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型號 | 製造商 | 描述 | 庫存 | 價格 |
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FZ1200R12KE3NOSA1 DISTI # FZ1200R12KE3NOSA1 | Infineon Technologies AG | - Bulk (Alt: FZ1200R12KE3NOSA1) RoHS: Not Compliant Min Qty: 1 Container: Bulk | Americas - 0 |
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FZ1200R12KE3NOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor Module RoHS: Not Compliant | 58 |
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圖片 | 型號 | 描述 |
---|---|---|
Mfr.#: FZ1200R33HE3 OMO.#: OMO-FZ1200R33HE3 |
IGBT Modules IGBT Module 1200A 3300V | |
Mfr.#: FZ1200R12HP4HOSA2 |
MODULE IGBT IHMB130-2 | |
Mfr.#: FZ1200R17KE3_B2 OMO.#: OMO-FZ1200R17KE3-B2-125 |
IGBT Modules N-CH 1.7KV 1.9KA | |
Mfr.#: FZ1200R12KF OMO.#: OMO-FZ1200R12KF-1190 |
全新原裝 | |
Mfr.#: FZ1200R12KL4CNOSA1 |
IGBT MODULE 1200V 1200A | |
Mfr.#: FZ1200R16KF4-S1 OMO.#: OMO-FZ1200R16KF4-S1-1190 |
全新原裝 | |
Mfr.#: FZ1200R17KE3-S1 OMO.#: OMO-FZ1200R17KE3-S1-1190 |
全新原裝 | |
Mfr.#: FZ1200R17KF6CB2V OMO.#: OMO-FZ1200R17KF6CB2V-1190 |
全新原裝 | |
Mfr.#: FZ1200R33KF2C-S1 OMO.#: OMO-FZ1200R33KF2C-S1-1190 |
全新原裝 | |
Mfr.#: FZ1200R12KE3NOSA1 OMO.#: OMO-FZ1200R12KE3NOSA1-1190 |
Insulated Gate Bipolar Transistor, 1700A I(C), 1200V V(BR)CES, N-Channel |