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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| BSC200P03LSGAUMA1 DISTI # BSC200P03LSGAUMA1TR-ND | Infineon Technologies AG | MOSFET P-CH 30V 12.5A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSC200P03LSGAUMA1 DISTI # BSC200P03LSGAUMA1CT-ND | Infineon Technologies AG | MOSFET P-CH 30V 12.5A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC200P03LSGAUMA1 DISTI # BSC200P03LSGAUMA1DKR-ND | Infineon Technologies AG | MOSFET P-CH 30V 12.5A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC200P03LS G DISTI # 726-BSC200P03LSG | Infineon Technologies AG | MOSFET P-Ch -30V -12.5A TDSON-8 OptiMOS P RoHS: Compliant | 0 | |
| BSC200P03LSG | Infineon Technologies AG | Power Field-Effect Transistor, 9.9A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 15677 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: BSC205N10LS G OMO.#: OMO-BSC205N10LS-G |
MOSFET N-Ch 100V 7.4A TDSON-8 |
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Mfr.#: BSC200N15NS3G OMO.#: OMO-BSC200N15NS3G-1190 |
全新原裝 |
|
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Mfr.#: BSC200P03LS OMO.#: OMO-BSC200P03LS-1190 |
全新原裝 |
|
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Mfr.#: BSC200P03LS G OMO.#: OMO-BSC200P03LS-G-1190 |
MOSFET P-Ch -30V -12.5A TDSON-8 OptiMOS P |
|
|
Mfr.#: BSC200P03LSG OMO.#: OMO-BSC200P03LSG-1190 |
Power Field-Effect Transistor, 9.9A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC200P03LSGAUMA1 |
MOSFET P-CH 30V 12.5A TDSON-8 |
|
|
Mfr.#: BSC205N10LS OMO.#: OMO-BSC205N10LS-1190 |
全新原裝 |
|
|
Mfr.#: BSC205N10LSGATMA1 OMO.#: OMO-BSC205N10LSGATMA1-1190 |
Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC20N025S OMO.#: OMO-BSC20N025S-1190 |
全新原裝 |
|
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Mfr.#: BSC205N10LS G |
IGBT Transistors MOSFET N-Ch 100V 7.4A TDSON-8 |