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MT41K512M16HA-107

MT41K512M16HA-107
Mfr. #:
MT41K512M16HA-107
製造商:
Alliance Memory
描述:
DRAM 8G 1.35V 512Mx16 933MHz DDR3 0C-90C
生命週期:
製造商新產品
數據表:
MT41K512M16HA-107 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
MT41K512M16HA-107 更多信息
產品屬性
屬性值
製造商：
聯盟記憶
產品分類：
動態隨機存取存儲器
RoHS：
Y
類型：
SDRAM - DDR3L
數據總線寬度：
16 bit
組織：
512 M x 16
包裝/案例：
FBGA-96
內存大小：
8 Gbit
最大時鐘頻率：
933 MHz
電源電壓 - 最大值：
1.45 V
電源電壓 - 最小值：
1.283 V
電源電流 - 最大值：
91 mA
最低工作溫度：
0 C
最高工作溫度：
+ 95 C
系列：
MT41K
打包：
托盤
品牌：
聯盟記憶
安裝方式：
貼片/貼片
濕氣敏感：
是的
產品類別：
動態隨機存取存儲器
出廠包裝數量：
170
子類別：
內存和數據存儲
商品名：
美光
第 # 部分別名：
MT41K512M16HA-107:A
Tags
MT41K512M16HA-10, MT41K512M16HA-1, MT41K512M16H, MT41K512M1, MT41K5, MT41K, MT41, MT4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**b
    E**b
    BY

    Delivery is very fast, intact, the driver for wines 10x64 was found-works.

    2019-06-12
    J***y
    J***y
    SK

    very good

    2019-03-24
DRAM
Alliance Memory DDR1, SDRAM, and DRAM ranges have high-speed data rates, with memory sizes from 64M to 512M. The memory has commercial (0°C~70°C) and industrial (-40°C~85°C) temperatures. Other features include clock frequency range of 133MHz to 167MHz, data bus width range of 8-bit to 64-bit, with an access time of 5.4ns. Available in TSOP and BGA packages.
MT41x DDR3 SDRAMs
Alliance Memory MT41x DDR3 SDRAMs use double data rate architecture with an interface to transfer two data words per clock cycle at I/O pins. The MT41x DDR3's double data rate architecture is an 8n-prefetch architecture that helps to achieve high-speed operations. These SDRAMs operate from CK and CK# differential clock inputs. The MT41x DDR3 employs a burst-orientated approach to read and write with access starting at the selected location and continuing in a programmed sequence. These SDRAMs use READ and WRITE BL8 and BC4. The MT41x DDR3 SRAMs are able to carry out concurrent operations due to their pipelined and multibank architecture. This helps in providing high bandwidth by hiding row precharge and activation time. These SDRAMs feature self-refresh mode, power-saving mode, and power-down mode.
DDR3L SDRAM
Alliance Memory DDR3L SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding  n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
圖片 型號 描述
MT41K512M8V00HWC1

Mfr.#: MT41K512M8V00HWC1

OMO.#: OMO-MT41K512M8V00HWC1

 DRAM DDR3 4G Die 512MX8
MT41K512M8DA-107:P

Mfr.#: MT41K512M8DA-107:P

OMO.#: OMO-MT41K512M8DA-107-P

 DRAM DDR3 4G 512MX8 FBGA
MT41K512M8DA-107 AIT:P

Mfr.#: MT41K512M8DA-107 AIT:P

OMO.#: OMO-MT41K512M8DA-107-AIT-P

 DRAM DDR3 4G 512MX8 FBGA
MT41K512M16HA-125:A TR

Mfr.#: MT41K512M16HA-125:A TR

OMO.#: OMO-MT41K512M16HA-125-A-TR-MICRON-TECHNOLOGY

 IC DRAM 8G PARALLEL 96FBGA
MT41K512M8V00HWC1-N002

Mfr.#: MT41K512M8V00HWC1-N002

OMO.#: OMO-MT41K512M8V00HWC1-N002-MICRON-TECHNOLOGY

 IC DRAM 4G PARALLEL
MT41K512M8V90BWC1

Mfr.#: MT41K512M8V90BWC1

OMO.#: OMO-MT41K512M8V90BWC1-MICRON-TECHNOLOGY

 IC DRAM 4G PARALLEL
MT41K512M8DA-107 IT:P T

Mfr.#: MT41K512M8DA-107 IT:P T

OMO.#: OMO-MT41K512M8DA-107-IT-P-T-1190

 全新原裝
MT41K512M8RH-107:E

Mfr.#: MT41K512M8RH-107:E

OMO.#: OMO-MT41K512M8RH-107-E-MICRON-TECHNOLOGY

 IC DRAM 4G PARALLEL 78FBGA
MT41K512M8RH-125 AIT:E

Mfr.#: MT41K512M8RH-125 AIT:E

OMO.#: OMO-MT41K512M8RH-125-AIT-E-MICRON-TECHNOLOGY

 IC DRAM 4G PARALLEL 78FBGA
MT41K512M8RH-125:J

Mfr.#: MT41K512M8RH-125:J

OMO.#: OMO-MT41K512M8RH-125-J-230

 DRAM Chip DDR3L SDRAM 4G-Bit 512Mx8 1.35V 78-Pin F-BGA (Alt: MT41K512M8RH-125:J)
可用性
庫存:
Available
訂購:
2500
輸入數量:
MT41K512M16HA-107的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$27.39
US$27.39
5
US$26.10
US$130.50
10
US$25.51
US$255.10
25
US$25.23
US$630.75
50
US$24.60
US$1 230.00
100
US$21.60
US$2 160.00
250
US$20.31
US$5 077.50
500
US$19.47
US$9 735.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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