NGTB30N65IHL2WG

Mfr. #:: NGTB30N65IHL2WG
製造商:: ON Semiconductor
描述:: IGBT Transistors 650V/30A FAST IGBT FSII T
生命週期:: 製造商新產品
數據表:: NGTB30N65IHL2WG 數據表
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更多信息:: NGTB30N65IHL2WG 更多信息

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO-247-3

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 650 V

集電極-發射極飽和電壓：: 1.6 V

最大柵極發射極電壓：: 20 V

25 C 時的連續集電極電流：: 60 A

Pd - 功耗：: 300 W

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

打包：: 管子

連續集電極電流 Ic 最大值：: 60 A

品牌：: 安森美半導體

柵極-發射極漏電流：: 100 nA

產品類別：: IGBT晶體管

出廠包裝數量：: 30

子類別：: IGBT

單位重量：: 0.211644 oz

Tags: NGTB30N6, NGTB30, NGTB3, NGTB, NGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB30N65IHL2WG 描述

***ure Electronics: NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247

***et: Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube

***emi: IGBT, 650V 30A FS2 Induction Heating

***ark: 650V/30A FAST IGBT FSII TO-247 / TUBE ROHS COMPLIANT: YES

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel

***i-Key: IGBT TRENCH/FS 650V 60A TO247-3

***ark: Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube

***icroelectronics: Trench gate field-stop IGBT M series, 650 V 30 A low loss

***nell: IGBT, SINGLE, 650V, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi

***ical: Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube

***nell: IGBT, SINGLE, N-CH, 650V, 60A, TO-247AC; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No

***ineon: Benefits: Low VCE(ON) and Switching Losses; 5.5s Short Circuit SOA; Square RBSOA; Maximum Junction Temperature 175C; Positive VCE(ON) Temperature Coefficient; Lead-Free, RoHs compliant

***ical: Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel

***ark: IGBT, SINGLE, 650V, 60A, TO-247AC

***ineon: Target Applications: Pump; Solar; UPS; Welding

***ment14 APAC: TRANSISTOR, BIPOLAR, N CHANNEL, 650V, TO-247AC

***or: IGBT W/ULTRAFAST SOFT RECOVERY D

***S: French Electronic Distributor since 1988

***ure Electronics: IRG4PC40SPbF Series 600 V 31 A N-Channel Standard Speed IGBT - TO-220AC

***p One Stop Global: Trans IGBT Chip N-CH 600V 60A 160000mW 3-Pin(3+Tab) TO-247AC Tube

***ineon SCT: 600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 940 ns Power dissipation: 160 W

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):1.5V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ment14 APAC: IGBT, 600V, 60A, TO-247AC; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:60A; Current Temperature:25°C; Device Marking:IRG4PC40SPbF; Fall Time Max:380ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***icroelectronics: Trench gate field-stop IGBT M series, 650 V 30 A low loss

***ical: Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube

***ronik: IGBT 650V 30A 1,55V TO247-3 RoHSconf

***el Electronic: Cap Ceramic 470pF 50V C0G 5% Pad SMD 0805 125C Automotive T/R

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247

***icroelectronics SCT: Short-circuit rugged IGBT, TO-247, Tube

NGTB30N65IHL2WG 更多信息

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Market price

型號	製造商	描述	庫存	價格
NGTB30N65IHL2WG DISTI # NGTB30N65IHL2WG-ND	ON Semiconductor	IGBT 600V 70A 300W TO247 RoHS: Compliant Min Qty: 120 Container: Tube	Temporarily Out of Stock	120:$3.3169
NGTB30N65IHL2WG DISTI # NGTB30N65IHL2WG	ON Semiconductor	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB30N65IHL2WG) RoHS: Compliant Min Qty: 210 Container: Tube	Americas - 0	210:$2.0900 270:$2.0900 480:$1.9900 1050:$1.9900 2100:$1.9900
NGTB30N65IHL2WG	ON Semiconductor	RoHS: Not Compliant	1159	1000:$2.6500 500:$2.7900 100:$2.9000 25:$3.0300 1:$3.2600
NGTB30N65IHL2WG DISTI # 863-NGTB30N65IHL2WG	ON Semiconductor	IGBT Transistors 650V/30A FAST IGBT FSII T RoHS: Compliant	184	1:$4.3800 10:$3.7200 100:$3.2300 250:$3.0600 500:$2.7500 1000:$2.3200 2500:$2.2000