IRL100HS121

IRL100HS121
Mfr. #:
IRL100HS121
製造商:
Infineon Technologies
描述:
MOSFET DIFFERENTIATED MOSFETS
生命週期:
製造商新產品
數據表:
IRL100HS121 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IRL100HS121 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
PQFN-6
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
100 V
Id - 連續漏極電流:
5.1 A
Rds On - 漏源電阻:
34 mOhms
Vgs th - 柵源閾值電壓:
1.1 V
Vgs - 柵源電壓:
10 V
Qg - 門電荷:
3.7 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
Pd - 功耗:
11.5 W
配置:
單身的
頻道模式:
增強
打包:
捲軸
晶體管類型:
1 N-Channel
品牌:
英飛凌科技
正向跨導 - 最小值:
15 S
秋季時間:
10.7 ns
產品類別:
MOSFET
上升時間:
21 ns
出廠包裝數量:
4000
子類別:
MOSFET
典型關斷延遲時間:
8.7 ns
典型的開啟延遲時間:
7.6 ns
第 # 部分別名:
SP001592836
Tags
IRL100, IRL10, IRL1, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 100V 5.1A 6-Pin PQFN EP T/R
***ment14 APAC
MOSFET, N-CH, 100V, 11A, 11.5W, PQFN
***ark
Trench >=100V Rohs Compliant: Yes
***ineon
Available in three different voltage classes (60V, 80V and 100V), Infineons new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving. | Summary of Features: Lowest FOM (R DS(on) x Q g/gd); Optimized Q g, C oss, and Q rr for fast switching; Logic level compatibility; Tiny PQFN 2x2mm package | Benefits: Smallest package footprint; Higher power density designs; Higher switching frequency; Reduced parts count wherever 5V supplies are available; Driven directly from microcontrollers (slow switching); System cost reduction | Target Applications: Wireless charging; Telecom; Adapter
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
型號 製造商 描述 庫存 價格
IRL100HS121
DISTI # V72:2272_18787593
Infineon Technologies AGDIFFERENTIATED MOSFETS3159
  • 3000:$0.3402
  • 1000:$0.3780
  • 500:$0.4825
  • 250:$0.5154
  • 100:$0.5726
  • 25:$0.6707
  • 10:$0.8198
  • 1:$0.9412
IRL100HS121
DISTI # V36:1790_18787593
Infineon Technologies AGDIFFERENTIATED MOSFETS0
  • 4000000:$0.3125
  • 2000000:$0.3128
  • 400000:$0.3392
  • 40000:$0.3865
  • 4000:$0.3944
IRL100HS121
DISTI # IRL100HS121CT-ND
Infineon Technologies AGMOSFET N-CH 100V 6PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6775In Stock
  • 1000:$0.4353
  • 500:$0.5513
  • 100:$0.6674
  • 10:$0.8560
  • 1:$0.9600
IRL100HS121
DISTI # IRL100HS121DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 6PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6775In Stock
  • 1000:$0.4353
  • 500:$0.5513
  • 100:$0.6674
  • 10:$0.8560
  • 1:$0.9600
IRL100HS121
DISTI # IRL100HS121TR-ND
Infineon Technologies AGMOSFET N-CH 100V 6PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 28000:$0.3568
  • 12000:$0.3606
  • 8000:$0.3747
  • 4000:$0.3944
IRL100HS121
DISTI # 33368673
Infineon Technologies AGDIFFERENTIATED MOSFETS4000
  • 4000:$0.3293
IRL100HS121
DISTI # 26196817
Infineon Technologies AGDIFFERENTIATED MOSFETS3159
  • 19:$0.9412
IRL100HS121
DISTI # IRL100HS121
Infineon Technologies AGTrans MOSFET N-CH 100V 11A 6-Pin PQFN T/R - Tape and Reel (Alt: IRL100HS121)
RoHS: Compliant
Min Qty: 4000
Container: Reel
Americas - 4000
  • 40000:$0.3399
  • 24000:$0.3469
  • 16000:$0.3589
  • 8000:$0.3719
  • 4000:$0.3859
IRL100HS121
DISTI # SP001592836
Infineon Technologies AGTrans MOSFET N-CH 100V 11A 6-Pin PQFN T/R (Alt: SP001592836)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel
Europe - 0
  • 40000:€0.3529
  • 24000:€0.3719
  • 16000:€0.4329
  • 8000:€0.5089
  • 4000:€0.5909
IRL100HS121
DISTI # 93AC7146
Infineon Technologies AGMOSFET, N-CH, 100V, 11A, 11.5W, PQFN,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power RoHS Compliant: Yes0
  • 1000:$0.4070
  • 500:$0.5150
  • 250:$0.5490
  • 100:$0.5830
  • 50:$0.6420
  • 25:$0.7010
  • 10:$0.7600
  • 1:$0.8890
IRL100HS121
DISTI # 726-IRL100HS121
Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant
8572
  • 1:$0.8800
  • 10:$0.7520
  • 100:$0.5770
  • 500:$0.5100
  • 1000:$0.4030
IRL100HS121
DISTI # TMOS1892
Infineon Technologies AGN-CH 100V 11A 42mOhm PQFN2X2
RoHS: Compliant
Stock DE - 90Stock HK - 0Stock US - 0
  • 1:$0.4947
  • 3:$0.4665
  • 9:$0.4382
  • 25:$0.3958
  • 74:$0.3817
IRL100HS121
DISTI # 2986493
Infineon Technologies AGMOSFET, N-CH, 100V, 11A, 11.5W, PQFN3985
  • 500:£0.3700
  • 250:£0.3940
  • 100:£0.4180
  • 10:£0.5960
  • 1:£0.7300
IRL100HS121
DISTI # 2986493
Infineon Technologies AGMOSFET, N-CH, 100V, 11A, 11.5W, PQFN
RoHS: Compliant
0
  • 1000:$0.5260
  • 500:$0.6190
  • 250:$0.6730
  • 100:$0.7270
  • 25:$1.0500
  • 5:$1.1500
圖片 型號 描述
ADM3057EBRWZ

Mfr.#: ADM3057EBRWZ

OMO.#: OMO-ADM3057EBRWZ

CAN Interface IC 2.5kV isoPower CAN-FD Transceiver
ADUM1401BRWZ-RL

Mfr.#: ADUM1401BRWZ-RL

OMO.#: OMO-ADUM1401BRWZ-RL

Digital Isolators Digital Quad-CH
PGA411QPAPRQ1

Mfr.#: PGA411QPAPRQ1

OMO.#: OMO-PGA411QPAPRQ1

Sensor Interface PGA411-Q1 Evaluation Module
PSMN063-150D,118

Mfr.#: PSMN063-150D,118

OMO.#: OMO-PSMN063-150D-118

MOSFET TAPE13 PWR-MOS
TMS320F28069PZPQ

Mfr.#: TMS320F28069PZPQ

OMO.#: OMO-TMS320F28069PZPQ

32-bit Microcontrollers - MCU PICCOLO MCU
C3M0075120K

Mfr.#: C3M0075120K

OMO.#: OMO-C3M0075120K

MOSFET SIC MOSFET 1200V 75 mOhm
TMS320F28069PZPQ

Mfr.#: TMS320F28069PZPQ

OMO.#: OMO-TMS320F28069PZPQ-TEXAS-INSTRUMENTS

Microcontrollers - MCU 32-bit Microcontrollers - MCU PICCOLO MCU
ADUM1401BRWZ-RL

Mfr.#: ADUM1401BRWZ-RL

OMO.#: OMO-ADUM1401BRWZ-RL-ANALOG-DEVICES-INC-ADI

Digital Isolators Digital Quad-CH
C3M0075120K

Mfr.#: C3M0075120K

OMO.#: OMO-C3M0075120K-WOLFSPEED

MOSFET N-CH 1200V 30A TO247-4
PSMN063-150D,118

Mfr.#: PSMN063-150D,118

OMO.#: OMO-PSMN063-150D-118-NEXPERIA

MOSFET N-CH 150V 29A DPAK
可用性
庫存:
Available
訂購:
1991
輸入數量:
IRL100HS121的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$0.88
US$0.88
10
US$0.75
US$7.52
100
US$0.58
US$57.70
500
US$0.51
US$255.00
1000
US$0.40
US$403.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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