FM28V202A-TGTR

Mfr. #:: FM28V202A-TGTR
製造商:: Cypress Semiconductor
描述:: F-RAM 2Mb, 60Mhz 128K x 16 FRAM
生命週期:: 製造商新產品
數據表:: FM28V202A-TGTR 數據表
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ECAD Model:
更多信息:: FM28V202A-TGTR 更多信息 FM28V202A-TGTR Product Details

產品屬性
屬性值

製造商：: 賽普拉斯半導體

產品分類：: 內存

RoHS：: Y

安裝方式：: 貼片/貼片

包裝/案例：: TSOP-44

內存大小：: 2 Mbit

接口類型：: 平行線

組織：: 128 k x 16

電源電壓 - 最小值：: 2 V

電源電壓 - 最大值：: 3.6 V

最低工作溫度：: - 40 C

最高工作溫度：: + 85 C

系列：: FM28V202

打包：: 捲軸

訪問時間：: 60 ns

品牌：: 賽普拉斯半導體

濕氣敏感：: 是的

工作電源電壓：: 3.3 V

產品類別：: 隨機存取存儲器

出廠包裝數量：: 1000

子類別：: 內存和數據存儲

Tags: FM28V202A-T, FM28V202, FM28V2, FM28V, FM28, FM2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FM28V202A-TGTR 描述

***ure Electronics: FM28V202A Series 2 Mb (128 K × 16) 3.6 V F-RAM Memory - TSPO II-44

***ress Semiconductor SCT: F-RAM (Nonvolatile Ferroelectric RAM), 2048 Kb Density, SOP-44, RoHS

***et: NVRAM FRAM Parallel 2M-Bit 3.3V 44-Pin TSOP-II T/R

***ical: 2-Mbit (128 K X 16) F-RAM Memory

***i-Key: IC FRAM 2MBIT PARALLEL 44TSOP II

FM28V202A-TGTR 更多信息

Parallel F-RAM Non-Volatile Memory: Cypress' Parallel F-RAM Non-Volatile Memory operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. These F-RAMs read and write similar to a standard SRAM. A ferroelectric random access memory or F-RAM is non-volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. These features make these devices ideal for non-volatile memory applications requiring frequent or rapid writes.Learn More

Market price

型號	製造商	描述	庫存	價格
FM28V202A-TGTR DISTI # FM28V202A-TGTR-ND	Cypress Semiconductor	IC FRAM 2M PARALLEL 44TSOP II RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$22.8232
FM28V202A-TGTR DISTI # 39Y5241	Cypress Semiconductor	REEL / F-RAM Memory Parallel	0	1:$35.7800
FM28V202A-TG DISTI # 727-FM28V202A-TG	Cypress Semiconductor	F-RAM 2Mb, 60Mhz 128K x 16 FRAM RoHS: Compliant	552	1:$31.0200 5:$30.0000 10:$29.0900 25:$28.1600 50:$27.1200 100:$23.9900
FM28V202A-TGTR DISTI # 727-FM28V202A-TGTR	Cypress Semiconductor	F-RAM 2Mb, 60Mhz 128K x 16 FRAM RoHS: Compliant	0	1000:$22.9200

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