2SJ462-T1-AZ

Mfr. #:: 2SJ462-T1-AZ
製造商:: Rochester Electronics, LLC
描述:: Trans MOSFET P-CH 12V 2.5A 3-Pin(2+Tab) SC-84 T/R
生命週期:: 製造商新產品
數據表:: 2SJ462-T1-AZ 數據表
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Tags: 2SJ462-T1, 2SJ462-T, 2SJ462, 2SJ46, 2SJ4, 2SJ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SJ462-T1-AZ 描述

***p One Stop: Trans MOSFET P-CH 12V 2.5A 3-Pin(2+Tab) SC-84 T/R

***i-Key: P-CHANNEL POWER MOSFET

***egrated Device Technology: Power MOSFETs for Automotive

***(Formerly Allied Electronics): IRFL014TRPBF N-channel MOSFET Transistor; 2.7 A; 60 V; 3 + Tab-Pin SOT-223

***ure Electronics: Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3

***ical: Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***ure Electronics: Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3

***ical: Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R

***nsix Microsemi: Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***et Japan: Transistor MOSFET Array Dual P-CH 30V 2.9A 8-Pin SOIC T/R

***emi: Dual P-Channel PowerTrench® MOSFET, 30V, -2.9A, 130mΩ

***ure Electronics: Dual 30 V P-Channel 130 mOhm Surface Mount PowerTrench Mosfet- SOIC-8

***rchild Semiconductor: This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.9mA; On Resistance, Rds(on):0.13ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes

***p One Stop Global: Trans MOSFET N/P-CH 30V 3.7A/2.9A 8-Pin SOIC N T/R

***emi: Dual N & P-Channel Enhancement Mode Field Effect Transistor 30V

***r Electronics: Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.7A; On Resistance, Rds(on):80mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***nell: MOSFET N & P CH 30V 3.7/-2.9A 8SOIC; Transistor Type:MOSFET; Transistor Polarity:N/P ; Voltage, Vds Typ:30V; Current, Id Cont:3.7A; On State Resistance:80mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

***(Formerly Allied Electronics): MOSFET; N-Ch; Vds 60V; Vgs +/- 20V; Rds(on) 82mohm; Id 3.2A; TSOP-6; Pd 2W

***ure Electronics: N-Channel 60 V 0.01 Ohm 3.3 W Surface Mount Power Mosfet - TSOP-6

*** Source Electronics: Trans MOSFET N-CH 60V 3.2A 6-Pin TSOP T/R / MOSFET N-CH 60V 4.1A 6-TSOP

***ure Electronics: Dual N-Channel 60 V 2.6 A 0.15 O 14 nC SipMOS Small Signal Transistor - SOIC-8

***et Japan: SIPMOS Small-Signal-Transistor Enhancement Dual N 60V 2.6A 8-Pin SO Surface Mount

***ark: Mosfet Dual,l N Channel 60V, 2.6A, 8Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.12Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.6V Rohs Compliant: Yes

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

Market price

型號	製造商	描述	庫存	價格
2SJ462-T1-AZ DISTI # C1S620200384940	Renesas Electronics Corporation	Trans MOSFET P-CH 12V 2.5A 3-Pin(2+Tab) SC-84 T/R RoHS: Compliant	2300	500:$3.5700 200:$3.6600 100:$3.9100 50:$4.3800
2SJ462-T1-AZ DISTI # 2SJ462-T1-AZ	Renesas Electronics Corporation	- Bulk (Alt: 2SJ462-T1-AZ) Min Qty: 385 Container: Bulk	Americas - 0
2SJ462-T1-AZ	Renesas Electronics Corporation	Power Field-Effect Transistor RoHS: Compliant	50800	1000:$0.8600 500:$0.9000 100:$0.9400 25:$0.9800 1:$1.0500

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