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FCP650N80Z

FCP650N80Z
Mfr. #:
FCP650N80Z
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 800V 10A NChn MOSFET SuperFET II
生命週期:
製造商新產品
數據表:
FCP650N80Z 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
FCP650N80Z 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
800 V
Id - 連續漏極電流：
10 A
Rds On - 漏源電阻：
650 mOhms
Vgs th - 柵源閾值電壓：
2.5 V
Vgs - 柵源電壓：
20 V, 30 V
Qg - 門電荷：
27 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
162 W
配置：
單身的
頻道模式：
增強
商品名：
超級場效應晶體管 II
打包：
管子
高度：
16.3 mm
長度：
10.67 mm
系列：
FCP650N80Z
晶體管類型：
1 N-Channel
寬度：
4.7 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
7.8 S
秋季時間：
3.4 ns
產品類別：
MOSFET
上升時間：
11 ns
出廠包裝數量：
800
子類別：
MOSFET
典型關斷延遲時間：
40 ns
典型的開啟延遲時間：
17 ns
單位重量：
0.063493 oz
Tags
FCP6, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, 800 V, 10 A, 650 mΩ, TO-220
***et
SuperFET2 800V 650mOhm Zener embedded, TO220 PKG
***ical
Trans MOSFET N-CH 800V 10A Tube
***i-Key
SUPERFET2 800V 650MOHM ZENER
***ark
MOSFET, N-CH, 800V, 10A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 10A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:162W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CAN-N, 800V, 10A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:10A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.53ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:162W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Inaddition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET IIMOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power andindustrial power applications.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
型號 製造商 描述 庫存 價格
FCP650N80Z
DISTI # V99:2348_16116295		ON SemiconductorSUPERFET2 800V 650MOHM ZENER E765
  • 2500:$0.9005
  • 1000:$0.9457
  • 500:$1.1369
  • 100:$1.2951
  • 10:$1.6202
  • 1:$2.0951
FCP650N80Z
DISTI # V36:1790_16116295		ON SemiconductorSUPERFET2 800V 650MOHM ZENER E0
  • 800000:$0.7616
  • 400000:$0.7650
  • 80000:$1.1270
  • 8000:$1.8050
  • 800:$1.9200
FCP650N80Z
DISTI # FCP650N80Z-ND		ON SemiconductorMOSFET N-CH 800V 10A
RoHS: Compliant
Min Qty: 1
Container: Tube		699In Stock
  • 5600:$0.8924
  • 3200:$0.9268
  • 800:$1.2014
  • 100:$1.4622
  • 25:$1.7164
  • 10:$1.8190
  • 1:$2.0300
FCP650N80Z
DISTI # 25895793		ON SemiconductorSUPERFET2 800V 650MOHM ZENER E765
  • 7:$2.0951
FCP650N80Z
DISTI # FCP650N80Z		ON SemiconductorSuperFET2 800V 650mOhm Zener embedded, TO220 PKG (Alt: FCP650N80Z)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.8119
  • 500:€0.8419
  • 100:€0.8739
  • 50:€0.9089
  • 25:€0.9469
  • 10:€1.0329
  • 1:€1.1369
FCP650N80Z
DISTI # FCP650N80Z		ON SemiconductorSuperFET2 800V 650mOhm Zener embedded, TO220 PKG - Rail/Tube (Alt: FCP650N80Z)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 8000:$0.8069
  • 4800:$0.8269
  • 3200:$0.8379
  • 1600:$0.8489
  • 800:$0.8539
FCP650N80Z
DISTI # 512-FCP650N80Z		ON SemiconductorMOSFET 800V 10A NChn MOSFET SuperFET II
RoHS: Compliant		1414
  • 1:$1.9200
  • 10:$1.6300
  • 100:$1.3000
  • 500:$1.1400
  • 1000:$0.9470
  • 2500:$0.8820
  • 5000:$0.8490
FCP650N80Z
DISTI # 2565209		ON SemiconductorMOSFET, N-CH, 800V, 10A, TO-220-3
RoHS: Compliant		676
  • 1600:$1.6100
  • 800:$1.7400
  • 100:$2.4800
  • 10:$3.0900
  • 1:$3.4100
FCP650N80Z
DISTI # 2565209		ON SemiconductorMOSFET, N-CH, 800V, 10A, TO-220-3676
  • 500:£0.7830
  • 250:£0.8400
  • 100:£0.8960
  • 10:£1.1400
  • 1:£1.6700
圖片 型號 描述
BD437TG

Mfr.#: BD437TG

OMO.#: OMO-BD437TG

 Bipolar Transistors - BJT 4A 45V 36W NPN
BD676G

Mfr.#: BD676G

OMO.#: OMO-BD676G

 Darlington Transistors 4A 45V 40W PNP
74437429203680

Mfr.#: 74437429203680

OMO.#: OMO-74437429203680

 Fixed Inductors WE-HCF 2920 68uH 20% 11.2A 22.2mOhm
VR37000002004FA100

Mfr.#: VR37000002004FA100

OMO.#: OMO-VR37000002004FA100

 Metal Film Resistors - Through Hole 1/2Watt 2Mohms 1% VR37
FG16C0G1H104JNT06

Mfr.#: FG16C0G1H104JNT06

OMO.#: OMO-FG16C0G1H104JNT06

 Multilayer Ceramic Capacitors MLCC - Leaded RAD 50V 0.1uF C0G 5% LS:2.5mm
860020773013

Mfr.#: 860020773013

OMO.#: OMO-860020773013

 Aluminum Electrolytic Capacitors - Radial Leaded WCAP-ATG5 63V 47uF 20% ESR=1151mOhms
74437529203680

Mfr.#: 74437529203680

OMO.#: OMO-74437529203680

 Fixed Inductors WE-HCF 2920 68uH 20% 17A 10.3mOhm
VR37000002004FA100

Mfr.#: VR37000002004FA100

OMO.#: OMO-VR37000002004FA100-VISHAY

 Metal Film Resistors - Through Hole 1/2Watt 2Mohms 1% VR37
FCP220N80

Mfr.#: FCP220N80

OMO.#: OMO-FCP220N80-ON-SEMICONDUCTOR

 MOSFET N-CH 800V 23A
BD437TG

Mfr.#: BD437TG

OMO.#: OMO-BD437TG-ON-SEMICONDUCTOR

 Bipolar Transistors - BJT 4A 45V 36W NPN
可用性
庫存:
Available
訂購:
1984
輸入數量:
FCP650N80Z的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.92
US$1.92
10
US$1.63
US$16.30
100
US$1.30
US$130.00
500
US$1.14
US$570.00
1000
US$0.95
US$947.00
2500
US$0.88
US$2 205.00
5000
US$0.85
US$4 245.00
10000
US$0.82
US$8 170.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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