APT40GR120B2SCD10

Mfr. #:: APT40GR120B2SCD10
製造商:: Microchip / Microsemi
描述:: IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
生命週期:: 製造商新產品
數據表:: APT40GR120B2SCD10 數據表
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產品屬性
屬性值

製造商：: 微芯片

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

打包：: 管子

品牌：: 微芯片/Microsemi

產品類別：: IGBT晶體管

出廠包裝數量：: 1

子類別：: IGBT

Tags: APT40GR120B, APT40GR, APT40G, APT40, APT4, APT

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

APT40GR120B2SCD10 描述

***ical: Trans IGBT Chip N-CH 1200V 88A 500000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: APT40GR120Bx Series 1200 V 88 A Flange Mount Ultra Fast NPT IGBT® - TO-247-3

***i-Key: IGBT 1200V 88A 500W TO247

***hardson RFPD: POWER IGBT TRANSISTOR

***el Nordic: Contact for details

***ical: Trans IGBT Chip N-CH 1200V 80A 429000mW Automotive 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: IHW40N120R3 Series 1200 V 80 A Through Hole Reverse conducting IGBT - PG-TO247-3

***nell: IGBT, SINGLE, 1.2KV, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 429W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of

***ineon: The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications

***ical: Trans IGBT Chip N=-CH 1200V 80A 555000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: FGH40T120 Series 1200 V 40 A Fs Trench IGBT Through Hole IGBT - TO-247-3

***rchild Semiconductor: Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

***p One Stop Global: Trans IGBT Chip N-CH 1200V 80A 652000mW 3-Pin(3+Tab) TO-247 Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel

***ure Electronics: IGBT Transistors 1200V/40A FAST IGBT FSII

***ment14 APAC: TRANSISTOR, IGBT, 2V, 80A, TO-247-3

***i-Key: IGBT TRENCH/FS 1200V 80A TO247

***DA Technology Co., Ltd.: Product Description Demo for Development.

***nell: TRANSISTOR, IGBT, 2V, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 535W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pi

***ical: Trans IGBT Chip N-CH 1200V 100A 535000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel

***ment14 APAC: TRANSISTOR, IGBT, 2.2V, 100A, TO-247-3

***ure Electronics: IGBT Transistors 1200V/50A FAST IGBT FSII

***DA Technology Co., Ltd.: Product Description Demo for Development.

***nell: TRANSISTOR, IGBT, 2.2V, 100A, TO-247-3; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 535W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No.

***ical: Trans IGBT Chip N-CH 1200V 84A 290000mW 3-Pin(3+Tab) ISOPLUS 247

***el Electronic: IXYS SEMICONDUCTOR IXA55I1200HJ IGBT Single Transistor, 84 A, 2.1 V, 290 W, 1.2 kV, TO-247AD, 3 Pins

***nell: IGBT,1200V,84A,ISOPLUS247; DC Collector Current: 84A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 290W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 290W; Transistor Type: IGBT

***ure Electronics: APT25GR120B Series 1200 V 75 A Trench and Field Stop IGBT - TO-247-3

***et: Ultra Fast NPT IGBT N-Channel 1200V 75A 3-Pin TO-247

***el Electronic: Trans IGBT Chip N-CH 1.2KV 75A 3-Pin(3+Tab) TO-247

*** Stop Electro: Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel

Market price

型號	製造商	描述	庫存	價格
APT40GR120B2SCD10 DISTI # APT40GR120B2SCD10-ND	Microsemi Corporation	IGBT 1200V 88A 500W TO247 RoHS: Compliant Min Qty: 30 Container: Tube	Limited Supply - Call
APT40GR120B2SCD10 DISTI # 494-40GR120B2SCD10	Microchip Technology Inc	IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 RoHS: Compliant	30	1:$20.0400 10:$18.2200 25:$16.8500 50:$15.9400 100:$15.4800 250:$14.1200 500:$13.2000
APT40GR120B2SCD10 DISTI # APT40GR120B2SCD	Microsemi Corporation	POWER IGBT TRANSISTOR RoHS: Compliant	0	30:$12.1800 100:$11.8800 500:$11.7300

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	Mfr.#: APT40GR120B2SCD10 OMO.#: OMO-APT40GR120B2SCD10-MICROSEMI	IGBT 1200V 88A 500W TO247