55V, 29A, 40 MOHM, 22.7 NC QG, D2-PAK | Infineon IRFZ34NSTRRPBF
*** Stop Electro
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
N Channel Mosfet, 55V, 29A, D2-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:29A; On Resistance Rds(On):0.04Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***emi
N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 32 A, 35 mΩ, D2PAK
***ark
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,32A I(D),TO-263AB
***ure Electronics
N-Channel 60 V 0.035 Ohm Surface Mount Mosfet - D2PAK-3
***et
Trans MOSFET N-CH 60V 32A 3-Pin(2+Tab) D2PAK T/R
***enic
60V 32A 35m´Î@10V16A 79W 2.5V@250Ã×A N Channel D2PAK¨×TO-263AB¨Ø MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 60V, 32A, TO263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.027ohm; Available until stocks are exhausted Alternative available
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***icroelectronics
N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package
***ure Electronics
N-Channel 60 V 38 A 28 mOhm 80 W Surface Mount STripFET™ Mosfet - D2PAK
***ical
Trans MOSFET N-CH 60V 38A Automotive 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N CH, 60V, 38A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:60V; On Resistance Rds(on):235mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:80W; Operating Temperature Range:-65°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:38A; Package / Case:D2-PAK; Power Dissipation Pd:80W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 60V - 0.032Ohm - 30A - D2PAK STripFET(TM) II Power MOSFET
***ical
Trans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 60 V 0.04 Ohm Surface Mount STripFET™ II Power MosFet - D2PAK
***r Electronics
Power Field-Effect Transistor, 30A I(D), 60V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 60V, 30A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power D
型號 製造商 描述 庫存 價格
IRLZ34NSTRLPBF
DISTI # V36:1790_13891279		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		5600
  • 40000:$0.4363
  • 24000:$0.4848
  • 8000:$0.4851
  • 1600:$0.5422
IRLZ34NSTRLPBF
DISTI # V72:2272_13891279		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1064
  • 1000:$0.5232
  • 500:$0.6710
  • 250:$0.7234
  • 100:$0.7512
  • 25:$0.9479
  • 10:$0.9499
  • 1:$1.0919
IRLZ34NSTRLPBF
DISTI # IRLZ34NSTRLPBFCT-ND		Infineon Technologies AGMOSFET N-CH 55V 30A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		28011In Stock
  • 100:$1.0307
  • 10:$1.3040
  • 1:$1.4700
IRLZ34NSTRLPBF
DISTI # IRLZ34NSTRLPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 55V 30A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		28011In Stock
  • 100:$1.0307
  • 10:$1.3040
  • 1:$1.4700
IRLZ34NSTRLPBF
DISTI # IRLZ34NSTRLPBFTR-ND		Infineon Technologies AGMOSFET N-CH 55V 30A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		28000In Stock
  • 800:$0.6780
IRLZ34NSTRLPBF
DISTI # 30568028		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		4800
  • 1600:$0.5422
IRLZ34NSTRLPBF
DISTI # 30702069		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		4800
  • 1600:$0.3984
  • 800:$0.4128
IRLZ34NSTRLPBF
DISTI # 30321972		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1064
  • 1000:$0.5232
  • 500:$0.6710
  • 250:$0.7234
  • 100:$0.7512
  • 25:$0.9479
  • 14:$0.9499
IRLZ34NSTRLPBF
DISTI # IRLZ34NSTRLPBF		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRLZ34NSTRLPBF)
RoHS: Compliant
Min Qty: 1600
Container: Reel		Americas - 0
  • 1600:$0.4269
  • 3200:$0.4119
  • 4800:$0.3969
  • 8000:$0.3839
  • 16000:$0.3769
IRLZ34NSTRLPBF
DISTI # IRLZ34NSTRLPBF		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R (Alt: IRLZ34NSTRLPBF)
RoHS: Compliant
Min Qty: 1600
Container: Tape and Reel		Asia - 0
  • 1600:$0.4050
  • 3200:$0.3937
  • 4800:$0.3831
  • 8000:$0.3730
  • 16000:$0.3682
  • 40000:$0.3635
  • 80000:$0.3589
IRLZ34NSTRLPBF
DISTI # SP001573060		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001573060)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 800:€0.4809
  • 1600:€0.4789
  • 3200:€0.4779
  • 4800:€0.4769
  • 8000:€0.4759
IRLZ34NSTRLPBF
DISTI # 70019902		Infineon Technologies AGIRLZ34NSTRLPBF N-channel MOSFET Transistor,30 A,55 V,3+Tab-Pin D2PAK
RoHS: Compliant		0
  • 1600:$1.7600
IRLZ34NSTRLPBF
DISTI # 942-IRLZ34NSTRLPBF		Infineon Technologies AGMOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl
RoHS: Compliant		9921
  • 1:$1.2200
  • 10:$1.0400
  • 100:$0.7990
  • 500:$0.7060
  • 800:$0.5570
IRLZ34NSTRLPBFInfineon Technologies AGSingle N-Channel 55 V 0.06 Ohm 25 nC HEXFET Power Mosfet - D2PAK
RoHS: Compliant		4000Reel
  • 800:$0.4750
  • 1600:$0.4600
IRLZ34NSTRLPBFInternational RectifierPower Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		400
  • 1000:$0.4900
  • 500:$0.5100
  • 100:$0.5300
  • 25:$0.5600
  • 1:$0.6000
IRLZ34NSTRLPBF
DISTI # 9155112P		Infineon Technologies AGMOSFET N-CHANNEL HEXFET 55V 30A D2PAK, RL2380
  • 40:£0.6660
  • 200:£0.5780
  • 400:£0.4910
  • 1000:£0.4030
IRLZ34NSTRLPBFInternational Rectifier 9933
    IRLZ34NSTRLPBF
    DISTI # TMOSP12700    		Infineon Technologies AGN-CH 55V 30A 35mOhm TO263
    RoHS: Compliant    		Stock DE - 0Stock US - 0
    • 1600:$0.4817
    • 3200:$0.4525
    • 4800:$0.4087
    • 9600:$0.3941
    IRLZ34NSTRLPBF
    DISTI # 1298487    		Infineon Technologies AGMOSFET, N, 55V, D2-PAK
    RoHS: Compliant    		0
    • 1:$1.9400
    • 10:$1.6500
    • 100:$1.2600
    • 500:$1.1200
    • 800:$0.8810
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    Mfr.#: IRLZ34NPBF

    OMO.#: OMO-IRLZ34NPBF

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    OMO.#: OMO-43650-0215-410

    		 Headers & Wire Housings MICRO-FIT 3.0 HEADER
    4922R-21L

    Mfr.#: 4922R-21L

    OMO.#: OMO-4922R-21L-API-DELEVAN

    		 Fixed Inductors 47 uH
    TAJA105M035RNJ

    Mfr.#: TAJA105M035RNJ

    OMO.#: OMO-TAJA105M035RNJ-AVX

    		 Tantalum Capacitors - Solid SMD 35volts 1uF 20%
    可用性
    庫存:
    Available
    訂購:
    1989
    輸入數量:
    IRLZ34NSTRLPBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$1.21
    US$1.21
    10
    US$1.04
    US$10.40
    100
    US$0.80
    US$79.90
    500
    US$0.71
    US$353.00
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