STGW60H65DFB-4

Mfr. #:: STGW60H65DFB-4
製造商:: STMicroelectronics
描述:: IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
生命週期:: 製造商新產品
數據表:: STGW60H65DFB-4 數據表
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更多信息:: STGW60H65DFB-4 更多信息 STGW60H65DFB-4 Product Details

產品屬性
屬性值

製造商：: 意法半導體

產品分類：: IGBT晶體管

技術：: 矽

包裝/案例：: TO-247-4

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 650 V

集電極-發射極飽和電壓：: 1.6 V

最大柵極發射極電壓：: 20 V

25 C 時的連續集電極電流：: 80 A

Pd - 功耗：: 283 W

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

系列：: STGW60H65DFB-4

品牌：: 意法半導體

柵極-發射極漏電流：: 250 uA

產品類別：: IGBT晶體管

出廠包裝數量：: 600

子類別：: IGBT

Tags: STGW60H65DF, STGW60H65D, STGW60H65, STGW60H, STGW6, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGW60H65DFB-4 描述

***ical: Trench gate field-stop IGBT, HB series650 V, 60 A high speed

***et Europe: PTD HIGH VOLTAGE

***ark: IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:4Pins; RoHS Compliant: Yes

***ment14 APAC: Prices include import duty and tax. IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:4Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)

***nell: TBGI, SINGOLO, 650V, 80A, TO-247; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:375W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:4Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)

Market price

型號	製造商	描述	庫存	價格
STGW60H65DFB-4 DISTI # STGW60H65DFB-4-ND	STMicroelectronics	IGBT RoHS: Not compliant Min Qty: 600 Container: Tube	Temporarily Out of Stock	600:$5.6963
STGW60H65DFB-4 DISTI # STGW60H65DFB-4	STMicroelectronics	PTD HIGH VOLTAGE (Alt: STGW60H65DFB-4) RoHS: Compliant Min Qty: 1	Europe - 0	500:€4.5900 1000:€4.5900 100:€4.6900 50:€4.7900 25:€4.8900 10:€5.0900 1:€5.1900
STGW60H65DFB-4 DISTI # STGW60H65DFB-4	STMicroelectronics	PTD HIGH VOLTAGE - Trays (Alt: STGW60H65DFB-4) RoHS: Compliant Min Qty: 600 Container: Tray	Americas - 0	6000:$4.1900 3000:$4.2900 1800:$4.3900 1200:$4.4900 600:$4.5900
STGW60H65DFB-4 DISTI # 48AC3296	STMicroelectronics	PTD HIGH VOLTAGE	0	1:$4.3800
STGW60H65DFB-4 DISTI # 511-STGW60H65DFB-4	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed	0	1:$8.3300 10:$7.5300 25:$7.1800 100:$6.2300 250:$5.9600 500:$5.4300 1000:$4.7300
STGW60H65DFB-4 DISTI # 2778105	STMicroelectronics	IGBT, SINGLE, 650V, 80A, TO-247 RoHS: Compliant	74	250:$7.3700 100:$7.9000 50:$8.8700 10:$9.8800 5:$11.1400 1:$12.7800
STGW60H65DFB-4 DISTI # 2778105	STMicroelectronics	IGBT, SINGLE, 650V, 80A, TO-247	74	100:£4.5100 50:£4.8600 10:£5.2100 5:£5.6200 1:£6.0300

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