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STW25NM60ND

STW25NM60ND
Mfr. #:
STW25NM60ND
製造商:
STMicroelectronics
描述:
MOSFET N-channel 600V, 21A FDMesh II
生命週期:
製造商新產品
數據表:
STW25NM60ND 數據表
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STW25NM60ND 更多信息 STW25NM60ND Product Details
產品屬性
屬性值
製造商：
意法半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-247-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
21 A
Rds On - 漏源電阻：
160 mOhms
Vgs - 柵源電壓：
25 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
160 W
配置：
單身的
頻道模式：
增強
打包：
管子
高度：
20.15 mm
長度：
15.75 mm
系列：
STB25NM60N
晶體管類型：
1 N-Channel
寬度：
5.15 mm
品牌：
意法半導體
秋季時間：
40 ns
產品類別：
MOSFET
上升時間：
30 ns
出廠包裝數量：
600
子類別：
MOSFET
典型關斷延遲時間：
50 ns
典型的開啟延遲時間：
60 ns
單位重量：
1.340411 oz
Tags
STW25NM60ND, STW25NM60N, STW25NM60, STW25NM6, STW25NM, STW25N, STW25, STW2, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Power Mosfet, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant: Yes
***icroelectronics
N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
***ure Electronics
Single N-Channel 600 V 0.16 Ohm 29 nC 160 W Silicon Flange Mount Mosfet TO-247-3
***r Electronics
Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N CH, 600V, 21A, TO 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***icroelectronics
N-channel 500 V, 0.090 Ohm, 27 A MDmesh" II Power MOSFET
***r Electronics
Power Field-Effect Transistor, 27A I(D), 500V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N CH, 500V, 27A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 190W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 27A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 500V; Voltage Vgs Max: 25V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-247 package
*** Source Electronics
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 600V 20A TO-247
***ure Electronics
Single N-Channel 600 V 140 W 60 nC MDmesh Through Hole Mosfet - TO-247-3
***ark
Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:140W; No. of Pins:3Pins RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***icroelectronics
N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-247 package
***ark
Mosfet, N-Ch, 600V, 24A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.11Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 24A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 22 A, 165 mΩ, TO-247
*** Source Electronics
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 600V 22A TO-247
***r Electronics
Power Field-Effect Transistor, 22A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET,N CH,600V,22A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:205W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 23 A, 165 mΩ, TO-247
***ark
SuperFET2 600V 165mohm slow version - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
***r Electronics
Power Field-Effect Transistor, 23A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N-CH, 600V, 23A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.132ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, pleaseconsider the SuperFET II MOSFET series.
型號 製造商 描述 庫存 價格
STW25NM60ND
DISTI # 497-8455-5-ND		STMicroelectronicsMOSFET N-CH 600V 21A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		562In Stock
  • 510:$5.9078
  • 120:$7.0512
  • 30:$7.8137
  • 1:$9.5300
STW25NM60ND
DISTI # 511-STW25NM60ND		STMicroelectronicsMOSFET N-channel 600V, 21A FDMesh II
RoHS: Compliant		4
  • 1:$8.2500
  • 10:$7.4600
  • 25:$7.1100
  • 100:$6.1700
  • 250:$5.9000
  • 500:$5.3800
STW25NM60ND
DISTI # STW25NM60ND		STMicroelectronicsN-Ch 600V 21A 160W 0,16R TO247
RoHS: Compliant		0
  • 5:€2.6000
  • 30:€2.2000
  • 120:€2.0000
  • 300:€1.9200
STW25NM60ND
DISTI # 2098388		STMicroelectronicsMOSFET, N CH, 600V, 21A, TO 247
RoHS: Compliant		1
  • 1:£6.6300
  • 10:£5.0200
  • 100:£4.6300
  • 250:£4.4600
  • 500:£4.0300
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可用性
庫存:
Available
訂購:
5000
輸入數量:
STW25NM60ND的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$8.24
US$8.24
10
US$7.45
US$74.50
25
US$7.10
US$177.50
100
US$6.16
US$616.00
250
US$5.89
US$1 472.50
500
US$5.37
US$2 685.00
1000
US$4.67
US$4 670.00
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