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BSS306NH6327XTSA1

BSS306NH6327XTSA1
Mfr. #:
BSS306NH6327XTSA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 30V 2.3A SOT-23-3
生命週期:
製造商新產品
數據表:
BSS306NH6327XTSA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
BSS306NH6327XTSA1 DatasheetBSS306NH6327XTSA1 Datasheet (P4-P6)BSS306NH6327XTSA1 Datasheet (P7-P9)
ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
SOT-23-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
30 V
Id - 連續漏極電流：
2.3 A
Rds On - 漏源電阻：
57 mOhms
Vgs th - 柵源閾值電壓：
1.2 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
1.5 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
500 mW (1/2 W)
配置：
單身的
頻道模式：
增強
資質：
AEC-Q101
打包：
捲軸
高度：
1.1 mm
長度：
2.9 mm
系列：
BSS306
晶體管類型：
1 N-Channel
寬度：
1.3 mm
品牌：
英飛凌科技
正向跨導 - 最小值：
5 S
秋季時間：
1.4 ns
產品類別：
MOSFET
上升時間：
2.3 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
8.3 ns
典型的開啟延遲時間：
4.4 ns
第 # 部分別名：
BSS306N BSS36NH6327XT H6327 SP000928940
單位重量：
0.000282 oz
Tags
BSS306NH, BSS306, BSS30, BSS3, BSS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***itex
Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.041ohm; 0.5W; -55+150 deg.C; SMD; SOT23
***Yang
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***ure Electronics
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***p One Stop
Trans MOSFET N-CH 30V 2.3A Automotive 3-Pin SOT-23 T/R
***ment14 APAC
MOSFET, N CH, 30V, 2.3A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Source Voltage Vds:30V; On Resistance
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.3 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) Ohm = 93 / Gate-Source Voltage V = 20 / Fall Time ns = 1.4 / Rise Time ns = 2.3 / Turn-OFF Delay Time ns = 8.3 / Turn-ON Delay Time ns = 4.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Power Dissipation (Pd) mW = 500
***emi
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.9A, 90mΩ
***enic
30V 1.9A 500mW 60m´Î@10V2.2A 2V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***trelec
MOSFET Operating temperature: -55...150 °C Marking: 357 Drive: logic level Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 500 mW
***ment14 APAC
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.9A; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:357; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
***eco
Transistor MOSFET Negative Channel 30 Volt 1.7A 3-Pin SuperSOT T/R
***emi
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***ure Electronics
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***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.7 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 125 / Gate-Source Voltage V = 20 / Fall Time ns = 10 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
***rchild Semiconductor
SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
***itex
Transistor: P-MOSFET; unipolar; -30V; -2A; 0.08ohm; 0.5W; -55+150 deg.C; SMD; SOT23
***eco
Transistor MOSFET P Channel 30 Volt 2 Amp 3 Pin Supersot Tape and Reel
***Yang
Trans MOSFET P-CH 30V 2A 3-Pin SuperSOT T/R - Product that comes on tape, but is not reeled
*** Electronics
FSC FDN360P TRANS MOSFET P-CH 30V 2A 3-PIN SUPERSO T FETMOSFET SOT23
***ource
FDN360P MOSFET P-Channel -30V -2A 0.060ohm SOT-23 marking 360
***enic
30V 2A 500mW 80m´Î@10V2A 3V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
***trelec
MOSFET Operating temperature: -55...150 °C Marking: 360 Drive: logic level Housing type: SOT-23 Polarity: P Power dissipation: 500 mW
***rchild Semiconductor
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***ure Electronics
ZXMN3A01 Series 30 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3
***ow.cn
Trans MOSFET N-CH 30V 1.8A 3-Pin SOT-23 T/R
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***el Electronic
MOSFET N-Channel 600V Power MDmesh
***nell
MOSFET, N SOT-23 REEL 3K; Transistor Polarity:N; Max Current Id:2A; Max Voltage Vds:30V; On State Resistance:0.12ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:806mW; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:SOT-23; No. of Pins:3; Case Style:SOT-23; Cont Current Id:2A; Current Temperature:25°C; Max Junction Temperature Tj:150°C; Max On State Resistance:0.12ohm; Max Power Dissipation Ptot:625mW; Min Junction Temperature, Tj:-55°C; Min Voltage Vgs th:1V; No. of Transistors:1; Power Dissipation Pd:625mW; Pulse Current Idm:8A; Reel Quantity:3000; SMD Marking:7N3; Tape Width:8mm; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:30V; Typ Voltage Vgs th:1V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
P-Channel 30 V, 0.048 Ohm typ., 2 A STripFET H6 Power MOSFET in a SOT-23 package
***ure Electronics
Single P-Channel 30 V 0.35 W 6 nC Silicon Surface Mount Mosfet - SOT-23
***ark
MOSFET, P-CH, -30V, -2A, SOT-23; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
***nell
MOSFET, P-CH, -30V, -2A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -2A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.048ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 350mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: STripFET H6 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***ure Electronics
N-Channel 30 V 28 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
***ical
Trans MOSFET N-CH 30V 5.8A Automotive 3-Pin SOT-23 T/R
***ment14 APAC
MOSFET,N CH,30V,5.8A,SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Source Voltage Vds:30V; On Resistance
***nell
MOSFET,N CH,30V,5.8A,SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 1.4W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 5.8A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 20V
型號 製造商 描述 庫存 價格
BSS306NH6327XTSA1
DISTI # V72:2272_06391721		Infineon Technologies AGTrans MOSFET N-CH 30V 2.3A Automotive 3-Pin SOT-23 T/R
RoHS: Compliant		12889
  • 6000:$0.0868
  • 3000:$0.0886
  • 1000:$0.1014
  • 500:$0.1131
  • 250:$0.1257
  • 100:$0.1397
  • 25:$0.3000
  • 10:$0.3334
  • 1:$0.4702
BSS306NH6327XTSA1
DISTI # V36:1790_06391721		Infineon Technologies AGTrans MOSFET N-CH 30V 2.3A Automotive 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 9000000:$0.0656
  • 4500000:$0.0658
  • 900000:$0.0798
  • 90000:$0.1027
  • 9000:$0.1064
BSS306NH6327XTSA1
DISTI # BSS306NH6327XTSA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 2.3A SOT23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		29839In Stock
  • 1000:$0.1218
  • 500:$0.1583
  • 100:$0.2314
  • 10:$0.3710
  • 1:$0.4900
BSS306NH6327XTSA1
DISTI # BSS306NH6327XTSA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 2.3A SOT23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		29839In Stock
  • 1000:$0.1218
  • 500:$0.1583
  • 100:$0.2314
  • 10:$0.3710
  • 1:$0.4900
BSS306NH6327XTSA1
DISTI # BSS306NH6327XTSA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 2.3A SOT23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		27000In Stock
  • 75000:$0.0769
  • 30000:$0.0857
  • 15000:$0.0916
  • 6000:$0.1005
  • 3000:$0.1064
BSS306NH6327XTSA1
DISTI # 33955283		Infineon Technologies AGTrans MOSFET N-CH 30V 2.3A Automotive 3-Pin SOT-23 T/R
RoHS: Compliant		30000
  • 18000:$0.0515
  • 12000:$0.0537
  • 6000:$0.0561
  • 3000:$0.0627
BSS306NH6327XTSA1
DISTI # 31701565		Infineon Technologies AGTrans MOSFET N-CH 30V 2.3A Automotive 3-Pin SOT-23 T/R
RoHS: Compliant		12889
  • 6000:$0.0868
  • 3000:$0.0886
  • 1000:$0.1014
  • 500:$0.1131
  • 250:$0.1257
  • 100:$0.1397
  • 99:$0.3000
BSS306NH6327XTSA1
DISTI # BSS306NH6327XTSA1		Infineon Technologies AGTrans MOSFET N-CH 30V 2.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BSS306NH6327XTSA1)
RoHS: Compliant
Min Qty: 9000
Container: Reel		Americas - 0
  • 90000:$0.0569
  • 45000:$0.0579
  • 27000:$0.0599
  • 18000:$0.0619
  • 9000:$0.0639
BSS306NH6327XTSA1
DISTI # SP000928940		Infineon Technologies AGTrans MOSFET N-CH 30V 2.3A 3-Pin SOT-23 T/R (Alt: SP000928940)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.0569
  • 18000:€0.0619
  • 12000:€0.0679
  • 6000:€0.0769
  • 3000:€0.0909
BSS306NH6327XTSA1
DISTI # 85X4156		Infineon Technologies AGBipolar Pre-Biased / Digital Transistor, BRT, SOT-23 RoHS Compliant: Yes15580
  • 1000:$0.1140
  • 500:$0.1260
  • 250:$0.1370
  • 100:$0.1480
  • 50:$0.2060
  • 25:$0.2640
  • 10:$0.3220
  • 1:$0.4550
BSS306N H6327
DISTI # 726-BSS306NH6327XT		Infineon Technologies AGMOSFET N-Ch 30V 2.3A SOT-23-3
RoHS: Compliant		67351
  • 1:$0.4500
  • 10:$0.3190
  • 100:$0.1470
  • 1000:$0.1130
  • 3000:$0.0960
  • 9000:$0.0880
  • 24000:$0.0820
BSS306NH6327XTSA1
DISTI # 726-BSS306NH6327		Infineon Technologies AGMOSFET N-Ch 30V 2.3A SOT-23-3
RoHS: Compliant		14454
  • 1:$0.4500
  • 10:$0.3190
  • 100:$0.1470
  • 1000:$0.1130
  • 3000:$0.0960
  • 9000:$0.0880
  • 24000:$0.0820
BSS306NH6327XT
DISTI # 726-BSS306NH6327XTSA		Infineon Technologies AGMOSFET N-Ch 30V 2.3A SOT-23-3
RoHS: Compliant		2245
  • 1:$0.4500
  • 10:$0.3190
  • 100:$0.1470
  • 1000:$0.1130
  • 3000:$0.0960
  • 9000:$0.0880
  • 24000:$0.0820
  • 45000:$0.0740
  • 99000:$0.0710
BSS306NH6327XTSA1
DISTI # 8270137		Infineon Technologies AGINFINEON TRANS BSS306NH6327XT, RL3000
  • 6000:£0.0660
  • 3000:£0.0690
  • 1000:£0.0820
  • 250:£0.1090
BSS306NH6327XTSA1
DISTI # BSS306NH6327XTSA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,2.3A,0.5W,SOT23111
  • 3000:$0.0608
  • 1000:$0.0653
  • 250:$0.0752
  • 50:$0.0937
  • 10:$0.1086
BSS306NH6327XTSA1
DISTI # 2443468RL		Infineon Technologies AGMOSFET, N CH, 30V, 2.3A, SOT-23-3
RoHS: Compliant		0
  • 24000:$0.1270
  • 9000:$0.1360
  • 3000:$0.1480
  • 1000:$0.1740
  • 100:$0.2270
  • 10:$0.4910
  • 1:$0.6920
BSS306NH6327XTSA1
DISTI # 2443468		Infineon Technologies AGMOSFET, N CH, 30V, 2.3A, SOT-23-3
RoHS: Compliant		15580
  • 24000:$0.1270
  • 9000:$0.1360
  • 3000:$0.1480
  • 1000:$0.1740
  • 100:$0.2270
  • 10:$0.4910
  • 1:$0.6920
BSS306NH6327XTSA1
DISTI # 2443468		Infineon Technologies AGMOSFET, N CH, 30V, 2.3A, SOT-23-336530
  • 500:£0.0934
  • 250:£0.1130
  • 100:£0.1170
  • 25:£0.2690
  • 5:£0.2810
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可用性
庫存:
14
訂購:
1997
輸入數量:
BSS306NH6327XTSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$0.45
US$0.45
10
US$0.32
US$3.19
100
US$0.15
US$14.70
1000
US$0.11
US$113.00
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