SI7374DP-T1-E3

SI7374DP-T1-E3
Mfr. #:
SI7374DP-T1-E3
製造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 30V 24A 56W 5.5mohm @ 10V
生命週期:
製造商新產品
數據表:
SI7374DP-T1-E3 數據表
交貨:
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支付:
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ECAD Model:
產品屬性
屬性值
製造商
威世
產品分類
FET - 單
打包
捲軸
部分別名
SI7374DP-E3
單位重量
0.017870 oz
安裝方式
貼片/貼片
包裝盒
SO-8
技術
通道數
1 Channel
配置
單用肖特基二極管
晶體管型
1 N-Channel
鈀功耗
5 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
10 ns
上升時間
160 ns 15 ns
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
23.8 A
Vds-漏-源-擊穿電壓
30 V
Rds-On-Drain-Source-Resistance
5.5 mOhms
晶體管極性
N通道
典型關斷延遲時間
30 ns 42 ns
典型開啟延遲時間
40 ns 15 ns
通道模式
增強
Tags
SI737, SI73, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 23.8A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 30V 24A PPAK SO-8
***
N-CH 30-V (D-S) W/SCHOTTKY
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:24000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0066ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.8V; Power Dissipation, Pd:5W ;RoHS Compliant: Yes
型號 製造商 描述 庫存 價格
SI7374DP-T1-E3
DISTI # SI7374DP-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 30V 24A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$1.6678
SI7374DP-T1-E3
DISTI # SI7374DP-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 23.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7374DP-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$1.5900
  • 6000:$1.5900
  • 12000:$1.4900
  • 18000:$1.4900
  • 30000:$1.3900
SI7374DP-T1-E3
DISTI # 781-SI7374DP-T1-E3
Vishay IntertechnologiesMOSFET 30V 24A 56W 5.5mohm @ 10V
RoHS: Compliant
0
  • 1:$3.2000
  • 10:$2.6500
  • 100:$2.1800
  • 250:$2.1100
  • 500:$1.9200
  • 1000:$1.9100
  • 3000:$1.9000
SI7374DP-T1-E3Vishay IntertechnologiesMOSFET 30V 24A 56W 5.5mohm @ 10VAmericas -
    圖片 型號 描述
    SI7374DP-T1-E3

    Mfr.#: SI7374DP-T1-E3

    OMO.#: OMO-SI7374DP-T1-E3

    MOSFET 30V 24A 56W 5.5mohm @ 10V
    SI7374DP-T1-GE3

    Mfr.#: SI7374DP-T1-GE3

    OMO.#: OMO-SI7374DP-T1-GE3

    MOSFET 30V 24A 56W 5.5mohm @ 10V
    SI7374DP-T1-E3

    Mfr.#: SI7374DP-T1-E3

    OMO.#: OMO-SI7374DP-T1-E3-VISHAY

    RF Bipolar Transistors MOSFET 30V 24A 56W 5.5mohm @ 10V
    SI7374DP-T1-GE3

    Mfr.#: SI7374DP-T1-GE3

    OMO.#: OMO-SI7374DP-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 30V 24A 56W 5.5mohm @ 10V
    可用性
    庫存:
    Available
    訂購:
    5500
    輸入數量:
    SI7374DP-T1-E3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$2.08
    US$2.08
    10
    US$1.98
    US$19.81
    100
    US$1.88
    US$187.65
    500
    US$1.77
    US$886.15
    1000
    US$1.67
    US$1 668.00
    由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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