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FCP11N60N

FCP11N60N
Mfr. #:
FCP11N60N
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET SupreMOS 11A
生命週期:
製造商新產品
數據表:
FCP11N60N 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
10.8 A
Rds On - 漏源電阻：
255 mOhms
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
94 W
配置：
單身的
商品名：
超級MOS
打包：
管子
高度：
16.3 mm
長度：
10.67 mm
系列：
FCP11N60N
晶體管類型：
1 N-Channel
類型：
N 溝道 MOSFET
寬度：
4.7 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
13.5 S
秋季時間：
10 ns
產品類別：
MOSFET
上升時間：
9.1 ns
出廠包裝數量：
800
子類別：
MOSFET
典型關斷延遲時間：
42 ns
典型的開啟延遲時間：
13.6 ns
單位重量：
0.063493 oz
Tags
FCP11N60N, FCP11N60, FCP11N, FCP11, FCP1, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220
***Components
FCP11N60N N-Channel MOSFET, 10.8 A, 600 V SupreMOS, 3-Pin TO-220 ON Semiconductor
***p One Stop Global
Trans MOSFET N-CH 600V 10.8A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
FCH47N60 Series 600 V 0.38 Ohms Flange Mount N-Channel MOSFET - TO-220
***i-Key
MOSFET N-CH 600V 10.8A TO220
***ter Electronics
600V N-CHANNEL MOSFET SUPREMOS
***ark
Sm 600V 299Mohm F To220 Rohs Compliant: Yes
***inecomponents.com
SupreMOS 11A in TO220
***ment14 APAC
MOSFET,N CH,600V,10.8A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:10.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.255ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
型號 製造商 描述 庫存 價格
FCP11N60N
DISTI # FCP11N60N-ND		ON SemiconductorMOSFET N-CH 600V 10.8A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		744In Stock
  • 1600:$1.5152
  • 800:$1.6511
  • 100:$2.3513
  • 10:$2.9260
  • 1:$3.2400
FCP11N60N-F102
DISTI # FCP11N60N-F102-ND		ON SemiconductorMOSFET N-CH 600V 10.8A TO220F
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$1.7034
FCP11N60N
DISTI # FCP11N60N		ON SemiconductorTrans MOSFET N-CH 600V 10.8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FCP11N60N)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 23
  • 800:$2.3900
  • 1600:$2.3900
  • 3200:$2.3900
  • 4800:$2.3900
  • 8000:$2.3900
FCP11N60N
DISTI # FCP11N60N		ON SemiconductorTrans MOSFET N-CH 600V 10.8A 3-Pin(3+Tab) TO-220AB Rail (Alt: FCP11N60N)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.5900
  • 10:€1.4900
  • 25:€1.2900
  • 50:€1.2900
  • 100:€1.1900
  • 500:€1.1900
  • 1000:€1.0900
FCP11N60N-F102
DISTI # FCP11N60N-F102		ON SemiconductorN-Channel SupreMOS MOSFET 600V 10.8A 299mOhm 3-Pin TO-220 Tube - Rail/Tube (Alt: FCP11N60N-F102)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$1.1139
  • 1600:$1.1059
  • 3200:$1.0919
  • 4800:$1.0779
  • 8000:$1.0519
FCP11N60N-F102
DISTI # FCP11N60N-F102		ON SemiconductorN-Channel SupreMOS MOSFET 600V 10.8A 299mOhm 3-Pin TO-220 Tube (Alt: FCP11N60N-F102)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.7900
  • 10:€1.4900
  • 25:€1.1900
  • 50:€1.0900
  • 100:€1.0900
  • 500:€1.0900
  • 1000:€1.0900
FCP11N60N-F102
DISTI # 48AC0856		ON SemiconductorSM 600V 299MOHM F TO220 / TUBE0
  • 1:$2.5800
  • 100:$2.1100
  • 250:$1.9300
  • 500:$1.8000
  • 1000:$1.6900
FCP11N60N.
DISTI # 27AC5649		Fairchild Semiconductor CorporationSM 600V 299MOHM F TO220 ROHS COMPLIANT: YES23
  • 1:$2.9000
  • 10:$2.4800
  • 100:$2.0000
  • 500:$1.7700
  • 1000:$1.4800
  • 5000:$1.3400
  • 10000:$1.2900
FCP11N60NFairchild Semiconductor CorporationPower Field-Effect Transistor, 10.8A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		17552
  • 1000:$1.4000
  • 500:$1.4700
  • 100:$1.5300
  • 25:$1.5900
  • 1:$1.7200
FCP11N60N
DISTI # 512-FCP11N60N		ON SemiconductorMOSFET SupreMOS 11A
RoHS: Compliant		724
  • 1:$2.8000
  • 10:$2.3800
  • 100:$1.9000
  • 500:$1.6700
  • 1000:$1.3800
  • 2500:$1.2900
  • 5000:$1.2400
FCP11N60N-F102
DISTI # 512-FCP11N60N_F102		ON SemiconductorMOSFET FCP11N60N, in TO220 F102 T/F option0
  • 800:$1.7200
FCP11N60N
DISTI # 7396140P		ON SemiconductorMOSFET N CHANNEL 600V 10.8A TO220AB, TU28
  • 10:£1.2900
  • 20:£1.2400
  • 50:£1.2000
  • 250:£1.0200
FCP11N60N
DISTI # 1885769		ON SemiconductorMOSFET,N CH,600V,10.8A,TO220
RoHS: Compliant		0
  • 1:$4.4400
  • 10:$3.7700
  • 100:$3.0100
  • 500:$2.6500
  • 1000:$2.1900
  • 2500:$2.0400
  • 5000:$1.9700
  • 10000:$1.8800
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可用性
庫存:
281
訂購:
2264
輸入數量:
FCP11N60N的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$2.72
US$2.72
10
US$2.31
US$23.10
100
US$2.00
US$200.00
250
US$1.90
US$475.00
500
US$1.70
US$850.00
1000
US$1.43
US$1 430.00
2500
US$1.36
US$3 400.00
5000
US$1.31
US$6 550.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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